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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSD0865A DIODE SIL CARBIDE 650V 15A DPAK onsemi	2,500	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
NXPSC06650D6J DIODE SIL CARBIDE 650V 6A DPAK WeEn Semiconductors	5,450	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
WND60P16WQ DIODE GEN PURP 1.6KV 60A TO247-2 WeEn Semiconductors	463	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	60A	1.12 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1600 V	-	-	-	Through Hole	TO-247-2	-55°C ~ 150°C
PCDB0865G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,390	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
PCDD0865G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,977	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
RURU8070 DIODE AVALANCHE 700V 80A TO218 Harris Corporation	1,097	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	700 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 700 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RURU8080 DIODE AVALANCHE 800V 80A TO218 Harris Corporation	274	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	800 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 800 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
PCDP0865G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,995	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
BYC75W-600PQ DIODE GEN PURP 600V 75A TO247-2 WeEn Semiconductors	851	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	75A	2.75 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
AS3D020065A 650V,20A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED	137	RFQ	Datasheet	-	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	650 V	56A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	1190pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
1N486B DIODE GEN PURP 250V 200MA DO35 onsemi	14,945	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	250 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	50 nA @ 225 V	-	-	-	Through Hole	DO-204AH (DO-35)	175°C
SIC1060P-BP DIODE SIL CARB 650V 10A TO220AC Micro Commercial Co	4,898	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	36pF @ 400V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC10H065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,108	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
ADC6D10065E DIODE SIL SIC 650V 35A TO252-2 Analog Power Inc.	1,500	RFQ	Datasheet	WBG	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 650 V	6.3pF @ 0V, 100kHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
PX8244HDMG008XTMA1 LED PX8244HDMG008XTMA1 Infineon Technologies	8,000	RFQ	Datasheet	-	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
WNSC2D101200WQ DIODE SIL CARB 1.2KV 10A TO247-2 WeEn Semiconductors	2,317	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.65 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	110 µA @ 1200 V	490pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
CDBDSC8650-G DIODE SIL CARB 650V 25.5A DPAK Comchip Technology	342	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	25.5A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	550pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
PCDP1665G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	618pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
STPSC10C065RY DIODE SIL CARBIDE 650V 10A I2PAK STMicroelectronics	972	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	I2PAK	-40°C ~ 175°C
JPAD10 TO-92 2L DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	2,597	RFQ	Datasheet	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Active	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	10 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C

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