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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
TRS8V65H,LQ G3 SIC-SBD 650V 8A DFN8X8 Toshiba Semiconductor and Storage	2,000	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
RHRU50120 DIODE AVALANCHE 1.2KV 50A TO218 Harris Corporation	425	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	1200 V	50A	3.2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1200 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RHRU501200 RECTIFIER DIODE, AVALANCHE Harris Corporation	120	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
WNSC2D10650DJ DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	7,097	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C
S3D10065L DIODE SIL CARBIDE 650V 31A 5DFN SMC Diode Solutions	497	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	31A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	787pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
S3D12065G DIODE SIL CARBIDE 650V 35A D2PAK SMC Diode Solutions	641	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	16 µA @ 650 V	764pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
RHRG3040 DIODE AVALANCHE 400V 30A TO247-2 Harris Corporation	4,298	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	400 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	250 µA @ 400 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RHRG7570 DIODE AVALANCHE 700V 75A TO247 Harris Corporation	1,650	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	700 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 700 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
RHRG75100 DIODE AVALANCHE 1KV 75A TO247 Harris Corporation	750	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	1000 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
WNSC6D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	935	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT60DQ60SG DIODE GEN PURP 60A D3PAK Microchip Technology	122	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	-	60A	2.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	25 µA @ 600 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
RURG3080 DIODE AVALANCHE 800V 30A TO247 Harris Corporation	1,672	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	800 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 µA @ 800 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
1N4246 DIODE GEN PURP 400V 1A AXIAL Harris Corporation	6,102	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 400 V	-	-	-	Through Hole	Axial	-65°C ~ 175°C
SICR10650 DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions	168	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	695pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSDB3060S1_T0_00001 TO-263, FRED Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	-	-	Surface Mount	TO-263	-55°C ~ 150°C
PSDB3060L1_T0_00001 TO-263, FRED Panjit International Inc.	1,658	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-	-	-	Surface Mount	TO-263	-55°C ~ 150°C
WNSC2D10650BJ DIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors	8,768	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C
PSDH30120L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,460	RFQ	Datasheet	-	TO-247-2	Tube	Not For New Designs	Standard	1200 V	30A	2.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
PSDH30120S1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,388	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
S4D10120G0 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.8 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C

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