Toshiba Semiconductor and Storage TRS8V65H,LQ

Overview

TRS8V65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 8 A silicon carbide Schottky barrier diode in DFN8x8 package, featuring VF = 1.2 V (typ.) at 4 A, Qc = 22 nC (typ.) at 400 V, and IR = 1.5 µA (typ.) at 650 V, designed for high-efficiency PFC stages in industrial power supplies.

For engineers reviewing the TRS8V65H datasheet, TRS8V65H pinout, TRS8V65H application, or TRS8V65H equivalent, key selection criteria include junction-to-case thermal resistance (2.20 °C/W), repetitive peak reverse voltage rating (650 V), and low capacitive charge for reduced switching losses in hard-switched topologies.

Technical Context

This SiC SBD employs third-generation chip design to minimize conduction and switching losses simultaneously. Its low forward voltage and ultra-low reverse recovery charge enable operation at higher frequencies without significant thermal penalty.

The device uses a heatsink-integrated cathode (Pin 5) and non-connected terminals (Pins 1–2) to support high-current, low-inductance PCB layouts. Thermal performance is specified with Rth(j-c) = 2.20 °C/W at Tc = 25 °C, enabling direct thermal coupling to copper planes or heatsinks.

Key Specifications

Pinout & Package

Package: DFN8x8 (Toshiba designation: 2-8T1A), surface-mount, thermally enhanced with exposed cathode pad (Pin 5) for heatsinking. Weight: 0.175 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC8H065D and IXYS DSSK60-06AS, the TRS8V65H offers superior power density and lower switching loss due to its DFN8x8 package and optimized third-generation SiC die, making it ideal for space-constrained, high-frequency PFC and inverter designs where thermal coupling to PCB is prioritized.

Availability

TRS8V65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply and consistent parametric performance across production batches.

Supply support for TRS8V65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in SiC and IGBT technologies.

The TRS8V65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature rating for the TRS8V65H?

The TRS8V65H has a maximum junction temperature (Tj) rating of 175 °C, as specified in its Absolute Maximum Ratings table. This allows operation in high-ambient environments such as enclosed power supplies or outdoor solar inverters, provided thermal design maintains Tj ≤ 175 °C under worst-case load and ambient conditions. The TRS8V65H datasheet defines derating curves for power dissipation versus case temperature.

Does the TRS8V65H have a built-in thermal pad, and how should it be mounted?

Yes, the TRS8V65H features an exposed cathode pad (Pin 5) that serves as both electrical cathode and thermal interface. It must be soldered directly to a large copper pour or thermal pad on the PCB, with recommended stencil aperture and solder paste volume per Toshiba's mounting guidelines. Pins 1 and 2 are NC and must remain unconnected to avoid compromising thermal or electrical performance of the TRS8V65H.

How does the TRS8V65H's Qc compare to silicon diodes in the same voltage class?

The TRS8V65H exhibits Qc = 22 nC (typ.) at 400 V, which is approximately 85–90% lower than fast recovery silicon diodes rated for 600 V. This reduction directly lowers turn-off switching loss and EMI in hard-switched converters. Unlike silicon diodes, the TRS8V65H has no reverse recovery tail, eliminating associated voltage spikes and gate drive stress in adjacent MOSFETs or IGBTs.

Is the TRS8V65H RoHS compliant and halogen-free?

Yes, the TRS8V65H complies with the EU RoHS Directive and is halogen-free, as confirmed in Toshiba's official product documentation and environmental compliance statements. Material declarations and test reports are available upon request through Aetrix Electronics' technical support team for the TRS8V65H.

Can the TRS8V65H replace a standard 650 V silicon diode without circuit redesign?

While the TRS8V65H shares the same VRRM rating, its zero reverse recovery and lower VF require review of gate drive strength, snubber sizing, and thermal layout. Direct replacement may cause overvoltage transients in circuits relying on silicon diode recovery for soft switching. Optimal integration of the TRS8V65H typically involves adjusting gate resistors and verifying voltage overshoot with oscilloscope measurements during TRS8V65H evaluation.