Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
BYV60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	468	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	79 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
SCS304APC9 DIODE SILICON CARBIDE 650V 4A Rohm Semiconductor	862	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	-	175°C (Max)
RFUS20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	259	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	-	-	Surface Mount	LPDS	150°C (Max)
RBQ30NS45BTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	706	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	30A	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	-	-	Surface Mount	LPDS	150°C
WNSC2D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	995	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
MUR3040 DIODE GEN PURP 400V 15A TO218 onsemi	7,505	RFQ	Datasheet	-	TO-218-2	Bulk	Active	Standard	400 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	35 µA @ 400 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-218	-65°C ~ 175°C
SDT05S60 DIODE SIL CARB 600V 5A TO220-2 Infineon Technologies	2,481	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	170pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
RHRU5060 DIODE AVALANCHE 600V 50A TO218 Harris Corporation	734	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 µA @ 600 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
WNSC6D166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	2,976	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
RURG8080 DIODE AVALANCHE 800V 80A TO247-2 Harris Corporation	703	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	800 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 800 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RURG8070 DIODE AVALANCHE 700V 80A TO247-2 Harris Corporation	450	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	700 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 700 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
BYC30W-600PT2Q DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	1,787	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	34 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
PSDH60120L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,500	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	330 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
S3D08065L DIODE SIL CARBIDE 650V 24A 5DFN SMC Diode Solutions	1,200	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
BYC30W-1200PQ DIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors	386	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
WNSC2D10650TJ DIODE SIL CARBIDE 650V 10A 5DFN WeEn Semiconductors	890	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
WNSC2D10650WQ DIODE SIL CARB 650V 10A TO247-2 WeEn Semiconductors	517	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	175°C
STTH806D DIODE GEN PURP 600V 8A TO220AC STMicroelectronics	3,924	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	600 V	8A	1.85 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	8 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
IDK12G65C5XTMA1 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	9,817	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	2.1 mA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
VS-10ETF10-M3 DIODE GEN PURP 1KV 10A TO220AC Vishay General Semiconductor - Diodes Division	4,509	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	10A	1.33 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	310 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C

Total 95236 Record«Prev 1... 705 706 707 708709710 711 712...4762 Next»

PRODUCT

PHONE

USER