Infineon Technologies IDK12G65C5XTMA1

Overview

IDK12G65C5XTMA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 1.5–2.2 V forward voltage at 12 A (25–150°C), 18 nC capacitive charge at 400 V, and 4.3 µJ stored energy-optimized for high-frequency PFC and solar inverters operating up to 175°C junction temperature.

For engineers reviewing the IDK12G65C5XTMA1 datasheet, IDK12G65C5XTMA1 pinout, IDK12G65C5XTMA1 application, or IDK12G65C5XTMA1 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal resistance of 0.9–1.5 K/W (junction-to-case), surge current rating of 97 A (10 ms, 25°C), and RoHS-compliant Pb-free plating per JEDEC qualification.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer technology to achieve lower figure-of-merit (Qc × Vf) and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or temperature-dependent switching transitions.

The device is rated for repetitive peak reverse voltage of 650 V and supports dv/dt ruggedness up to 100 V/ns under 0–480 V reverse bias. It delivers stable forward voltage (1.5–2.2 V) across –55°C to 150°C at 12 A, with reverse leakage tightly bounded (≤1350 µA at 650 V/150°C).

Key Specifications

Pinout & Package

Package: PG-TO263-2 (SMD variant of TO-263), thermally enhanced surface-mount outline with isolated cathode pad and single anode terminal. Cathode connection occupies majority of bottom copper area for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and SS12065, IDK12G65C5XTMA1 delivers superior power density via its PG-TO263-2 footprint, lowest Qc × Vf FoM, and JEDEC-validated avalanche robustness-making it optimal for new SMD-based 6–12 kW industrial power designs.

Availability

IDK12G65C5XTMA1 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for IDK12G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and wide-bandgap devices, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

IDK12G65C5XTMA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDK12G65C5XTMA1 supports continuous operation up to 175°C junction temperature, verified per JEDEC JESD22-A103 and confirmed in thermal characterization data. Derating begins above 140°C case temperature, where IF must be reduced linearly to maintain Tj ≤ 175°C under specified PCB cooling conditions.

Does this diode require a gate driver or external control signal?

No-IDK12G65C5XTMA1 is a passive uncontrolled diode with no gate terminal or control interface. It conducts automatically when anode voltage exceeds cathode voltage by ≥1.5 V, and blocks current in reverse bias up to 650 V. No driver, biasing, or timing circuitry is needed.

Can IDK12G65C5XTMA1 replace a silicon fast recovery diode in an existing design?

Yes, but layout and thermal validation are required: the PG-TO263-2 footprint differs from TO-220 or D2PAK, and its lower VF reduces conduction loss but increases peak forward current during soft-start. Ensure PCB copper area meets 6 cm² minimum for cathode cooling and verify dv/dt stress on adjacent MOSFETs.

Is avalanche rating specified for this part?

Yes-every unit undergoes 10 ms avalanche stress test at rated current per final data sheet Rev. 2.1. The device is characterized for non-repetitive avalanche energy absorption up to ∫i²dt = 47 A²s (25°C), enabling reliable operation during transient overvoltage events without parameter shift or failure.