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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Vishay General Semiconductor - Diodes Division VS-10ETF10-M3

Name: VS-10ETF10-M3
Brand: Vishay General Semiconductor - Diodes Division
SKU: VS-10ETF10-M3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: VS-10ETF10-M3

Manufacturer:: Vishay General Semiconductor - Diodes Division

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: VS-10ETF10-M3.pdf

Description:: DIODE GEN PURP 1KV 10A TO220AC

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Product details

Overview

VS-10ETF10-M3 from Vishay Semiconductors is a fast soft recovery rectifier diode in TO-220AC 2L package, rated for 10 A average forward current, 1000 V peak reverse voltage, and 80 ns reverse recovery time at 1 A/100 A/μs test condition. It delivers low 1.33 V forward voltage drop at 10 A and 25 °C, operates up to 150 °C junction temperature, and is optimized for EMI-sensitive output rectification in DC-DC converters.

For engineers reviewing the VS-10ETF10-M3 datasheet, VS-10ETF10-M3 pinout, VS-10ETF10-M3 application, or VS-10ETF10-M3 equivalent, key selection criteria include soft recovery behavior (snap factor = 0.6), thermal resistance (R_thJC = 1.5 °C/W), I²t fusing rating (66 A²s), and JEDEC-qualified reliability per JESD47.

Technical Context

This single-diode rectifier employs glass-passivated pellet chip construction for stable operation under severe thermal cycling. Its soft recovery profile minimizes voltage overshoot and EMI generation during commutation in high-frequency switching topologies like phase-shifted full-bridge and LLC resonant converters.

The device features a threshold voltage of 0.96 V and forward slope resistance of 22.9 mΩ at 150 °C, enabling predictable conduction loss modeling across temperature. Reverse leakage remains ≤4 mA at 150 °C and rated V_RRM, supporting reliable blocking in high-temperature industrial power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	1000 V - maximum non-repetitive reverse blocking capability without breakdown
I_F(AV)	10 A - continuous sinusoidal forward current at T_C = 125 °C, 180° conduction
V_F @ 10 A	1.33 V - forward voltage drop defining conduction loss at rated DC load
t_rr	80 ns - reverse recovery time under 1 A/100 A/μs conditions, indicating softness and EMI performance
R_thJC	1.5 °C/W - junction-to-case thermal resistance enabling heatsink sizing for thermal management
I_FSM	140 A - peak non-repetitive surge current with no voltage reapplied, critical for inrush handling
Snap factor	0.6 - ratio of peak reverse recovery current to diode forward current, confirming soft recovery behavior

Pinout & Package

VS-10ETF10-M3 is housed in a TO-220AC 2L package with isolated tab (cathode-connected base), compliant with JEDEC outline. The case serves as the cathode terminal and provides mechanical mounting and thermal path to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Anode (Lead 1)	Forward current entry point	Connected to positive side of AC input or switch node; requires PCB trace capable of 10 A continuous
Cathode (Lead 2)	Forward current exit / reverse blocking terminal	Electrically tied to metal tab; must be insulated from heatsink unless system ground reference permits
Tab (Base)	Cathode connection and thermal interface	Provides primary heat dissipation path; mounting torque 6–12 kgf·cm ensures optimal R_thCS = 0.5 °C/W

Key Features

Feature	Design Value
Glass passivated chip junction	Ensures long-term stability under 150 °C operation and repeated thermal cycling in industrial environments
Soft recovery with snap factor 0.6	Reduces voltage spikes and conducted EMI during turn-off, easing filter design in EMC-critical applications
JEDEC JESD47 qualification	Validated reliability for automotive-grade stress testing including temperature cycling and humidity bias
R_thJC = 1.5 °C/W	Enables compact heatsink design for 10 A conduction losses while maintaining T_J ≤ 150 °C
Halogen-free, RoHS-compliant, Pb-free terminations	Meets global environmental compliance requirements for industrial and consumer power systems

Applications

Industrial Motor Drives	Telecom DC-DC Converters
Use Scenario: Output rectification in 3 kW three-phase inverter stages driving induction motors. IC Role / Device Role / Timing Role: Freewheeling diode clamping regenerative energy and providing low-loss DC bus return path. Use Value: Soft recovery limits dv/dt-induced gate ringing on IGBTs; 1000 V rating supports 600 V DC bus with safety margin.	Use Scenario: Secondary-side synchronous rectification replacement in 48 V to 12 V telecom brick converters. IC Role / Device Role / Timing Role: High-efficiency unidirectional power transfer with minimal reverse recovery loss. Use Value: 1.33 V V_F reduces conduction loss vs. Schottky alternatives; 80 ns t_rr enables >200 kHz operation without excessive EMI.
Solar Microinverters	EV On-Board Chargers
Use Scenario: DC link rectification in bidirectional AC/DC stages of residential solar microinverters. IC Role / Device Role / Timing Role: Input rectifier handling 10 A RMS grid-synchronized current with low EMI signature. Use Value: 4 mA I_RRM at 150 °C ensures stable blocking during high-ambient rooftop operation; TO-220AC allows direct heatsink mounting.	Use Scenario: Boost PFC stage output rectification in 6.6 kW OBC designs operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Fast, soft-recovery diode minimizing switching losses and voltage stress on MOSFETs. Use Value: Snap factor 0.6 suppresses oscillatory recovery current, reducing snubber component count and improving efficiency by ~0.4%.

Industrial Motor Drives

Telecom DC-DC Converters

Use Scenario: Output rectification in 3 kW three-phase inverter stages driving induction motors.

IC Role / Device Role / Timing Role: Freewheeling diode clamping regenerative energy and providing low-loss DC bus return path.

Use Value: Soft recovery limits dv/dt-induced gate ringing on IGBTs; 1000 V rating supports 600 V DC bus with safety margin.

Use Scenario: Secondary-side synchronous rectification replacement in 48 V to 12 V telecom brick converters.

IC Role / Device Role / Timing Role: High-efficiency unidirectional power transfer with minimal reverse recovery loss.

Use Value: 1.33 V V_F reduces conduction loss vs. Schottky alternatives; 80 ns t_rr enables >200 kHz operation without excessive EMI.

Solar Microinverters

EV On-Board Chargers

Use Scenario: DC link rectification in bidirectional AC/DC stages of residential solar microinverters.

IC Role / Device Role / Timing Role: Input rectifier handling 10 A RMS grid-synchronized current with low EMI signature.

Use Value: 4 mA I_RRM at 150 °C ensures stable blocking during high-ambient rooftop operation; TO-220AC allows direct heatsink mounting.

Use Scenario: Boost PFC stage output rectification in 6.6 kW OBC designs operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Fast, soft-recovery diode minimizing switching losses and voltage stress on MOSFETs.

Use Value: Snap factor 0.6 suppresses oscillatory recovery current, reducing snubber component count and improving efficiency by ~0.4%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast soft recovery rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay VS-10ETF12-M3	Higher V_RRM = 1200 V; identical I_F(AV), t_rr, and package	Required for 800 V DC bus systems or higher line-voltage inputs	Select when system peak reverse voltage exceeds 900 V; same thermal and layout footprint
ON Semiconductor MUR10100CT	TO-220AB dual common-cathode configuration; 1000 V V_RRM; t_rr = 75 ns; slightly higher V_F = 1.4 V	Designed for dual-phase rectification; not single-diode drop-in	Consider only if dual-diode topology is acceptable; requires PCB redesign due to 3-pin vs. 2-pin layout

Compared with VS-10ETF10-M3, the VS-10ETF12-M3 offers higher voltage headroom without thermal or footprint trade-offs, while the MUR10100CT introduces dual-diode functionality and minor timing differences-making it suitable only for revised board layouts where dual cathodes are leveraged.

Availability

VS-10ETF10-M3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and solar microinverters requiring stable component supply, halogen-free compliance, and JEDEC-qualified reliability.

Supply support for VS-10ETF10-M3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in power rectification and ruggedized packaging technologies.

The VS-10ETF1...-M3 series targets high-efficiency, EMI-sensitive power conversion systems where soft recovery, thermal robustness, and JEDEC reliability are mandatory-especially in industrial, renewable energy, and telecom infrastructure.

FAQ

What is the maximum junction temperature rating for VS-10ETF10-M3?

The VS-10ETF10-M3 has a maximum junction temperature (T_J) of +150 °C, validated per JEDEC JESD47 qualification. This rating enables operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive auxiliary systems, provided thermal design maintains T_J ≤ 150 °C using the specified R_thJC = 1.5 °C/W path.

Does VS-10ETF10-M3 have a built-in thermal pad, and how should it be mounted?

Yes, the VS-10ETF10-M3 TO-220AC 2L package includes an electrically isolated metal tab serving as both cathode terminal and thermal pad. Mounting requires thermal grease and torque between 6–12 kgf·cm (5–10 lbf·in) to achieve the specified R_thCS = 0.5 °C/W. Electrical isolation from the heatsink is mandatory unless system grounding scheme explicitly ties cathode to chassis ground.

How does the snap factor of 0.6 impact EMI performance in VS-10ETF10-M3?

The snap factor of 0.6 in VS-10ETF10-M3 quantifies its soft recovery behavior-defined as the ratio of peak reverse recovery current (I_rr) to forward current (I_F). A value below 1.0 indicates controlled, non-oscillatory turn-off, directly reducing high-frequency dv/dt noise and conducted EMI, thereby simplifying compliance with CISPR-22 Class B limits in power supply designs.

Is VS-10ETF10-M3 suitable for use in synchronous rectification topologies?

No, VS-10ETF10-M3 is a unidirectional, non-controlled rectifier diode-not a synchronous rectifier IC or MOSFET-based solution. It lacks gate drive interface or control logic. However, it serves as a robust freewheeling or output rectifier in topologies where synchronous rectification is impractical due to cost, complexity, or voltage constraints-such as high-V_RRM PFC boost outputs.

What is the reverse leakage current specification for VS-10ETF10-M3 at elevated temperature?

At T_J = 150 °C and rated V_RRM = 1000 V, the VS-10ETF10-M3 exhibits a maximum reverse leakage current (I_RRM) of 4 mA. This value is confirmed in the Absolute Maximum Ratings table and reflects stable blocking performance under worst-case thermal stress, critical for maintaining efficiency and reliability in high-temperature solar or industrial power systems.

VS-10ETF10-M3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay General Semiconductor - Diodes Division

Series:: -

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1000 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 1.33 V @ 10 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 310 ns

Current - Reverse Leakage @ Vr:: 100 µA @ 1000 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AC

Operating Temperature - Junction:: -40°C ~ 150°C

VS-10ETF10-M3 FAQ

1.How can I place an order for VS-10ETF10-M3 through Aetrix?

Please submit a Request for Quotation (RFQ) for VS-10ETF10-M3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VS-10ETF10-M3 reliable?

The price and inventory of VS-10ETF10-M3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-10ETF10-M3 is usually 5 days.

3.What payment methods are accepted for VS-10ETF10-M3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-10ETF10-M3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VS-10ETF10-M3?

VS-10ETF10-M3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VS-10ETF10-M3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VS-10ETF10-M3?

For technical support, including VS-10ETF10-M3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-10ETF10-M3 requirements.

6.How does Aetrix verify that VS-10ETF10-M3 is sourced from the original manufacturer or authorized distributors?

All VS-10ETF10-M3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-10ETF10-M3 meets industry standards.

7.What is the process for return or replacement of VS-10ETF10-M3?

All VS-10ETF10-M3 units undergo pre-shipment inspection (PSI). If there is an issue with VS-10ETF10-M3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VS-10ETF10-M3 part is unused and in its original packaging.

Return procedure for VS-10ETF10-M3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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