Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
PCFF60UP60F DIODE ULTRAFAST onsemi	5,918	RFQ	-	*	-	Bulk	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
ISL9R3060P2 DIODE GEN PURP 600V 30A TO220-2 onsemi	5,056	RFQ	Datasheet	Stealth™	TO-220-2	Bulk	Obsolete	Avalanche	600 V	30A	2.4 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
RJU6054SDPK-M0#T0 RECTIFIER DIODE, 30A, 600V Renesas Electronics Corporation	3,330	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
RJU6054WDPK-M0#T0 RECTIFIER DIODE Renesas Electronics Corporation	1,208	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BYC30-600P,127 DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors	7,896	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220AC	175°C (Max)
RURD3080 RECTIFIER DIODE, 30A, 800V Harris Corporation	250	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
NXPSC046506Q DIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors	20,200	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC04650X6Q DIODE SIL CARBIDE 650V 4A TO220F WeEn Semiconductors	2,826	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
RURD3090 RECTIFIER DIODE, 30A, 900V Harris Corporation	119	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
MBR1660 DIODE SCHOTTKY 60V 16A TO220-2 onsemi	533	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	60 V	16A	750 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	-	-	Through Hole	TO-220-2	-65°C ~ 150°C
G3S06503A DIODE SIC 650V 11.5A TO220AC Global Power Technology-GPT	390	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	181pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
RURD30100 RECTIFIER DIODE, 30A, 1000V Harris Corporation	365	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
NXPSC04650B6J DIODE SIL CARBIDE 650V 4A D2PAK WeEn Semiconductors	3,090	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
BYV60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	4,084	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
RURG3020 DIODE AVALANCHE 200V 30A TO247 Harris Corporation	575	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	200 V	30A	1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 200 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
1N4938 DIODE GEN PURP 200V 500MA DO35 Fairchild Semiconductor	57,593	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	200 V	500mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C (Max)
STPSC6H065BY-TR DIODE SIL CARBIDE 650V 6A DPAK STMicroelectronics	7,471	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	-	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	DPAK	-40°C ~ 175°C
IDK10G65C5XTMA1 DIODE SIL CARB 650V 10A TO263-2 Infineon Technologies	5,530	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	1.7 mA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
WNSC2D08650DJ DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	7,463	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C
BYQ60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	569	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C

Total 95236 Record«Prev 1... 704 705 706 707708709 710 711...4762 Next»

PRODUCT

PHONE

USER