Infineon Technologies IDK10G65C5XTMA1

Overview

IDK10G65C5XTMA1 from Infineon is a 650 V, 10 A silicon carbide Schottky diode in PG-TO263-2 package, designed for high-frequency switching in power conversion stages. It delivers zero reverse recovery charge, 1.5–2.2 V forward voltage at 10 A across –55°C to 150°C, and 15 nC capacitive charge at 400 V, enabling PFC and solar inverter designs requiring high efficiency and thermal robustness.

For engineers reviewing the IDK10G65C5XTMA1 datasheet, IDK10G65C5XTMA1 pinout, IDK10G65C5XTMA1 application, or IDK10G65C5XTMA1 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, 82 A surge current capability at 25°C, temperature-independent switching behavior, and compatibility with CoolMOS™ 650 V gate drivers in hard-switched topologies.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-efficiency AC/DC and DC/DC converters. Its unipolar conduction eliminates minority-carrier storage, resulting in no reverse recovery loss and minimal switching EMI - confirmed by 100 V/ns dv/dt ruggedness and 3.5 µJ stored energy at 400 V.

The device uses Infineon's 5th-generation thinQ!™ process with diffusion soldering and thin-wafer technology, achieving a 1.0–1.7 K/W junction-to-case thermal resistance and optimized figure of merit (Qc × Vf) for operation up to 175°C junction temperature.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode tab for thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10H065D, IDK10G65C5XTMA1 offers superior thermal performance (1.0–1.7 K/W R_thJC) and lower Q_c, making it optimal for high-density SMD power stages where board space and efficiency are critical.

Availability

IDK10G65C5XTMA1 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.

Supply support for IDK10G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDK10G65C5XTMA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC/DC and DC/DC conversion systems.

FAQ

What is the maximum junction temperature for reliable operation?

The IDK10G65C5XTMA1 is rated for continuous operation up to 175°C junction temperature, validated per JEDEC JESD22-A108. Its thermal resistance (R_thJC = 1.0–1.7 K/W) and stable forward voltage across temperature ensure predictable performance in sealed industrial enclosures without active cooling.

Does this diode require a gate resistor or snubber network?

No - as a unipolar Schottky diode, IDK10G65C5XTMA1 has no gate terminal and requires no external gate resistor. A small RC snubber (e.g., 10 Ω + 100 pF) may be used across anode-cathode in ultra-fast switching (>200 kHz) applications to damp ringing caused by stray inductance, but it is not mandatory per datasheet recommendations.

Can IDK10G65C5XTMA1 replace silicon fast recovery diodes directly?

Yes - it is a drop-in replacement in most cases due to identical PG-TO263-2 footprint and pinout. However, layout must minimize parasitic inductance (<10 nH) in high-di/dt paths, and gate drive timing should account for zero reverse recovery to avoid unnecessary dead-time extension that would reduce efficiency.

Is avalanche testing performed on every production unit?

Yes - all IDK10G65C5XTMA1 units undergo 10 ms avalanche stress testing at rated V_RRM per final data sheet Rev. 2.1. This ensures guaranteed ruggedness under transient overvoltage conditions such as lightning surges or inductive kickback, without requiring additional external protection components.