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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SDT05S60

Name: SDT05S60
Brand: Infineon Technologies
SKU: SDT05S60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SDT05S60

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: SDT05S60.pdf

Description:: DIODE SIL CARB 600V 5A TO220-2

Quantity:: RFQ Add To RFQ list

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Inventory:2,481

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Product details

Overview

SDT05S60 from Infineon Technologies is a 600 V, 5 A silicon carbide Schottky diode in PG-TO220-2-2 package, designed as a high-efficiency freewheeling and output rectifier in switched-mode power supplies. It features zero reverse recovery charge (Q_c = 14 nC), temperature-independent switching, and low forward voltage (V_F = 1.7 V @ 5 A, 150 °C), enabling high-frequency operation in PFC and DC-DC converters for server PSUs.

For engineers reviewing the SDT05S60 datasheet, SDT05S60 pinout, SDT05S60 application, or SDT05S60 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance (R_thJC = 3.5 K/W), junction-to-case power dissipation limit (P_tot = 43 W @ T_C = 25 °C), and rated surge current (I_FSM = 18.5 A).

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and MOSFET body diodes in high-efficiency topologies. Its unipolar conduction eliminates minority-carrier storage, resulting in no reverse recovery time (t_rr = n.a.) and no associated switching losses or EMI spikes - critical for >100 kHz operation in telecom rectifiers and solar inverters.

The device operates across -55 °C to +175 °C junction temperature with stable V_F and I_R characteristics. Capacitance drops from 170 pF at 1 V to 12 pF at 600 V, supporting low-loss snubberless designs and predictable gate-drive interaction in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - Maximum blocking voltage for use in 400 V DC bus systems with 50 V margin
I_F	5 A continuous - Rated for steady-state conduction at T_C = 100 °C in heatsink-mounted applications
Q_c	14 nC @ V_R = 400 V, di_F/dt = 200 A/µs - Enables precise loss modeling in hard-switched PFC stages
V_F	1.7 V @ 5 A, 150 °C - Low conduction loss improves efficiency over Si diodes by ≥0.3 V at full load
R_thJC	3.5 K/W - Allows direct thermal path to heatsink; supports 12 W junction power at ΔT = 42 K
I_FSM	18.5 A @ 10 ms - Withstands inrush currents in AC-DC front ends without derating
C_iss	12 pF @ V_R = 600 V - Minimizes capacitive coupling and dv/dt-induced turn-on in synchronous rectification

Pinout & Package

PG-TO220-2-2 package with isolated tab (pin 1 = cathode, pin 2 = anode). Metal tab is electrically connected to cathode and serves as primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Primary heat sink interface; must be electrically isolated from system ground unless circuit topology requires common-cathode configuration
Pin 2	Anode	Current entry point; routed to switching node or transformer secondary; requires low-inductance layout to minimize voltage overshoot

Key Features

Feature	Design Value
No reverse recovery	Eliminates t_rr-related switching losses and EMI, enabling clean turn-off in boost PFC without snubbers
Temperature-stable V_F	V_F increases only 0.4 V from 25 °C to 150 °C - enables consistent conduction loss prediction across operating range
Low Q_c	14 nC at 400 V - reduces stored charge loss by >90% vs. comparable Si FRD (typ. 120–200 nC)
High T_j rating	175 °C max junction temperature - supports compact thermal design in sealed enclosures without forced air
SiC material system	Bandgap of 3.2 eV enables 10× higher critical electric field than Si - intrinsic 600 V rating without edge termination complexity

Applications

Server PSU Output Rectification

Solar Inverter Freewheeling

Use Scenario: High-density 12 V/54 A output stage in 3 kW telecom-grade server power supply.

IC Role / Device Role / Timing Role: Output rectifier in synchronous buck converter, conducting during low-side MOSFET on-time.

Use Value: Zero Q_rr eliminates cross-conduction risk and reduces output ripple by 35% vs. Si FRD under same layout.

Use Scenario: Bidirectional freewheeling path in H-bridge inverter leg driving PV string at 800 V DC link.

IC Role / Device Role / Timing Role: Anti-parallel diode providing current path during dead-time and reactive power circulation.

Use Value: Stable 12 pF capacitance at 600 V ensures predictable dv/dt immunity and prevents false turn-on of IGBTs.

Industrial Motor Drive Brake Circuit

EV Onboard Charger PFC Stage

Use Scenario: Regenerative braking energy clamping in 400 V three-phase VFD with 15 kW output.

IC Role / Device Role / Timing Role: Snubberless flyback diode across DC-link capacitor, absorbing inductive kickback pulses.

Use Value: 18.5 A I_FSM withstands 10 ms brake transients without degradation; R_thJC = 3.5 K/W enables direct mounting to chassis.

Use Scenario: Boost diode in two-stage 6.6 kW OBC with interleaved PFC operating at 125 kHz.

IC Role / Device Role / Timing Role: Main rectifier in continuous conduction mode (CCM) boost stage, conducting 5 A RMS average current.

Use Value: 14 nC Q_c reduces switching loss by 2.1 W per diode vs. Si counterpart, directly improving thermal margin at 96% efficiency target.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D05060E (Wolfspeed)	Same 600 V/5 A rating; TO-220-2 package; Q_c = 15 nC; V_F = 1.8 V @ 5 A, 150 °C	Higher V_F increases conduction loss by ~0.1 V; identical thermal resistance	Preferred where legacy Wolfspeed footprint compatibility required
SS5P6 (STMicroelectronics)	600 V/5 A SiC Schottky; DPAK package; R_thJC = 5.0 K/W; Q_c = 13.5 nC	Lower thermal performance limits power handling at T_C > 85 °C; unsuitable for >10 W continuous dissipation	Only viable in space-constrained, low-power (<5 W) applications with PCB copper heatsinking

Compared with C3D05060E and SS5P6, SDT05S60 delivers the lowest V_F among 600 V/5 A SiC diodes in TO-220 format and the best thermal interface for industrial heatsink mounting - making it optimal for high-reliability, thermally demanding PFC and output rectification.

Availability

SDT05S60 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, industrial motor drives, and EV onboard chargers requiring stable component supply with long-term manufacturability and traceable sourcing.

Supply support for SDT05S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

The SDT05S60 belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion where zero-recovery behavior and thermal robustness are mandatory.

FAQ

Is SDT05S60 compatible with standard TO-220 heatsinks?

Yes. The PG-TO220-2-2 package uses industry-standard TO-220 mechanical dimensions and mounting hole spacing. Its isolated metal tab interfaces directly with standard insulating washers and thermal pads, supporting thermal resistance as low as 3.5 K/W when mounted with 0.5 N·m torque and 0.5 mm thickness thermal interface material.

Does SDT05S60 require gate drive or external control?

No. As a passive unipolar Schottky diode, SDT05S60 conducts automatically when forward-biased and blocks when reverse-biased. It has no gate terminal, no threshold voltage, and no control signal requirement - unlike SiC MOSFETs or hybrid modules.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F = 5 A at T_C = 100 °C. Derating begins above this point: at T_C = 125 °C, maximum continuous I_F drops to 3.5 A; at T_C = 150 °C, it is 1.8 A. Operation beyond 175 °C junction temperature is prohibited.

Can SDT05S60 replace a silicon fast recovery diode in an existing design?

Yes, with layout verification. Due to its zero Q_rr, reduced V_F, and lower capacitance, it typically improves efficiency and reduces EMI. However, verify snubber component values, gate-drive loop stability, and thermal interface - especially if replacing a higher-V_F Si diode previously used for soft-switching compensation.

SDT05S60 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 5A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 5 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 200 µA @ 600 V

Capacitance @ Vr, F:: 170pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

SDT05S60 FAQ

1.How can I place an order for SDT05S60 through Aetrix?

Please submit a Request for Quotation (RFQ) for SDT05S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDT05S60 reliable?

The price and inventory of SDT05S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT05S60 is usually 5 days.

3.What payment methods are accepted for SDT05S60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT05S60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDT05S60?

SDT05S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDT05S60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDT05S60?

For technical support, including SDT05S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT05S60 requirements.

6.How does Aetrix verify that SDT05S60 is sourced from the original manufacturer or authorized distributors?

All SDT05S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT05S60 meets industry standards.

7.What is the process for return or replacement of SDT05S60?

All SDT05S60 units undergo pre-shipment inspection (PSI). If there is an issue with SDT05S60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDT05S60 part is unused and in its original packaging.

Return procedure for SDT05S60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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