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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S4D10120G 1200V, 10A, D2PAK, SIC SCHOTTKY SMC Diode Solutions	133	RFQ	-	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-263-2	-
WNSC2D12650TJ DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,985	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	380pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
SCS310AHGC9 DIODE SIL CARB 650V 10A TO220ACP Rohm Semiconductor	361	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
RURU5060 DIODE AVALANCHE 600V 50A TO218 Harris Corporation	3,504	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	600 V	50A	1.6 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	500 µA @ 600 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RURG8050 DIODE AVALANCHE 500V 80A TO247-2 Harris Corporation	481	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	500 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 500 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RURU8040 DIODE AVALANCHE 400V 80A TO218 Harris Corporation	3,000	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	400 V	80A	1.6 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	500 µA @ 400 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
WNSC12650T6J DIODE SIL CARBIDE 650V 12A 5DFN WeEn Semiconductors	2,998	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	328pF @ 1V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	175°C
IDT10S60C DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	1,479	RFQ	Datasheet	thinQ!™	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	10A (DC)	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
SICU0460B-TP DIODE SIL CARBIDE 650V 4A DPAK Micro Commercial Co	2,413	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.8 V @ 4 A	No Recovery Time > 500mA (Io)	-	15 µA @ 650 V	200pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
FFSH1665A DIODE SIL CARB 650V 23A TO247-2 onsemi	8,896	RFQ	Datasheet	-	TO-247-2	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	650 V	23A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 150°C
FFSP0465A DIODE SIL CARB 650V 8.6A TO220-2 onsemi	792	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8.6A	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	258pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
NXPSC066506Q DIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
PCDD0665G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,976	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
NXPSC06650B6J DIODE SIL CARBIDE 650V 6A D2PAK WeEn Semiconductors	3,188	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
PCDB0665G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
PCDP05120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,943	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	252pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1265G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	452pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
NXPSC06650X6Q DIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors	197	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
IDH10S60CAKSA1 DIODE SIL CARB 600V 10A TO220-2 Infineon Technologies	6,184	RFQ	Datasheet	CoolSiC™+	TO-220-2	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
PCDP0665G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,998	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C

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