Infineon Technologies IDT10S60C

Overview

IDT10S60C from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide Schottky diode rated for 600 V repetitive peak reverse voltage and 10 A continuous forward current at T_C < 140 °C, with zero reverse recovery charge (Q_c = 24 nC), 1.5–2.1 V forward voltage across 25–150 °C junction temperature, and rugged dv/dt capability of 50 V/ns - deployed in CCM PFC stages and industrial motor drives.

For engineers reviewing the IDT10S60C datasheet, IDT10S60C pinout, IDT10S60C application, or IDT10S60C equivalent, key selection criteria include its SiC-based zero-recovery switching behavior, thermal resistance of 1.5 K/W (junction-to-case), surge current rating of 84 A (10 ms sine half-wave), and PG-TO220-2-2 package with Cathode (Pin 1) and Anode (Pin 2) terminal assignment.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery time (t_rr) and associated switching losses. Its capacitive displacement current waveform exhibits a fixed time constant t_c < 10 ns, independent of junction temperature, load current, or di/dt.

Electrical performance remains stable across –55 to +175 °C operating range: forward voltage increases only ~0.2 V from 25 °C to 150 °C at 10 A, and reverse leakage stays ≤1400 µA at 600 V and 150 °C - enabling high-efficiency, thermally robust operation in hard-switched topologies.

Key Specifications

Pinout & Package

Package: PG-TO220-2-2 - insulated plastic housing with metal tab (cathode-connected), M3/M3.5 screw-mount compatible, 60 Ncm max mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10060A and STPSC1006D, IDT10S60C offers superior temperature stability of V_F and tighter Q_c tolerance, making it optimal for wide-temperature-range industrial drives and high-reliability telecom PSUs where parametric consistency matters more than absolute minimum V_F.

Availability

IDT10S60C is available at Aetrix Electronics and suitable for industrial motor drives, CCM PFC front-ends, and solar microinverter designs requiring stable component supply, long-lifecycle support, and qualified SiC performance under sustained thermal stress.

Supply support for IDT10S60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride device development.

IDT10S60C belongs to Infineon's thinQ!™ 2G SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial and renewable energy systems where zero-recovery behavior and thermal robustness are mandatory.

FAQ

Is IDT10S60C suitable for use in synchronous rectification topologies?

No - IDT10S60C is a unidirectional Schottky diode with fixed anode-cathode polarity and no gate control. It cannot replace MOSFETs in synchronous rectification. Its role is limited to freewheeling, boost output, or anti-parallel clamping where passive, zero-recovery conduction is required without active switching control.

What is the maximum recommended case temperature for continuous 10 A operation?

The datasheet specifies I_F = 10 A is rated for T_C < 140 °C. At T_C = 140 °C, junction temperature reaches 175 °C (T_j = T_C + P_tot × R_thJC ≈ 140 + 100 × 1.5). Operation above 140 °C case temperature violates the continuous rating and risks accelerated parametric drift or thermal runaway.

Does IDT10S60C require a snubber circuit in hard-switched PFC applications?

Typically no - its 50 V/ns dv/dt rating and absence of reverse recovery current eliminate the need for RC snubbers in most 65–100 kHz CCM PFC designs. However, layout parasitics may still induce ringing; a small RC dampener (e.g., 10 Ω + 100 pF) across the diode is recommended if measured overshoot exceeds 10% of V_RRM.

Can IDT10S60C be mounted directly to a grounded heatsink without isolation?

No - Pin 1 (metal tab) is the cathode and electrically connected to the die. Mounting to a grounded heatsink creates a short between cathode and system ground unless the cathode node is at ground potential. Insulating pads or shoulder washers rated for ≥600 V isolation must be used unless the application topology explicitly grounds the cathode.