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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
NXPSC08650D6J DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	7,184	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C (Max)
NXPSC086506Q DIODE SIL CARB 650V 8A TO220AC WeEn Semiconductors	3,000	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C (Max)
NXPSC08650X6Q DIODE SIL CARBIDE 650V 8A TO220F WeEn Semiconductors	2,926	RFQ	Datasheet	-	TO-220-2 Full Pack, Isolated Tab	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Through Hole	TO-220F	175°C (Max)
RHRG5060 DIODE GEN PURP 600V 50A TO247-2 onsemi	1,778	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 600 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
JPAD5 TO-92 2L ROHS DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	676	RFQ	Datasheet	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Active	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	5 pA @ 20 V	0.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C
STPSC12C065DY DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	154	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	530pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
FFSPF0865A DIODE SIC 650V 8A TO220F-2FS onsemi	915	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C
NXPSC08650B6J DIODE SIL CARBIDE 650V 8A D2PAK WeEn Semiconductors	3,160	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	D2PAK	175°C (Max)
LSIC2SD065A06A DIODE SIL CARB 650V 18.5A TO220L Littelfuse Inc.	758	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
VS-100BGQ015 SCHOTTKY RECT 15V 100A POWLRTAB Vishay General Semiconductor - Diodes Division	288	RFQ	Datasheet	-	PowerTab™, PowIRtab™	Bulk	Obsolete	Schottky	15 V	100A	460 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 15 V	-	-	-	Chassis Mount	PowIRtab™	-
JPAD200 TO-92 2L DIODE GEN PURP 35V 10MA TO92 Linear Integrated Systems, Inc.	1,031	RFQ	Datasheet	PAD	TO-226-2, TO-92-2 (TO-226AC)	Bulk	Active	Standard	35 V	10mA	1.5 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	200 pA @ 20 V	1.5pF @ 5V, 1MHz	-	-	Through Hole	TO-92	-55°C ~ 150°C
CDBJFSC8650-G DIODE SIL CARBIDE 650V 8A TO220F Comchip Technology	479	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	560pF @ 0V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
IDDD12G65C6XTMA1 DIODE SIL CARB 650V 34A HDSOP-10 Infineon Technologies	2,234	RFQ	Datasheet	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Last Time Buy	SiC (Silicon Carbide) Schottky	650 V	34A	-	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 420 V	594pF @ 1V, 1MHz	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
UJ3D06520KSD DIODE SIL CARB 650V 10A TO247-3 Qorvo	9,218	RFQ	Datasheet	Gen-III	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	654pF @ 1V, 1MHz	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
STTH30S06W DIODE GEN PURP 600V 30A DO247-2 STMicroelectronics	521	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Obsolete	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-	-	-	Through Hole	-	-40°C ~ 175°C
SDT08S60 DIODE SIL CARB 600V 8A TO220-2-2 Infineon Technologies	6,617	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	280pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
PCDP1065G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,478	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDB1065G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	4,000	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	-	-	Surface Mount	TO-263	-55°C ~ 175°C
IV1D06006P3 DIODE SIC 650V 16.7A TO252-3 Inventchip	2,481	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Cut Tape (CT)	Active	SiC (Silicon Carbide) Schottky	650 V	16.7A	1.65 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	224pF @ 1V, 1MHz	-	-	Surface Mount	TO-252-3	-55°C ~ 175°C
FFSPF1065A DIODE SIC 650V 10A TO220F-2FS onsemi	930	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	-	-	Through Hole	TO-220F-2FS	-55°C ~ 175°C

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