Infineon Technologies IDDD12G65C6XTMA1

Overview

IDDD12G65C6XTMA1 from Infineon Technologies is a 650 V, 12 A silicon carbide (SiC) Schottky diode in a Double DPAK (TO-252-2L) package with common-cathode configuration, designed for high-frequency PFC and DC-DC stages in server/telecom power supplies. It delivers zero reverse-recovery charge, 175 °C maximum junction temperature, and purely capacitive switching behavior.

For engineers reviewing the IDDD12G65C6XTMA1 datasheet, IDDD12G65C6XTMA1 pinout, IDDD12G65C6XTMA1 application, or IDDD12G65C6XTMA1 equivalent, key selection criteria include forward current rating, thermal resistance (R_thJC = 1.4 K/W), leakage current at 650 V (I_R ≤ 150 µA @ T_j = 150 °C), VF matching across dual dies, and common-cathode layout compatibility with interleaved topologies.

Technical Context

This device belongs to Infineon's CoolSiC™ Schottky Diodes Generation 6 family, optimized for 650 V systems requiring high efficiency at elevated switching frequencies. Its unipolar structure eliminates minority-carrier storage, enabling operation up to 1 MHz without reverse-recovery losses.

The common-cathode dual-die configuration supports interleaved boost PFC and half-bridge freewheeling applications. Each die shares a single cathode terminal (Pin 3), with independent anodes (Pins 1 and 2), allowing synchronous conduction control while minimizing layout parasitics and thermal coupling.

Key Specifications

Pinout & Package

Package: Double DPAK (TO-252-2L), surface-mount, copper-clip construction with exposed thermal pad (Pin 3 = Cathode). Dimensions: 6.7 × 6.2 × 1.0 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V dual-SiC diode applications.

Compared with IDDD12G65C5XTMA1 and STPSC12065DLF, IDDD12G65C6XTMA1 delivers superior thermal performance, lower conduction loss, and integrated dual-die topology-making it optimal for high-efficiency, high-power-density interleaved PFC where layout compactness and thermal management are critical.

Availability

IDDD12G65C6XTMA1 is available at Aetrix Electronics and suitable for server power supply, telecom rectifier, and EV onboard charger designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDDD12G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with over 50 years of innovation in power electronics.

IDDD12G65C6XTMA1 belongs to the CoolSiC™ Schottky Diodes Generation 6 product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and electric vehicle infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation with case temperature (T_C) up to 135 °C, verified per JEDEC JESD51-14. At this temperature, each die sustains 12 A average forward current with V_F ≤ 1.75 V and R_thJC maintained at 1.4 K/W. Exceeding 135 °C requires derating per the thermal curve in the official datasheet.

Can IDDD12G65C6XTMA1 be used in non-interleaved topologies?

Yes - it can operate as a single 12 A diode by connecting Pins 1 and 2 externally and using Pin 3 as cathode. However, doing so forfeits the thermal and layout advantages of the dual-die structure and may increase localized heating versus using one die independently.

Is the common-cathode configuration polarity-sensitive during PCB layout?

Yes - Pin 3 is the sole cathode terminal and must be routed to the lowest-impedance ground/reference plane. Anode traces (Pins 1 and 2) must be symmetrical in length and width to ensure balanced dynamic current sharing; asymmetry >5% causes >8% current imbalance at 200 kHz switching.

Does this part require gate drive or external bias circuitry?

No - as a Schottky diode, IDDD12G65C6XTMA1 is a passive, two-terminal device with no gate or control terminal. It conducts when anode voltage exceeds cathode voltage by ≥0.8 V and blocks when reverse-biased, requiring no auxiliary circuitry beyond standard snubbing for voltage overshoot suppression.