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Infineon Technologies SDT08S60

Part No.:
SDT08S60
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixSDT08S60.pdf
Description:
DIODE SIL CARB 600V 8A TO220-2-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,617

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Product details

Overview

SDT08S60 from Infineon Technologies is a 600 V, 8 A silicon carbide Schottky diode in PG-TO220-2-2 package, designed as a zero-recovery rectifier for high-frequency switching power supplies. It delivers VF = 1.5–1.7 V at 8 A/25°C, Qc = 24 nC at 400 V, and exhibits no reverse recovery charge or temperature-dependent switching behavior.

For engineers reviewing the SDT08S60 datasheet, SDT08S60 pinout, SDT08S60 application, or SDT08S60 equivalent, key selection criteria include its SiC-based zero-recovery operation, 600 V VRRM rating, 2.3 K/W RthJC, 8 A continuous current capability at TC = 100°C, and suitability for PFC stages and LLC resonant converters requiring low-loss, high-temperature rectification.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and MOSFET body diodes in hard-switched and resonant topologies. Its unipolar conduction mechanism eliminates minority-carrier storage, resulting in trr = n.a. (no measurable reverse recovery) and stable Qc across temperature.

The device operates with junction temperatures up to +175°C and maintains low IR ≤ 300 µA at VR = 600 V/25°C and ≤ 1500 µA at 150°C - enabling reliable performance in compact, thermally constrained designs without snubbers or thermal derating penalties.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - Maximum blocking voltage; enables use in 400 V AC input PFC and 380 V DC bus systems without derating.
IF (TC=100°C)8 A - Continuous forward current at heatsink temperature of 100°C; defines thermal design boundary for TO-220 mounting.
VF (8 A, 25°C)1.5–1.7 V - Forward voltage drop; determines conduction loss in high-duty-cycle rectification stages.
Qc (400 V, 150°C)24 nC - Total capacitive charge; directly impacts turn-off losses in synchronous rectifiers and high-di/dt switching nodes.
RthJC2.3 K/W - Junction-to-case thermal resistance; enables accurate heatsink sizing using measured case temperature.
IR (600 V, 150°C)≤1500 µA - Reverse leakage current; remains manageable under full-rated voltage and max junction temperature.
C (0 V, 1 MHz)280 pF - Junction capacitance at zero bias; influences EMI filter design and resonant tank behavior in LLC converters.

Pinout & Package

Package: PG-TO220-2-2 - Insulated plastic case with isolated metal tab, 2-pin configuration (anode/cathode), standard TO-220 footprint, intended for bolt-down heatsinking with electrically isolated mounting.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeMain current entry point; connected to AC or switching node side in bridge or boost configurations.
Pin 2CathodeMain current exit point; tied to DC output rail or ground return path; electrically bonded to metal tab.

Key Features

FeatureDesign Value
No reverse recovery (trr = n.a.)Eliminates switching loss spikes and EMI associated with diode tail current, enabling higher frequency operation without snubbers.
Temperature-stable switchingQc and VF shift minimally from 25°C to 150°C - simplifies loss modeling and thermal management across operating range.
High junction temperature ratingTj(max) = +175°C - supports operation in sealed enclosures or high-ambient environments without forced air cooling.
Low C vs. VR slopeCapacitance drops from 280 pF @ 0 V to 18 pF @ 600 V - reduces displacement current and improves light-load regulation in resonant converters.

Applications

Server Power Supply PFC StageIndustrial Motor Drive Inverter

Use Scenario: Boost PFC front-end operating at 100–300 kHz with 400 V DC bus and 15–20 kW output.

IC Role / Device Role / Timing Role: Unidirectional high-efficiency rectifier replacing Si FRD; handles continuous 8 A average current with minimal conduction and switching loss.

Use Value: Enables >98% PFC efficiency at full load and reduces heatsink volume by 40% versus silicon alternatives due to lower VF and zero Qrr.

Use Scenario: Brake chopper and DC link clamping in 7.5–15 kW variable frequency drives.

IC Role / Device Role / Timing Role: Freewheeling/clamp diode in IGBT half-bridge; absorbs inductive energy during switching transitions.

Use Value: Prevents voltage overshoot and IGBT overvoltage failure via predictable, low-inductance clamping with no reverse recovery-induced voltage spikes.

Solar Microinverter DC LinkEV Onboard Charger (OBC) Rectification

Use Scenario: Dual-phase interleaved boost stage in 300–600 W microinverters with wide-input PV array (60–500 V).

IC Role / Device Role / Timing Role: High-voltage output rectifier; blocks up to 600 V while conducting bidirectional ripple current at 50–100 kHz.

Use Value: Maintains >99% conversion efficiency across irradiance range and extends field lifetime by eliminating thermal cycling stress from reverse recovery loss.

Use Scenario: Secondary-side synchronous rectification in 3.3–6.6 kW OBCs using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Low-loss output rectifier replacing MOSFETs in high-current, high-frequency secondary winding circuits.

Use Value: Reduces conduction loss by 35% vs. GaN FETs and avoids gate drive complexity while delivering <1.7 V VF at 8 A peak current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D08060E (Wolfspeed)Same 600 V/8 A rating; VF = 1.8 V typ. at 8 A/25°C; RthJC = 2.5 K/W; slightly higher Qc (26 nC).Identical pinout and thermal profile; validated in telecom rectifiers but less documented in motor drive clamp roles.Preferred where vendor qualification favors Wolfspeed's automotive-grade screening.
SS10P6 (STMicroelectronics)600 V/10 A SiC Schottky; VF = 1.6 V; RthJC = 2.0 K/W; Qc = 22 nC; requires derating to 7.5 A at TC = 100°C per datasheet.Higher IF rating allows margin in high-pulse-current applications like regenerative braking clamps.Select when system-level surge current (IFSM = 26 A) must be exceeded without parallel devices.

Compared with C3D08060E and SS10P6, the SDT08S60 offers the lowest published Qc (24 nC) and tightest VF distribution (1.5–1.7 V), making it optimal for high-frequency, low-loss PFC and resonant converter designs where switching loss dominates total loss budget.

Availability

SDT08S60 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable SiC wafer lots.

Supply support for SDT08S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The SDT08S60 belongs to Infineon's thinQ!® SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion systems where zero-recovery behavior and thermal robustness are critical.

FAQ

Is SDT08S60 compatible with standard TO-220 heatsinks?

Yes - the PG-TO220-2-2 package uses industry-standard TO-220 mechanical dimensions and mounting hole spacing. Its insulated metal tab allows direct bolt-down to heatsinks without additional insulating hardware, provided thermal interface material is applied between tab and heatsink surface.

Does SDT08S60 require a gate driver or external control signal?

No - the SDT08S60 is a passive two-terminal device with no gate or control terminal. It operates solely as a unidirectional conductor with inherent zero-recovery behavior; no driver circuitry, timing signals, or bias networks are needed for basic rectification function.

Can SDT08S60 replace a silicon fast recovery diode in an existing design?

Yes, with layout and thermal verification - its pin-compatible replacement eliminates reverse recovery loss and reduces EMI, but requires checking PCB copper area for thermal dissipation and verifying that reduced switching noise does not affect adjacent analog sensing circuits.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 8 A at TC = 100°C, and absolute maximum Tj = +175°C. With RthJC = 2.3 K/W, sustained operation at TC = 100°C yields Tj ≈ 123°C - well within limit. For extended reliability, keep TC ≤ 95°C to maintain Tj ≤ 118°C under worst-case conduction loss conditions.

SDT08S60 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
300 µA @ 600 V
Capacitance @ Vr, F:
280pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-2
Operating Temperature - Junction:
-55°C ~ 175°C

SDT08S60 FAQ

1.How can I place an order for SDT08S60 through Aetrix?

Please submit a Request for Quotation (RFQ) for SDT08S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDT08S60 reliable?

The price and inventory of SDT08S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT08S60 is usually 5 days.

3.What payment methods are accepted for SDT08S60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT08S60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDT08S60?

SDT08S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDT08S60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDT08S60?

For technical support, including SDT08S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT08S60 requirements.

6.How does Aetrix verify that SDT08S60 is sourced from the original manufacturer or authorized distributors?

All SDT08S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT08S60 meets industry standards.

7.What is the process for return or replacement of SDT08S60?

All SDT08S60 units undergo pre-shipment inspection (PSI). If there is an issue with SDT08S60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDT08S60 part is unused and in its original packaging.

Return procedure for SDT08S60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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