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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FFSH20120A SILICON CARBIDE SCHOTTKY DIODE onsemi	900	RFQ	Datasheet	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100KHz	-	-	Through Hole	TO-247-2	-
QSD25HCS170U 1700v 25amp SiC Schottky Barrier Quest Semi	1,233	RFQ	-	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	94A	1.9 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1700 V	2822pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
NC1D120C40GTDN SiC Diode 1200V 40A Dual Die TO2 NextGen Components	300	RFQ	Datasheet	NC1D	TO-247-3L	Tube	Active	SiC (Silicon Carbide) Schottky	1.2 kV	40A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	-	50 µA @ 1.2 kV	1371pF @ 100mV, 1MHz	-	-	Through Hole	TO-247-3L	-55°C ~ 175°C
NC1D120C60GTDN SiC Schottky 1200V 60A TO247- 3L NextGen Components	300	RFQ	Datasheet	-	TO-247-3L	Tube	Active	SiC (Silicon Carbide) Schottky	-	60A	-	-	-	-	2125pF @ 0.1V, 1MHz	-	-	Surface Mount	TO-247-3L	-55°C ~ 175°C
ADC4D10120E DIODE SIL SIC 1200V 33A TO252-2 Analog Power Inc.	2,500	RFQ	Datasheet	WBG	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	33A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
ADC4D10120H DIODE SIL SIC 1200V 31.5A TO247- Analog Power Inc.	950	RFQ	Datasheet	WBG	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	31.5A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 1200 V	6.3pF @ 0V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
ADE4D20120G DIODE SIL SIC 1200V 56A TO263-2 Analog Power Inc.	600	RFQ	Datasheet	WBG	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	56A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 1200 V	12pF @ 0V, 100kHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
ADC4D20120H DIODE SIL SIC 1200V 54A TO247-2 Analog Power Inc.	800	RFQ	Datasheet	WBG	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	54A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	10 µA @ 1200 V	12pF @ 0V, 100kHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
RJS6004TDPP-EJ#T2 DIODE SCHOTT 600V 10A TO220FP-2L Renesas Electronics Corporation	3,343	RFQ	Datasheet	-	TO-220-2 Full Pack	Bulk	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-220FP-2L	-55°C ~ 150°C
1N459 DIODE GEN PURP 200V 500MA DO35 onsemi	30,000	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	200 V	500mA	1 V @ 100 mA	Standard Recovery >500ns, > 200mA (Io)	-	25 nA @ 175 V	6pF @ 0V, 1MHz	-	-	Through Hole	DO-35	175°C (Max)
QSD10HCS500U 5000v 10amp Homogeneous SiC Scho Quest Semi	500	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	5000 V	66A	1.9 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 5000 V	3880pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
SI-A3000 DIODE GP 8KV 2.5A HOCKEY PUCK Diotec Semiconductor	104	RFQ	Datasheet	-	UGE	Box	Active	Standard	8000 V	2.5A	6 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 8 V	-	-	-	Chassis Mount	Hockey Puck	-50°C ~ 150°C
BAV21-T50A BAV21 - High Voltage General Pur Fairchild Semiconductor	85	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	250 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C
MBR0530L-TP DIODE SCHOTTKY 30V 500MA SOD123 Micro Commercial Co	916	RFQ	Datasheet	-	SOD-123	Tape & Reel (TR)	Active	Schottky	30 V	500mA	430 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130 µA @ 30 V	170pF @ 0V, 1MHz	-	-	Surface Mount	SOD-123	-65°C ~ 125°C
UPS120E3/TR7 DIODE SCHOTTKY 20V 1A POWERMITE1 Microchip Technology	308	RFQ	Datasheet	-	DO-216AA	Tape & Reel (TR)	Active	Schottky	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 20 V	-	-	-	Surface Mount	Powermite 1 (DO216-AA)	-55°C ~ 125°C
B540C-13-F DIODE SCHOTTKY 40V 5A SMC Diodes Incorporated	868	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Schottky	40 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	300pF @ 4V, 1MHz	-	-	Surface Mount	SMC	-55°C ~ 150°C
PMEG4030ER-QX DIODE SCHOTTKY 40V 3A SOD123W Nexperia USA Inc.	877	RFQ	-	-	SOD-123W	Tape & Reel (TR)	Active	Schottky	40 V	3A	540 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	250pF @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	SOD-123W	150°C
DMA80I1600HA DIODE GEN PURP 1.6KV 80A TO247 IXYS	35	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	80A	1.17 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1600 V	43pF @ 400V, 1MHz	-	-	Through Hole	TO-247	-55°C ~ 175°C
JANTX1N5623US DIODE GEN PURP 1KV 1A D-5A Microchip Technology	34	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1000 V	15pF @ 12V, 1MHz	Military	MIL-PRF-19500/429	Surface Mount	D-5A	-65°C ~ 175°C
JANTX1N5819UR-1 DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology	66	RFQ	Datasheet	-	DO-213AB, MELF (Glass)	Bag	Active	Schottky	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	70pF @ 5V, 1MHz	Military	MIL-PRF-19500/586	Surface Mount	DO-213AB (MELF, LL41)	-65°C ~ 125°C

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