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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDH09G65C5XKSA2 DIODE SIL CARB 650V 9A TO220-2-1 Infineon Technologies	2,985	RFQ	Datasheet	CoolSiC™+	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	650 V	9A	1.7 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 650 V	270pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
SK1840D2R DIODE SCHOTTKY 40V 18A TO263AB Diotec Semiconductor	60,800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	40 V	18A	580 mV @ 18 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-50°C ~ 150°C
UFT800B DIODE GEN PURP 100V 8A TO220AC Diotec Semiconductor	1,500	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	100 V	8A	1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
NC1D120C10KTNG SiC Schottky 1200V 10A TO247- 2L NextGen Components	500	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	-	10A	-	-	-	-	670pF @ 0.1V, 1MHz	-	-	Surface Mount	TO-247-2	-55°C ~ 175°C
FH06004Y DIODE SIL CARB 650V 4A SMAF fastSiC	1,000	RFQ	-	Husky	DO-221AC, SMA Flat Leads	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6.2A	1.55 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 520 V	16pF @ 400V, 1MHz	-	-	Surface Mount	DO-221AC (SlimSMA)	-55°C ~ 175°C
FT2000AA DIODE GEN PURP 50V 20A TO220AC Diotec Semiconductor	224,875	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	50 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
FT2000KB DIODE GEN PURP 100V 20A TO220AC Diotec Semiconductor	194,798	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	100 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
FT2000AB DIODE GEN PURP 100V 20A TO220AC Diotec Semiconductor	115,000	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	100 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
FT2000KA DIODE GEN PURP 50V 20A TO220AC Diotec Semiconductor	98,840	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	50 V	20A	960 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 150°C
SBX2550 DIODE SCHOTTKY 50V 25A P600 Diotec Semiconductor	500	RFQ	Datasheet	-	P600, Axial	Tape & Reel (TR)	Active	Schottky	50 V	25A	570 mV @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	-	-	Through Hole	P600	-50°C ~ 150°C
KT20A150 DIODE GEN PURP 150V 20A TO220AC Diotec Semiconductor	1,050	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	150 V	20A	980 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
KT20K150 DIODE GEN PURP 150V 20A TO220AC Diotec Semiconductor	433	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	150 V	20A	980 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 150 V	-	-	-	Through Hole	TO-220AC	-50°C ~ 175°C
ADC6D10065G DIODE SIL SIC 650V 36A TO263-2 Analog Power Inc.	1,000	RFQ	Datasheet	WBG	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.8 V @ 2 A	No Recovery Time > 500mA (Io)	-	2 µA @ 650 V	6.3pF @ 0V, 100kHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
IDH16S60CAKSA1 DIODE SIL CARB 600V 16A TO220-2 Infineon Technologies	12,385	RFQ	Datasheet	CoolSiC™+	TO-220-2	Bulk	Active	SiC (Silicon Carbide) Schottky	600 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	650pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
QSD50HCS120U 1200v 50amp SiC Schottky Barrier Quest Semi	1,000	RFQ	-	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	149A	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	2380000pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220-2L	-55°C ~ 175°C
NC1D120C20KTNG SiC Schottky 1200V 20A TO247- 2L NovuSem	500	RFQ	Datasheet	NC1D	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	1371pF @ 0V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C
P2500Y DIODE AVALANCHE 2KV 25A P600 Diotec Semiconductor	8,000	RFQ	Datasheet	-	P600, Axial	Tape & Reel (TR)	Active	Avalanche	2000 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 2 V	-	-	-	Through Hole	P600	-50°C ~ 175°C
ADC3D10065I DIODE SIL SIC 1200V 10A TO220 Analog Power Inc.	550	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	2 µA @ 650 V	6.3pF @ 200V, 100kHz	-	-	Through Hole	TO-220F	-40°C ~ 175°C
QSD10HCS120U Schottky barrier diode 1200v 10a Quest Semi	1,600	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	37A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	770pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
NC1D120C30KTNG SiC Schottky 1200V 30A TO247- 2L NovuSem	300	RFQ	Datasheet	NC1D	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 1200 V	2125pF @ 0.1V, 1MHz	-	-	Through Hole	TO-247-2L	-55°C ~ 175°C

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