Infineon Technologies IDH09G65C5XKSA2

Overview

IDH09G65C5XKSA2 from Infineon Technologies is a 650 V, 9 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency, high-temperature power conversion. It delivers zero reverse recovery charge, 14 nC capacitive charge at 400 V, 1.5–1.7 V forward voltage at 9 A/25°C, and operates up to 175°C junction temperature-enabling PFC stages and solar inverters with reduced EMI and thermal stress.

For engineers reviewing the IDH09G65C5XKSA2 datasheet, IDH09G65C5XKSA2 pinout, IDH09G65C5XKSA2 application, or IDH09G65C5XKSA2 equivalent, key selection criteria include its SiC-specific dv/dt ruggedness (100 V/ns), surge current rating (75 A @ 10 ms, TC = 25°C), thermal resistance (RthJC = 1.1–1.8 K/W), and RoHS-compliant Pb-free plating.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered die attach and thin-wafer technology to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero-recovery operation across -55°C to 175°C.

The device is rated for repetitive 650 V blocking (VRRM), withstands 100 V/ns dv/dt under full reverse bias, and sustains 396 A non-repetitive peak forward current (tp = 10 µs). Its RthJC is specified at 1.1–1.8 K/W, supporting high-power density designs when mounted with M3 screws at 70 Ncm torque.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (2-pin, isolated tab), lead-free, RoHS compliant. Mounting via M3 screw at 70 Ncm torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D08065A and STPSC10H065D, IDH09G65C5XKSA2 offers the lowest VF at rated current and highest surge capability-making it optimal for thermally constrained, high-reliability PFC and solar inverter applications where conduction loss and transient robustness are prioritized.

Availability

IDH09G65C5XKSA2 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDH09G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDH09G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-density power conversion systems.

FAQ

Is IDH09G65C5XKSA2 pin-compatible with standard TO-220-2 silicon diodes?

Yes-IDH09G65C5XKSA2 uses the industry-standard PG-TO220-2 footprint with cathode on Pin 1 and anode on Pin 2. Mechanical mounting dimensions, screw hole placement (M3), and lead pitch match legacy TO-220-2 diodes, enabling drop-in replacement in existing PCB layouts without rework.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies continuous forward current IF = 9 A at TC < 145°C. Operation above 145°C is limited to short-duration surges per Table 3; sustained case temperatures beyond 145°C require derating to maintain junction temperature ≤175°C, using RthJC = 1.1–1.8 K/W and thermal modeling.

Does IDH09G65C5XKSA2 require a gate driver or external control circuitry?

No-it is a passive two-terminal Schottky diode with no gate or control terminal. It conducts when anode voltage exceeds cathode voltage by ≥VF and blocks when reverse biased. No driver, biasing, or protection circuitry is needed beyond standard snubbing and layout best practices for high dv/dt.

How does the 100 V/ns dv/dt rating impact layout requirements?

The 100 V/ns rating means the diode can tolerate rapid voltage transients without false turn-on. To preserve this ruggedness, layout must minimize stray inductance: keep high-di/dt paths short, use ground planes beneath power traces, avoid sharp bends near pins, and ensure clean separation between switching node and gate/control routing.