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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IXFR48N60P

IXFR48N60P

MOSFET N-CH 600V 32A ISOPLUS247

Littelfuse Inc.

4,106 0.00
RFQ
IXFR48N60P

Datasheet

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 150mOhm @ 24A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFX150N30P3

IXFX150N30P3

MOSFET N-CH 300V 150A PLUS247-3

IXYS

6,540 0.00
RFQ
IXFX150N30P3

Datasheet

HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXFK64N60P

IXFK64N60P

MOSFET N-CH 600V 64A TO264AA

Littelfuse Inc.

2,383 0.00
RFQ
IXFK64N60P

Datasheet

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tc) 10V 96mOhm @ 500mA, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
IXTT16N20D2

IXTT16N20D2

MOSFET N-CH 200V 16A TO268

Littelfuse Inc.

6,295 0.00
RFQ
IXTT16N20D2

Datasheet

Depletion TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 200 V 16A (Tc) - 73mOhm @ 8A, 0V - 208 nC @ 5 V ±20V 5500 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268AA
IXFT320N10T2

IXFT320N10T2

MOSFET N-CH 100V 320A TO268

IXYS

3 0.00
RFQ
IXFT320N10T2

Datasheet

HiPerFET™, TrenchT2™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268AA
IXFR140N30P

IXFR140N30P

MOSFET N-CH 300V 70A ISOPLUS247

Littelfuse Inc.

6,327 0.00
RFQ
IXFR140N30P

Datasheet

HiPerFET™, Polar TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 26mOhm @ 70A, 10V 5V @ 8mA 185 nC @ 10 V ±20V 14800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
IXFX20N120P

IXFX20N120P

MOSFET N-CH 1200V 20A PLUS247-3

Littelfuse Inc.

2,748 0.00
RFQ
IXFX20N120P

Datasheet

HiPerFET™, Polar TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 570mOhm @ 10A, 10V 6.5V @ 1mA 193 nC @ 10 V ±30V 11100 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
IXFX120N65X2

IXFX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

Littelfuse Inc.

8,763 0.00
RFQ
IXFX120N65X2

Datasheet

HiPerFET™, Ultra X2 TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
TK100L60W,VQ

TK100L60W,VQ

MOSFET N-CH 600V 100A TO3P

Toshiba Semiconductor and Storage

3 0.00
RFQ
TK100L60W,VQ

Datasheet

DTMOSIV TO-3PL Tube Active N-Channel MOSFET (Metal Oxide) 600 V 100A (Tc) 10V 18mOhm @ 50A, 10V 3.7V @ 5mA 360 nC @ 10 V ±30V 15000 pF @ 30 V - 797W (Tc) 150°C (TJ) - - Through Hole TO-3P(L)
IXFN48N60P

IXFN48N60P

MOSFET N-CH 600V 40A SOT227B

IXYS

9,569 0.00
RFQ
IXFN48N60P

Datasheet

HiPerFET™, Polar SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 140mOhm @ 4A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8860 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN170N25X3

IXFN170N25X3

MOSFET N-CH 250V 170A SOT227B

Littelfuse Inc.

3,558 0.00
RFQ
IXFN170N25X3

Datasheet

HiPerFET™, Ultra X3 SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
APT17F120J

APT17F120J

MOSFET N-CH 1200V 18A ISOTOP

Microchip Technology

3,084 0.00
RFQ
APT17F120J

Datasheet

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 580mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
IXTN8N150L

IXTN8N150L

MOSFET N-CH 1500V 7.5A SOT-227B

Littelfuse Inc.

2,745 0.00
RFQ
IXTN8N150L

Datasheet

Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1500 V 7.5A (Tc) 20V 3.6Ohm @ 4A, 20V 8V @ 250µA 250 nC @ 15 V ±30V 8000 pF @ 25 V - 545W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
MSC025SMA120B4

MSC025SMA120B4

TRANS SJT N-CH 1200V 103A TO247

Microchip Technology

2,475 0.00
RFQ
MSC025SMA120B4

Datasheet

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 31mOhm @ 40A, 20V 2.8V @ 3mA 232 nC @ 20 V +23V, -10V 3020 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IXTN62N50L

IXTN62N50L

MOSFET N-CH 500V 62A SOT227B

IXYS

2,139 0.00
RFQ
IXTN62N50L

Datasheet

Linear SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 62A (Tc) 20V 100mOhm @ 500mA, 20V 5V @ 250µA 550 nC @ 20 V ±30V 11500 pF @ 25 V - 800W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXFN50N120SIC

IXFN50N120SIC

SICFET N-CH 1200V 47A SOT227B

IXYS

9,273 0.00
RFQ
IXFN50N120SIC

Datasheet

- SOT-227-4, miniBLOC Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A (Tc) 20V 50mOhm @ 40A, 20V 2.4V @ 10mA 100 nC @ 20 V +20V, -5V 1900 pF @ 1000 V - - -40°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
FBG10N05ASH

FBG10N05ASH

GAN FET HEMT 100V 5A 4FSMD-A

EPC Space, LLC

5,947 0.00
RFQ
FBG10N05ASH

Datasheet

eGaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 100 V 5A (Tc) 5V 45mOhm @ 5A, 5V 2.5V @ 1.2mA 2.2 nC @ 5 V +6V, -4V 233 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
FBG20N04ASH

FBG20N04ASH

GAN FET HEMT 200V 4A 4FSMD-A

EPC Space, LLC

7,918 0.00
RFQ
FBG20N04ASH

Datasheet

e-GaN® 4-SMD, No Lead Bulk Active N-Channel GaNFET (Gallium Nitride) 200 V 4A (Tc) 5V 130mOhm @ 4A, 5V 2.8V @ 1mA 3 nC @ 5 V +6V, -4V 150 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
IPS70R1K4P7SAKMA1

IPS70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies

3,749 0.00
RFQ
IPS70R1K4P7SAKMA1

Datasheet

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
TSM2N7002KCU

TSM2N7002KCU

60V, 0.24A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation

8,989 0.00
RFQ
TSM2N7002KCU

Datasheet

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 4.5V, 10V 2.5Ohm @ 240mA, 10V 2.5V @ 250µA 0.91 nC @ 4.5 V ±20V 30 pF @ 30 V - 298mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
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