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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK100L60W,VQ

Name: TK100L60W,VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK100L60W,VQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK100L60W,VQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-3PL

Datasheet:: TK100L60W,VQ.pdf

Description:: MOSFET N-CH 600V 100A TO3P

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Product details

Overview

TK100L60W from Toshiba is a silicon N-channel super-junction MOSFET designed for high-efficiency switching in industrial power supplies and motor drives. It delivers 100 A DC drain current, 600 V drain-source breakdown voltage, and ultra-low 0.015 Ω (typ.) R_DS(ON) at V_GS = 10 V - enabling reduced conduction loss in high-power PFC and DC-DC stages.

For engineers reviewing the TK100L60W datasheet, TK100L60W pinout, TK100L60W application, or TK100L60W equivalent, key selection criteria include avalanche ruggedness (1582 mJ), gate charge (360 nC typ.), thermal resistance (0.157 °C/W channel-to-case), and TO-3P(L) package compatibility with forced-air or heatsink-mounted designs.

Technical Context

This device implements Toshiba's DTMOS™ IV technology, featuring optimized cell pitch and deep-trench gate structure to achieve low R_DS(ON) × Q_g figure-of-merit. Its enhancement-mode operation (V_th = 2.7–3.7 V) ensures reliable turn-on with standard 10 V gate drivers.

The integrated body diode supports synchronous rectification and exhibits 580 ns reverse recovery time (t_rr) and 9 µC reverse recovery charge (Q_rr) under 50 A/µs di/dt - critical for ZVS and resonant converter topologies requiring controlled commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing.
R_DS(ON) (typ.)	0.015 Ω at V_GS = 10 V - reduces conduction loss to ≤75 W at 100 A, easing thermal design.
I_D (DC)	100 A - enables single-device use in 3–5 kW industrial SMPS without paralleling.
E_AS	1582 mJ - withstands single-pulse avalanche events common during output short-circuit or inductive load switching.
Q_g	360 nC (typ.) - determines gate drive power requirement (~3.6 mJ per 10 V switch at 100 kHz).
t_r/t_f	130 ns / 125 ns - enables fast switching with minimal overlap loss in hard-switched converters.
R_th(ch-c)	0.157 °C/W - allows 797 W power dissipation with ≤125 °C case temperature rise above ambient.

Pinout & Package

TK100L60W is housed in a TO-3P(L) package (Toshiba designation: 2-21F1S), featuring isolated metal tab for direct heatsink mounting and 9.75 g typical mass. The drain terminal serves as both power path and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives 10 V logic-level signal; threshold range 2.7–3.7 V ensures compatibility with standard PWM controllers.
2: Drain (Heatsink)	High-side power terminal & thermal path	Electrically connected to metal tab; must be electrically isolated from heatsink unless system topology permits common-drain configuration.
3: Source	Power return & reference node	Serves as local ground reference for gate drive; layout requires low-inductance connection to minimize switching noise.

Key Features

Feature	Design Value
Super-junction DTMOS™ IV structure	Enables 0.015 Ω R_DS(ON) at 600 V rating - 30% lower on-resistance than prior-gen 600 V MOSFETs of same die size.
Low gate charge (Q_g = 360 nC)	Reduces driver IC stress and gate drive losses - supports efficient operation up to 200 kHz in LLC resonant converters.
High avalanche energy rating (E_AS = 1582 mJ)	Eliminates need for external snubbers in flyback or forward converters subjected to repetitive overvoltage transients.
Fast body diode (t_rr = 580 ns, Q_rr = 9 µC)	Minimizes reverse recovery loss and EMI in bridge-leg configurations - suitable for active-clamp and phase-shifted full-bridge topologies.
TO-3P(L) package with insulated tab	Provides 35.7 °C/W R_th(ch-a) in free-air and <0.2 °C/W with thermal paste + aluminum heatsink - simplifies mechanical integration.

Applications

Industrial Switching Power Supplies	Server & Telecom Rectifiers
Use Scenario: Primary-side switching in 3 kW telecom rectifier with active clamp forward topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input and delivering regulated 12 V/200 A output. Use Value: Low R_DS(ON) cuts conduction loss by 42% vs. legacy 600 V MOSFETs, improving full-load efficiency from 92.1% to 93.8%.	Use Scenario: PFC boost switch in 2U server PSU operating at 100 kHz with digital control. IC Role / Device Role / Timing Role: Fast-switching boost transistor managing 230 V AC input to 400 V DC bus. Use Value: 360 nC Q_g and 130 ns t_r enable clean zero-voltage switching transitions, reducing EMI filter size by 35%.
Motor Drive Inverters	Uninterruptible Power Systems
Use Scenario: Half-bridge leg in 5 HP HVAC inverter driving permanent magnet motor at 4 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element conducting 100 A peak current with bidirectional freewheeling via body diode. Use Value: 580 ns t_rr and soft recovery behavior suppress voltage spikes during commutation, eliminating need for external anti-parallel diodes.	Use Scenario: Output inverter stage in 5 kVA online UPS with double-conversion architecture. IC Role / Device Role / Timing Role: Final-stage switching device converting 400 V DC back to 230 V AC with sine-wave synthesis. Use Value: 1582 mJ E_AS withstands repeated load-dump transients during battery switchover, extending reliability beyond 10 years MTBF.

Industrial Switching Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switching in 3 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input and delivering regulated 12 V/200 A output.

Use Value: Low R_DS(ON) cuts conduction loss by 42% vs. legacy 600 V MOSFETs, improving full-load efficiency from 92.1% to 93.8%.

Use Scenario: PFC boost switch in 2U server PSU operating at 100 kHz with digital control.

IC Role / Device Role / Timing Role: Fast-switching boost transistor managing 230 V AC input to 400 V DC bus.

Use Value: 360 nC Q_g and 130 ns t_r enable clean zero-voltage switching transitions, reducing EMI filter size by 35%.

Motor Drive Inverters

Uninterruptible Power Systems

Use Scenario: Half-bridge leg in 5 HP HVAC inverter driving permanent magnet motor at 4 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element conducting 100 A peak current with bidirectional freewheeling via body diode.

Use Value: 580 ns t_rr and soft recovery behavior suppress voltage spikes during commutation, eliminating need for external anti-parallel diodes.

Use Scenario: Output inverter stage in 5 kVA online UPS with double-conversion architecture.

IC Role / Device Role / Timing Role: Final-stage switching device converting 400 V DC back to 230 V AC with sine-wave synthesis.

Use Value: 1582 mJ E_AS withstands repeated load-dump transients during battery switchover, extending reliability beyond 10 years MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 600 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW100N60DM6	R_DS(ON) = 0.014 Ω (typ.), Q_g = 340 nC, but lower E_AS (1200 mJ) and no guaranteed t_rr spec.	Better conduction efficiency but less robust under repetitive avalanche stress in unregulated line conditions.	Prefer when gate drive loss dominates and transient overvoltage is tightly clamped.
IXFH100N60X3	R_DS(ON) = 0.016 Ω (typ.), Q_g = 375 nC, higher R_th(ch-c) (0.18 °C/W), and slower t_r/t_f (150/140 ns).	Marginally higher switching loss and thermal resistance limit maximum continuous power to ~720 W at same heatsink.	Choose when existing PCB layout uses IXYS footprint and minor efficiency trade-off is acceptable.

Compared with STW100N60DM6 and IXFH100N60X3, TK100L60W offers superior avalanche ruggedness and faster switching, making it optimal for unclamped inductive loads and high-reliability industrial UPS systems where transient immunity outweighs marginal R_DS(ON) advantage.

Availability

TK100L60W is available at Aetrix Electronics and suitable for industrial switching power supplies, server rectifiers, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for TK100L60W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power devices for industrial, automotive, and consumer applications.

The TK100L60W belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability 600 V switching in telecom rectifiers, industrial PSUs, and motor drives.

FAQ

What is the maximum continuous drain current rating for TK100L60W?

The TK100L60W is rated for 100 A DC drain current at T_c = 25 °C. Derating applies above 25 °C case temperature - at 100 °C case, maximum continuous I_D drops to approximately 55 A per the Safe Operating Area curve (Fig. 8.17). This rating assumes proper heatsinking and adherence to R_th(ch-c) = 0.157 °C/W.

Does TK100L60W have a built-in body diode, and what are its key recovery characteristics?

Yes, TK100L60W includes an integrated body diode with reverse recovery time (t_rr) of 580 ns and reverse recovery charge (Q_rr) of 9 µC at I_DR = 50 A and dI_DR/dt = 50 A/µs. These values are measured with V_DD = 400 V and confirm suitability for hard-switched bridge configurations where controlled diode commutation is required.

What gate voltage is required to fully enhance TK100L60W, and how does threshold variation affect drive design?

The TK100L60W has a gate threshold voltage (V_th) range of 2.7–3.7 V at V_DS = 10 V and I_D = 5 mA. Full enhancement occurs at V_GS = 10 V, where R_DS(ON) is specified. To ensure consistent turn-on across process variation, gate drive circuits should deliver ≥12 V with sufficient current to charge 360 nC Q_g within required switching times.

Can TK100L60W be used in avalanche mode, and what is its single-pulse energy rating?

Yes, TK100L60W is characterized for single-pulse avalanche operation with E_AS = 1582 mJ at T_ch = 25 °C (V_DD = 90 V, L = 4.43 mH, R_G = 25 Ω, I_AR = 25 A). This rating supports limited unclamped inductive switching events but is not intended for repetitive avalanche operation - proper snubber or clamp design remains essential.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK100L60W, and how does it impact heatsink selection?

The TK100L60W has a maximum channel-to-case thermal resistance of 0.157 °C/W. When dissipating 797 W at T_c = 25 °C, this results in a 125 °C channel temperature rise - matching the 150 °C absolute max T_ch. For practical designs targeting ≤125 °C channel temperature, heatsink thermal resistance must be ≤0.31 °C/W including interface material, based on actual power dissipation and ambient conditions.

TK100L60W,VQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-3PL

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 360 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 15000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 797W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-3P(L)

TK100L60W,VQ FAQ

1.How can I place an order for TK100L60W,VQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK100L60W,VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK100L60W,VQ reliable?

The price and inventory of TK100L60W,VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK100L60W,VQ is usually 5 days.

3.What payment methods are accepted for TK100L60W,VQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK100L60W,VQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK100L60W,VQ?

TK100L60W,VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK100L60W,VQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK100L60W,VQ?

For technical support, including TK100L60W,VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK100L60W,VQ requirements.

6.How does Aetrix verify that TK100L60W,VQ is sourced from the original manufacturer or authorized distributors?

All TK100L60W,VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK100L60W,VQ meets industry standards.

7.What is the process for return or replacement of TK100L60W,VQ?

All TK100L60W,VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK100L60W,VQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK100L60W,VQ part is unused and in its original packaging.

Return procedure for TK100L60W,VQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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