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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
SIHG22N60E-E3 MOSFET N-CH 600V 21A TO247AC Vishay Siliconix	12	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	86 nC @ 10 V	±30V	1920 pF @ 100 V	-	227W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
STL33N65M2 MOSFET N-CH 650V 20A PWRFLAT HV STMicroelectronics	6,529	RFQ	Datasheet	MDmesh™	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	154mOhm @ 10A, 10V	4V @ 250µA	41.5 nC @ 10 V	±25V	1790 pF @ 100 V	-	150W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerFlat™ (8x8) HV
R6020ENZC17 MOSFET N-CH 600V 20A TO3PF Rohm Semiconductor	3,846	RFQ	Datasheet	-	TO-3P-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	196mOhm @ 9.5A, 10V	4V @ 1mA	60 nC @ 10 V	±20V	1400 pF @ 25 V	-	120W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3PF
IXTA62N15P MOSFET N-CH 150V 62A TO263 Littelfuse Inc.	5,645	RFQ	Datasheet	Polar	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	62A (Tc)	10V	40mOhm @ 31A, 10V	5.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	350W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA
TK39N60W,S1VF MOSFET N CH 600V 38.8A TO247 Toshiba Semiconductor and Storage	20	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	38.8A (Ta)	10V	65mOhm @ 19.4A, 10V	3.7V @ 1.9mA	110 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
IXTH22N50P MOSFET N-CH 500V 22A TO247 IXYS	20	RFQ	Datasheet	Polar	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	22A (Tc)	10V	270mOhm @ 11A, 10V	5.5V @ 250µA	50 nC @ 10 V	±30V	2630 pF @ 25 V	-	350W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)
IXTQ130N10T MOSFET N-CH 100V 130A TO3P Littelfuse Inc.	6,685	RFQ	Datasheet	Trench	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	130A (Tc)	10V	9.1mOhm @ 25A, 10V	4.5V @ 250µA	104 nC @ 10 V	±20V	5080 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P
IXTA1R6N100D2HV MOSFET N-CH 1000V 1.6A TO263HV Littelfuse Inc.	6,490	RFQ	Datasheet	Depletion	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	1.6A (Tj)	0V	10Ohm @ 800mA, 0V	4.5V @ 100µA	27 nC @ 5 V	±20V	645 pF @ 10 V	-	100W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV
STW11NM80 MOSFET N-CH 800V 11A TO247-3 STMicroelectronics	2,397	RFQ	Datasheet	MDmesh™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	11A (Tc)	10V	400mOhm @ 5.5A, 10V	5V @ 250µA	43.6 nC @ 10 V	±30V	1630 pF @ 25 V	-	150W (Tc)	-65°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3
NVMTS1D2N08H MOSFET N-CH 80V 43.5A/337A 8DFNW onsemi	6,515	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	43.5A (Ta), 337A (Tc)	10V	1.1mOhm @ 90A, 10V	4V @ 590µA	147 nC @ 10 V	±20V	10100 pF @ 40 V	-	5W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-DFNW (8.3x8.4)
APT37F50B MOSFET N-CH 500V 37A TO247 Microchip Technology	8	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	37A (Tc)	10V	150mOhm @ 18A, 10V	5V @ 1mA	145 nC @ 10 V	±30V	5710 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
STF57N65M5 MOSFET N-CH 650V 42A TO220FP STMicroelectronics	7,384	RFQ	Datasheet	MDmesh™ V	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	42A (Tc)	10V	63mOhm @ 21A, 10V	5V @ 250µA	98 nC @ 10 V	±25V	4200 pF @ 100 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
IXTA3N100D2HV MOSFET N-CH 1000V 3A TO263HV Littelfuse Inc.	7,375	RFQ	Datasheet	Depletion	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1000 V	3A (Tj)	0V	6Ohm @ 1.5A, 0V	4.5V @ 250µA	37.5 nC @ 5 V	±20V	1020 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV
IXFH28N60P3 MOSFET N-CH 600V 28A TO247AD Littelfuse Inc.	3	RFQ	Datasheet	HiPerFET™, Polar3™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	260mOhm @ 14A, 10V	5V @ 2.5mA	50 nC @ 10 V	±30V	3560 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD (IXFH)
R6020PNJFRATL MOSFET N-CH 600V 20A LPTS Rohm Semiconductor	4,724	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Tc)	10V	250mOhm @ 10A, 10V	4.5V @ 1mA	65 nC @ 10 V	±30V	2040 pF @ 25 V	-	304W (Tc)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	LPTS
IPW65R065C7XKSA1 MOSFET N-CH 650V 33A TO247-3 Infineon Technologies	7,494	RFQ	Datasheet	CoolMOS™ C7	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	65mOhm @ 17.1A, 10V	4V @ 850µA	64 nC @ 10 V	±20V	3020 pF @ 400 V	-	171W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3
APT14F100B MOSFET N-CH 1000V 14A TO247 Microchip Technology	17	RFQ	Datasheet	POWER MOS 8™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	14A (Tc)	10V	980mOhm @ 7A, 10V	5V @ 1mA	120 nC @ 10 V	±30V	3965 pF @ 25 V	-	500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 [B]
TK065N65Z,S1F MOSFET N-CH 650V 38A TO247 Toshiba Semiconductor and Storage	19	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	38A (Ta)	10V	65mOhm @ 19A, 10V	4V @ 1.69mA	62 nC @ 10 V	±30V	3650 pF @ 300 V	-	270W (Tc)	150°C	-	-	Through Hole	TO-247
SIHG40N60E-GE3 MOSFET N-CH 600V 40A TO247AC Vishay Siliconix	5,299	RFQ	Datasheet	E	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	75mOhm @ 20A, 10V	4V @ 250µA	197 nC @ 10 V	±30V	4436 pF @ 100 V	-	329W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC
IMZ120R140M1HXKSA1 SICFET N-CH 1.2KV 19A TO247-4 Infineon Technologies	22	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V, 18V	182mOhm @ 6A, 18V	5.7V @ 2.5mA	13 nC @ 18 V	+23V, -7V	454 pF @ 800 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-1

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