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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZ120R140M1HXKSA1

Name: IMZ120R140M1HXKSA1
Brand: Infineon Technologies
SKU: IMZ120R140M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZ120R140M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZ120R140M1HXKSA1.pdf

Description:: SICFET N-CH 1.2KV 19A TO247-4

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Product details

Overview

IMZ120R140M1HXKSA1 from Infineon is a 1200V, 19A silicon carbide trench MOSFET in PG-TO247-4 package with 140mΩ R_DS(on) at 25°C, 4.5V gate threshold voltage, and integrated source sense pin for optimized switching. It delivers low switching losses (E_on = 62µJ, E_off = 12µJ @ 25°C), robust body diode operation, and operates up to 175°C junction temperature-used in solar string inverters and industrial UPS power stages.

For engineers reviewing the IMZ120R140M1HXKSA1 datasheet, IMZ120R140M1HXKSA1 pinout, IMZ120R140M1HXKSA1 application, or IMZ120R140M1HXKSA1 equivalent, key selection factors include its 1200V blocking capability, 4-pin Kelvin-source configuration, temperature-independent turn-off losses, and qualification for industrial environments per JEDEC 47/20/22.

Technical Context

This SiC MOSFET employs a trench-gate structure enabling high channel density and low R_DS(on), with a benchmark V_GS(th) of 4.5V and zero-volt turn-off gate drive compatibility. Its fully controllable dV/dt and robust body diode support hard commutation without external freewheeling diodes.

The device features separate source (Pin 2) and sense (Pin 3) terminals to eliminate source inductance impact on gate control, ensuring stable switching performance across temperature. Thermal resistance R_th(j-c) is 1.2–1.6 K/W, supporting high-power-density designs in constrained thermal environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200V - supports DC-link voltages up to 1000V in three-phase rectifier or two-level inverter topologies
R_DS(on)	140mΩ @ 25°C - enables low conduction loss at 19A continuous drain current
V_GS(th)	4.5V typ - provides clear logic-level gate drive margin and reduces risk of spurious turn-on
E_on/E_off	62µJ / 12µJ @ 25°C - enables >100kHz switching in high-efficiency SMPS and solar inverters
T_vj,max	175°C - allows operation in high-ambient industrial environments without derating
Q_G	13nC - reduces gate driver power requirement and simplifies gate loop layout
C_iss/C_oss	454pF / 25pF - supports fast, low-loss hard-switching with minimal capacitive charge loss

Pinout & Package

Package: PG-TO247-4 - thermally enhanced 4-pin through-hole package with isolated Kelvin source connection for precise gate control and reduced switching oscillation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main power drain terminal	High-side switching node connection; carries full load current and withstands 1200V DC
Pin 2 (Source)	Power source return path	Carries load current to ground; used for current sensing and thermal monitoring
Pin 3 (Sense)	Kelvin source reference	Provides gate driver feedback path independent of power source inductance, stabilizing V_GS during switching
Pin 4 (Gate)	Control input	Receives 0–18V gate drive signal; designed for low-impedance gate loop routing

Key Features

Feature	Design Value
Threshold-free on-state characteristic	Eliminates subthreshold conduction loss and ensures predictable R_DS(on) behavior across temperature
0V turn-off gate voltage	Enables simple, single-rail gate drivers without negative bias circuitry
Fully controllable dV/dt	Reduces EMI generation and eliminates need for external snubbers in hard-switched converters
Robust body diode for hard commutation	Supports bidirectional current flow in LLC resonant and totem-pole PFC without external diode
Temperature-independent turn-off losses	Maintains consistent E_off from 25°C to 175°C, simplifying thermal design and system efficiency modeling

Applications

Solar String Inverter

Industrial UPS

Use Scenario: High-voltage DC-to-AC conversion in photovoltaic systems with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Main switching device in 3-level NPC or T-type inverter leg handling 1000V DC bus and 50–100kHz PWM.

Use Value: 140mΩ R_DS(on) and low E_on/E_off enable >99% peak efficiency and reduce heatsink volume by 35% vs. Si IGBTs.

Use Scenario: Online double-conversion UPS delivering clean 230V AC output during utility failure with <5ms transfer time.

IC Role / Device Role / Timing Role: Bidirectional switch in high-frequency inverter stage operating at 40–80kHz with soft-charging pre-bias.

Use Value: Robust body diode and hard-commutation capability eliminate anti-parallel diode, reducing BOM count and PCB area.

Industrial SMPS

EV DC Fast Charger

Use Scenario: 3kW+ server-grade power supply with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch managing 800V DC input and synchronous rectification control timing.

Use Value: 175°C T_vj,max and low C_oss allow compact planar magnetics and air-cooled design without forced convection.

Use Scenario: Secondary-side isolation stage in 150kW+ liquid-cooled EV charging modules converting 1000V DC to battery voltage.

IC Role / Device Role / Timing Role: High-efficiency switching element in dual-active-bridge (DAB) isolated DC/DC converter.

Use Value: Sense pin enables accurate gate control under high di/dt, maintaining ZVS over full load range and improving reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1200V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N140S5	140mΩ R_DS(on), but 1200V rating with higher Q_G (17nC) and no Kelvin source pin	Lacks sense pin; requires careful gate loop layout to avoid oscillation in >50kHz designs	Preferred where cost sensitivity outweighs gate control precision and layout complexity is manageable
C3M0140120K	140mΩ R_DS(on), TO247-4L package, but V_GS(th) = 2.5V (lower noise immunity)	Lower threshold increases risk of false turn-on in noisy industrial environments	Selected when gate driver supports tighter V_GS tolerance and system EMI filtering is robust

Compared with STP120N140S5 and C3M0140120K, IMZ120R140M1HXKSA1 offers superior gate control stability via Kelvin source, higher V_GS(th) margin, and JEDEC-qualified industrial reliability-making it optimal for mission-critical, high-frequency, and thermally constrained applications.

Availability

IMZ120R140M1HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and EV DC fast charger power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IMZ120R140M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies for industrial and automotive markets.

This part belongs to the CoolSiC™ 1200V trench MOSFET product line, engineered specifically for high-efficiency, high-power-density systems operating above 40kHz in renewable energy and industrial power conversion.

FAQ

What is the purpose of the sense pin (Pin 3) on IMZ120R140M1HXKSA1?

The sense pin (Pin 3) provides a Kelvin connection to the source, isolating gate drive feedback from high-current source paths. This eliminates voltage drop-induced gate control errors during fast switching, ensuring stable V_GS regulation and preventing oscillation-even under high di/dt conditions typical in 100kHz+ converters.

Can IMZ120R140M1HXKSA1 be driven with a standard 15V gate driver without negative bias?

Yes. Its 0V turn-off gate voltage specification and 4.5V V_GS(th) allow reliable operation using only a single positive rail (e.g., 0V/15V or 0V/18V). No negative bias is required, simplifying driver design and reducing component count versus devices needing –5V turn-off.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode supports hard commutation with Q_rr = 100nC (25°C) and Irrm = 2A, eliminating need for external anti-parallel diodes in totem-pole PFC or bidirectional converters. While slower than dedicated SiC Schottky diodes, its ruggedness and co-packaged thermal coupling improve system reliability and reduce layout complexity.

Is IMZ120R140M1HXKSA1 qualified for automotive applications?

No. It is qualified for industrial applications per JEDEC 47/20/22 standards-not AEC-Q101. For automotive use, Infineon's CoolSiC™ Automotive series (e.g., IMZA120R140M1H) provides extended temperature range, enhanced EMC robustness, and full AEC-Q101 qualification including HTGB and UHAST testing.

IMZ120R140M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 182mOhm @ 6A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 454 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-1

IMZ120R140M1HXKSA1 FAQ

1.How can I place an order for IMZ120R140M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZ120R140M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZ120R140M1HXKSA1 reliable?

The price and inventory of IMZ120R140M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZ120R140M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZ120R140M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZ120R140M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZ120R140M1HXKSA1?

IMZ120R140M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZ120R140M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZ120R140M1HXKSA1?

For technical support, including IMZ120R140M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZ120R140M1HXKSA1 requirements.

6.How does Aetrix verify that IMZ120R140M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZ120R140M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZ120R140M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZ120R140M1HXKSA1?

All IMZ120R140M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZ120R140M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZ120R140M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZ120R140M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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