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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG22N60E-E3

Name: SIHG22N60E-E3
Brand: Vishay Siliconix
SKU: SIHG22N60E-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG22N60E-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG22N60E-E3.pdf

Description:: MOSFET N-CH 600V 21A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SIHG22N60E-E3 from Vishay Siliconix is a 600 V, 21 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring R_DS(on) = 0.18 Ω at V_GS = 10 V, Q_g = 86 nC, and avalanche-rated (E_AS = 367 mJ). It delivers low conduction and switching losses for high-efficiency power conversion in PFC and SMPS stages.

For engineers reviewing the SIHG22N60E-E3 datasheet, SIHG22N60E-E3 pinout, SIHG22N60E-E3 application, or SIHG22N60E-E3 equivalent, key selection criteria include its 600 V blocking voltage, 0.18 Ω on-resistance at 10 V gate drive, 86 nC total gate charge, TO-247AC thermal performance (R_thJC = 0.55 °C/W), and unclamped inductive switching capability.

Technical Context

This E-series MOSFET uses planar VDMOS technology optimized for hard-switched and resonant topologies. Its low C_iss (1920 pF) and ultra-low Q_gd/Q_g ratio (24/86 ≈ 28%) reduce Miller-induced turn-off delay and improve controllability during fast transitions.

The device integrates an intrinsic body diode with t_rr = 344 ns and Q_rr = 5.3 μC at 25 °C, enabling moderate-frequency freewheeling in bridge configurations. Its dV/dt immunity of 70 V/ns at T_J = 125 °C supports stable operation in noisy high-voltage environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50% safety margin for transient overvoltage
R_DS(on) max	0.18 Ω at V_GS = 10 V - Enables ≤3.9 W conduction loss at 11 A continuous drain current
Q_g max	86 nC - Determines gate driver power requirement and switching speed in 100–500 kHz PFC stages
E_AS	367 mJ - Qualifies for robust unclamped inductive switching in motor drives and welders
R_thJC	0.55 °C/W - Allows 227 W dissipation with ≤125 °C junction rise above 25 °C case temperature
I_D cont	21 A at T_C = 25 °C - Sustains full load in 500–1000 W server PSU primary switches
C_iss	1920 pF - Sets input impedance and gate drive loop stability requirements in high-frequency SMPS

Pinout & Package

SIHG22N60E-E3 is housed in a TO-247AC package with isolated tab (Drain-connected), optimized for high-voltage isolation and thermal transfer to heatsinks. The plastic body meets JEDEC TO-247 AC outline with 20.55 mm width, 15.25 mm height, and 4.5 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control terminal requiring <100 nA leakage; drives 86 nC charge into 0.77 Ω internal gate resistance
2 (Tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance return path
3 (Lead)	Source	Power return and reference node for gate drive; carries full 21 A continuous current and reverse diode recovery charge

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.5 Ω·nC - Reduces combined conduction + switching loss tradeoff in 65–300 kHz PFC circuits
Avalanche energy rating	367 mJ single-pulse - Eliminates need for external snubbers in inductive load switching
Ultra-low Q_gd	24 nC - Minimizes Miller plateau duration and improves dV/dt immunity during turn-off
Body diode t_rr	344 ns - Enables reliable commutation in half-bridge and LLC resonant converters up to 200 kHz
Lead (Pb)-free & Halogen-free	E3 suffix - Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material definitions

Applications

Server Power Supplies	Telecom Rectifiers
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server PSUs with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–300 kHz with synchronous rectification. Use Value: 0.18 Ω R_DS(on) and 86 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on standard heatsinks.	Use Scenario: Boost PFC stage in -48 V telecom rectifier systems delivering 3 kW output with universal AC input. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65–120 kHz. Use Value: Low C_iss (1920 pF) and controlled Q_gd/Q_g ratio ensure stable zero-current switching and minimal EMI generation.
Solar Inverters	Industrial Motor Drives
Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 V) to grid-synchronized AC. IC Role / Device Role / Timing Role: IGBT replacement in three-phase inverter legs, operating with 16 kHz PWM and field-oriented control. Use Value: 367 mJ E_AS rating withstands inductive kickback during fault conditions without desaturation protection circuitry.	Use Scenario: Inverter output stage in 5–10 HP variable frequency drives for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Half-bridge leg switch controlling motor phase current with 2–8 kHz carrier frequency. Use Value: TO-247AC package and 0.55 °C/W R_thJC support sustained 21 A operation at 100 °C case temperature in enclosed cabinets.

Server Power Supplies

Telecom Rectifiers

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server PSUs with active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC bus, switching at 100–300 kHz with synchronous rectification.

Use Value: 0.18 Ω R_DS(on) and 86 nC Q_g enable >96% efficiency at full load while maintaining thermal margin on standard heatsinks.

Use Scenario: Boost PFC stage in -48 V telecom rectifier systems delivering 3 kW output with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65–120 kHz.

Use Value: Low C_iss (1920 pF) and controlled Q_gd/Q_g ratio ensure stable zero-current switching and minimal EMI generation.

Solar Inverters

Industrial Motor Drives

Use Scenario: DC-link switching in string inverters converting PV array output (600–1000 V) to grid-synchronized AC.

IC Role / Device Role / Timing Role: IGBT replacement in three-phase inverter legs, operating with 16 kHz PWM and field-oriented control.

Use Value: 367 mJ E_AS rating withstands inductive kickback during fault conditions without desaturation protection circuitry.

Use Scenario: Inverter output stage in 5–10 HP variable frequency drives for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Half-bridge leg switch controlling motor phase current with 2–8 kHz carrier frequency.

Use Value: TO-247AC package and 0.55 °C/W R_thJC support sustained 21 A operation at 100 °C case temperature in enclosed cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW22NM60ND	600 V, 20 A, R_DS(on) = 0.22 Ω, Q_g = 75 nC, D²PAK package	Lower gate charge but higher on-resistance and surface-mount packaging limits thermal headroom	Prefer for space-constrained designs where PCB area is critical and peak power < 600 W
IXFH20N60P	600 V, 20 A, R_DS(on) = 0.24 Ω, Q_g = 95 nC, TO-247 package	Higher Q_g increases driver loss; same package but lower avalanche rating (E_AS = 270 mJ)	Acceptable for non-avalanche-critical SMPS where cost sensitivity outweighs ruggedness needs

Compared with STW22NM60ND and IXFH20N60P, SIHG22N60E-E3 offers the lowest R_DS(on) × Q_g figure-of-merit (15.5 Ω·nC), highest E_AS, and superior thermal resistance-making it optimal for thermally demanding, high-reliability 600 V power stages.

Availability

SIHG22N60E-E3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverters requiring stable component supply across multi-year production cycles.

Supply support for SIHG22N60E-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-emphasizing low FOM, rugged avalanche capability, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHG22N60E-E3 at 100 °C case temperature?

The SIHG22N60E-E3 supports 13 A continuous drain current at T_C = 100 °C, derated linearly from 21 A at 25 °C using a 1.8 W/°C derating factor. This value reflects thermal limits under real-world heatsink conditions and must be validated against actual board layout and airflow in the target application. SIHG22N60E-E3 maintains R_DS(on) stability up to 150 °C junction temperature.

Does SIHG22N60E-E3 have a fully rated avalanche capability, and what test conditions apply?

Yes, SIHG22N60E-E3 is fully rated for single-pulse avalanche energy (E_AS) at 367 mJ, tested per JEDEC JESD24-1 with V_DD = 50 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 5.1 A. This rating ensures survivability during inductive turn-off transients without external clamping. SIHG22N60E-E3 does not specify repetitive avalanche capability.

What is the gate threshold voltage range for SIHG22N60E-E3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SIHG22N60E-E3 is specified from 2 V to 4 V at T_J = 25 °C. This range requires gate drive voltages ≥10 V to ensure full enhancement and low R_DS(on); logic-level drivers (≤5 V) are insufficient. SIHG22N60E-E3 exhibits minimal V_GS(th) drift over temperature, supporting stable operation from -55 °C to +150 °C.

How does the body diode performance of SIHG22N60E-E3 compare to standard FRDs in PFC applications?

SIHG22N60E-E3's body diode has t_rr = 344 ns and Q_rr = 5.3 μC at 25 °C, which is slower and higher-charge than dedicated fast recovery diodes-but sufficient for CCM PFC operation below 150 kHz. Its V_SD = 1.2 V at 11 A enables low forward loss during light-load freewheeling. SIHG22N60E-E3 body diode is not optimized for ZVS or high-frequency synchronous rectification.

Is SIHG22N60E-E3 compatible with standard TO-247 heatsinks, and what is the thermal pad configuration?

Yes, SIHG22N60E-E3 uses JEDEC-standard TO-247AC outline with a flat, uninsulated metal tab (Drain-connected) measuring 16.76 mm × 14.02 mm, designed for direct mechanical and thermal contact to heatsinks. No thermal pad modification is required; standard mounting hardware and thermal interface materials apply. SIHG22N60E-E3 achieves R_thJC = 0.55 °C/W when mounted per Vishay's recommended torque and surface finish specifications.

SIHG22N60E-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1920 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG22N60E-E3 FAQ

1.How can I place an order for SIHG22N60E-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG22N60E-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG22N60E-E3 reliable?

The price and inventory of SIHG22N60E-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG22N60E-E3 is usually 5 days.

3.What payment methods are accepted for SIHG22N60E-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG22N60E-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG22N60E-E3?

SIHG22N60E-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG22N60E-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG22N60E-E3?

For technical support, including SIHG22N60E-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG22N60E-E3 requirements.

6.How does Aetrix verify that SIHG22N60E-E3 is sourced from the original manufacturer or authorized distributors?

All SIHG22N60E-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG22N60E-E3 meets industry standards.

7.What is the process for return or replacement of SIHG22N60E-E3?

All SIHG22N60E-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG22N60E-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG22N60E-E3 part is unused and in its original packaging.

Return procedure for SIHG22N60E-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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