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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology APT14F100B

Name: APT14F100B
Brand: Microchip Technology
SKU: APT14F100B
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: APT14F100B

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: APT14F100B.pdf

Description:: MOSFET N-CH 1000V 14A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

APT14F100B from Microchip Technology is a 1000 V, 14 A N-channel Power MOS 8™ FREDFET with 0.98 Ω maximum R_DS(on) at 25°C, optimized for high-frequency hard/soft-switching in PFC and solar inverters. It features fast recovery body diode, low EMI, and avalanche-energy rating.

For engineers reviewing the APT14F100B datasheet, APT14F100B pinout, APT14F100B application, or APT14F100B equivalent, this page delivers verified package mapping (TO-247), confirmed body-diode recovery performance, thermal resistance (R_θJC = 1.2°C/W), gate charge (Q_g = 42 nC), and direct alternative options for ZVS-capable 1000 V switching designs.

Technical Context

The APT14F100B belongs to Microchip's Power MOS 8™ FREDFET family, engineered specifically for high-voltage (>500W), high-frequency (≥100 kHz) applications requiring commutation dv/dt ruggedness. Its intrinsic body diode exhibits fast recovery (t_rr = 120 ns typical) and reduced minority carrier lifetime versus standard MOSFETs.

It operates with V_GS = ±30 V max, supports gate drive voltages of 10–20 V, and is rated for 100% UIS capability per JEDEC JESD24-1. The device uses Microchip's self-aligned aluminum gate structure to minimize series gate resistance (<0.15 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	1000 V - Withstands DC bus transients up to 1000 V in boost PFC or inverter half-bridges.
R_DS(on) max @ 25°C	0.98 Ω - Enables <1.4 W conduction loss at 14 A continuous drain current (T_C = 125°C).
I_D cont @ T_C = 125°C	14 A - Sustains full-rated current with standard heatsinking in TO-247 package.
Q_g	42 nC - Reduces gate driver power requirement and enables efficient 100–300 kHz switching.
t_rr (body diode)	120 ns typical - Supports reliable zero-voltage switching in resonant topologies without external snubbers.
R_θJC	1.2°C/W - Allows direct thermal interface to heatsink; junction-to-case path optimized for pulsed and DC SOA.
E_AS	320 mJ - Rated for unclamped inductive switching events common in motor drives and UPS systems.

Pinout & Package

APT14F100B is housed in a TO-247 package with isolated tab (non-insulated). The case is electrically connected to the Drain terminal, requiring appropriate isolation in PCB layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits.
Source	Return path for load current	Low-inductance connection critical for minimizing switching oscillation and EMI in high-dv/dt operation.
Gate	Control electrode	Requires 10–20 V drive; sensitive to ringing-layout must minimize loop inductance and include gate resistor (10–47 Ω typical).

Key Features

Feature	Design Value
Fast-recovery body diode	Enables ZVS operation in LLC and phase-shifted full-bridge converters without external diode replacement.
Low EMI switching	Optimized C_iss/C_rss ratio reduces voltage overshoot and radiated emissions in >100 kHz PFC stages.
Avalanche-energy rated	Guarantees robustness during transient overvoltage events in industrial motor control and UPS hold-up circuits.
Quiet switching architecture	Stable parallel operation without current imbalance-validated for multi-device paralleling in high-power inverters.
Self-aligned aluminum gate	Lowers internal gate resistance by >5× vs. polysilicon-gate competitors, improving dV/dt immunity and turn-off speed.

Applications

Power Factor Correction (PFC)	Solar Inverters
Use Scenario: Boost PFC stage in 3–5 kW telecom rectifiers operating at 100–200 kHz. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles full AC line rectified current. Use Value: Fast body diode eliminates need for external SiC Schottky anti-parallel diode, reducing BOM count and layout area.	Use Scenario: DC-DC stage of string inverters converting 600–1000 V PV input to intermediate bus. IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) topology; subjected to bidirectional hard-switching stress. Use Value: 1000 V rating and 120 ns t_rr enable reliable operation under high dv/dt (≥50 V/ns) without shoot-through risk.
Induction Heating	Server Power Supplies
Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coils in industrial heating systems. IC Role / Device Role / Timing Role: Low-side switch handling high RMS current and repetitive avalanche stress during zero-current switching transitions. Use Value: 320 mJ E_AS rating ensures survival across thousands of daily thermal cycles without degradation.	Use Scenario: Totem-pole PFC front-end in 3 kW AI server PSUs operating at 250 kHz. IC Role / Device Role / Timing Role: High-frequency switching element where low Q_g (42 nC) minimizes gate drive losses and thermal loading. Use Value: 0.98 Ω R_DS(on) maintains <1.5% conduction loss at full load while enabling compact magnetics design.

Power Factor Correction (PFC)

Solar Inverters

Use Scenario: Boost PFC stage in 3–5 kW telecom rectifiers operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles full AC line rectified current.

Use Value: Fast body diode eliminates need for external SiC Schottky anti-parallel diode, reducing BOM count and layout area.

Use Scenario: DC-DC stage of string inverters converting 600–1000 V PV input to intermediate bus.

IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) topology; subjected to bidirectional hard-switching stress.

Use Value: 1000 V rating and 120 ns t_rr enable reliable operation under high dv/dt (≥50 V/ns) without shoot-through risk.

Induction Heating

Server Power Supplies

Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coils in industrial heating systems.

IC Role / Device Role / Timing Role: Low-side switch handling high RMS current and repetitive avalanche stress during zero-current switching transitions.

Use Value: 320 mJ E_AS rating ensures survival across thousands of daily thermal cycles without degradation.

Use Scenario: Totem-pole PFC front-end in 3 kW AI server PSUs operating at 250 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element where low Q_g (42 nC) minimizes gate drive losses and thermal loading.

Use Value: 0.98 Ω R_DS(on) maintains <1.5% conduction loss at full load while enabling compact magnetics design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar FREDFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
APT14M100B	MOSFET variant (no fast body diode); identical R_DS(on), V_BR, package, and gate drive specs.	Not suitable for ZVS or bidirectional conduction; requires external anti-parallel diode in resonant topologies.	Select when body diode recovery is irrelevant and cost optimization is prioritized.
APT17F100B	Higher I_D (17 A), lower R_DS(on) (0.78 Ω), same 1000 V rating and FREDFET structure.	Delivers ~20% lower conduction loss at 14 A; requires marginally larger heatsink due to higher power density.	Choose for upgraded efficiency in space-constrained 4–6 kW PFC designs where thermal headroom allows.

Compared with APT14F100B, APT14M100B removes body-diode functionality to reduce cost but forfeits ZVS capability, while APT17F100B trades slightly higher gate charge (48 nC) for significantly lower R_DS(on)-making it optimal for thermally limited, high-efficiency deployments.

Availability

APT14F100B is available at Aetrix Electronics and suitable for power factor correction, solar inverters, and induction heating applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for APT14F100B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company delivering smart, connected, and secure embedded control solutions with broad analog, mixed-signal, and power portfolio coverage.

The APT14F100B belongs to the Power MOS 8™ FREDFET product line, designed specifically for high-frequency, high-voltage (>500W) switching applications demanding low EMI, fast body-diode recovery, and avalanche ruggedness.

FAQ

What is the maximum continuous drain current rating for APT14F100B at 125°C case temperature?

The APT14F100B is rated for 14 A continuous drain current (I_D) at T_C = 125°C, as specified in Microchip's official datasheet. This rating assumes proper heatsinking via the TO-247 drain tab and accounts for R_DS(on) increase with junction temperature. Derating is required above 125°C case temperature.

Does APT14F100B have an integrated fast-recovery body diode, and what is its typical reverse recovery time?

Yes, APT14F100B is a FREDFET with an integrated fast-recovery body diode. Its typical reverse recovery time (t_rr) is 120 ns at I_F = 14 A, T_J = 125°C, and di/dt = 100 A/µs. This enables reliable zero-voltage switching in resonant converters without external diode supplementation.

What gate drive voltage range is recommended for reliable operation of APT14F100B?

APT14F100B is characterized for gate drive voltages between 10 V and 20 V. A minimum V_GS of 10 V ensures full enhancement and low R_DS(on); maximum V_GS is ±30 V. Operating below 10 V risks incomplete turn-on and excessive conduction loss, while exceeding 20 V provides diminishing returns on R_DS(on) reduction.

Is APT14F100B suitable for paralleling in high-power designs, and what layout considerations apply?

Yes, APT14F100B is validated for stable paralleling due to its "quiet switching" architecture and matched threshold voltage distribution. Layout requires symmetrical gate drive paths with individual gate resistors (10–22 Ω), Kelvin source connections, and balanced power loop inductance to prevent dynamic current imbalance.

What is the junction-to-case thermal resistance (R_θJC) of APT14F100B, and how does it impact heatsink selection?

The APT14F100B has a junction-to-case thermal resistance (R_θJC) of 1.2°C/W. This value directly determines the minimum heatsink thermal resistance needed to maintain T_J ≤ 150°C under worst-case power dissipation. For example, at 14 A and 0.98 Ω R_DS(on), P_D ≈ 1.9 W → heatsink + interface must limit ΔT to ≤ 180°C for safe operation.

APT14F100B Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: POWER MOS 8™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 980mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3965 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 [B]

APT14F100B FAQ

1.How can I place an order for APT14F100B through Aetrix?

Please submit a Request for Quotation (RFQ) for APT14F100B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for APT14F100B reliable?

The price and inventory of APT14F100B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for APT14F100B is usually 5 days.

3.What payment methods are accepted for APT14F100B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for APT14F100B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for APT14F100B?

APT14F100B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your APT14F100B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for APT14F100B?

For technical support, including APT14F100B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your APT14F100B requirements.

6.How does Aetrix verify that APT14F100B is sourced from the original manufacturer or authorized distributors?

All APT14F100B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that APT14F100B meets industry standards.

7.What is the process for return or replacement of APT14F100B?

All APT14F100B units undergo pre-shipment inspection (PSI). If there is an issue with APT14F100B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The APT14F100B part is unused and in its original packaging.

Return procedure for APT14F100B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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