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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK39N60W,S1VF

Name: TK39N60W,S1VF
Brand: Toshiba Semiconductor and Storage
SKU: TK39N60W,S1VF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK39N60W,S1VF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK39N60W,S1VF.pdf

Description:: MOSFET N CH 600V 38.8A TO247

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Product details

Overview

TK39N60W,S1VF from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, rated for 600 V drain-source voltage and 38.8 A continuous drain current at T_c = 25 °C, with typ. R_DS(ON) = 0.055 Ω at V_GS = 10 V. It serves as a high-efficiency primary-side switching device in offline AC-DC power supplies and resonant DC-DC converters.

For engineers reviewing the TK39N60W,S1VF datasheet, TK39N60W,S1VF pinout, TK39N60W,S1VF application, or TK39N60W,S1VF equivalent, key selection considerations include its 600 V blocking capability, low gate charge (Q_g = 110 nC), avalanche ruggedness (E_AS = 608 mJ), TO-247 package thermal performance (R_th(ch-c) = 0.463 °C/W), and diode reverse recovery characteristics (t_rr = 450 ns).

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV super-junction structure to achieve low R_DS(ON) while maintaining high voltage capability and fast switching. Its enhancement-mode operation (V_th = 2.7–3.7 V) enables direct drive from standard 10 V gate drivers without level-shifting.

The integrated body diode features controlled reverse recovery (Q_rr = 5 µC, t_rr = 450 ns) and dv/dt ruggedness ≥15 V/ns, supporting ZVS and quasi-resonant topologies. Thermal design is enabled by the TO-247 package's low channel-to-case resistance (0.463 °C/W) and 270 W power dissipation rating at T_c = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports universal-input offline SMPS designs up to 400 V DC bus with margin.
R_DS(ON) (typ.)	0.055 Ω at V_GS = 10 V - Enables <1.5 W conduction loss at 19.4 A, critical for high-efficiency PFC stages.
I_D (DC)	38.8 A at T_c = 25 °C - Sustains full-load current in 500–750 W industrial power supplies with proper heatsinking.
Q_g	110 nC - Reduces gate drive power and enables efficient operation at 100–300 kHz switching frequencies.
E_AS	608 mJ - Withstands single-pulse inductive energy in hard-switched flyback or forward converters without failure.
t_rr	450 ns - Limits diode switching loss and EMI in bridge-leg configurations with synchronous rectification.
R_th(ch-c)	0.463 °C/W - Allows junction temperature control below 150 °C with ≤100 °C case temperature under full load.

Pinout & Package

TK39N60W,S1VF is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated tab (Drain-connected heatsink). The three-terminal configuration supports high-current, high-voltage switching with low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance MOSFET control input; requires <2 Ω series gate resistor to damp ringing and limit peak current during switching.
2 (Tab)	Drain (Heatsink)	Main high-voltage power terminal; electrically connected to metal tab for direct thermal mounting to heatsink; must be insulated if heatsink is grounded.
3 (Lead)	Source	Power return path and gate reference node; forms low-inductance loop with gate driver ground to minimize shoot-through risk.

Key Features

Feature	Design Value
DTMOS™ Super-Junction Structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size, improving power density in compact adapters.
Controlled Body Diode Recovery	Q_rr = 5 µC and t_rr = 450 ns reduce switching loss and EMI in LLC and phase-shifted full-bridge topologies.
Enhancement-Mode Threshold	V_th = 2.7–3.7 V ensures reliable turn-on with standard 10 V gate drivers and prevents accidental activation during startup transients.
Avalanche-Rated Operation	Guaranteed single-pulse E_AS = 608 mJ allows safe operation under inductive switching stress without external snubbers in cost-sensitive designs.

Applications

Server PSU Primary Switch	Industrial AC-DC Adapter
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and delivering up to 1.5 kW output. Use Value: Low R_DS(ON) minimizes conduction loss at full load; Q_g = 110 nC reduces gate drive loss and enables efficient high-frequency operation.	Use Scenario: 750 W industrial DIN-rail power supply with universal AC input (85–264 VAC) and wide operating temperature range (−25 to +70 °C). IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) PFC boost stage and asymmetrical half-bridge DC-DC stage. Use Value: Avalanche rating eliminates need for external clamping circuits; TO-247 package ensures robust thermal management under sustained load.
EV Onboard Charger Stage	Renewable Energy Inverter
Use Scenario: Bidirectional OBC module converting AC grid to 400 V battery pack, requiring reverse conduction capability during regenerative mode. IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC with synchronous rectification. Use Value: Fast, soft-recovery body diode (t_rr = 450 ns) enables zero-voltage switching and reduces diode-related losses in bidirectional operation.	Use Scenario: 5 kW string inverter DC-AC stage with unipolar modulation and transformerless topology. IC Role / Device Role / Timing Role: High-voltage bridge-leg switch in H-bridge output stage handling 1000 V DC link voltage. Use Value: 600 V V_DSS provides sufficient margin over 1000 V DC-link with system derating; R_th(ch-c) = 0.463 °C/W supports forced-air cooling in compact enclosures.

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and delivering up to 1.5 kW output.

Use Value: Low R_DS(ON) minimizes conduction loss at full load; Q_g = 110 nC reduces gate drive loss and enables efficient high-frequency operation.

Use Scenario: 750 W industrial DIN-rail power supply with universal AC input (85–264 VAC) and wide operating temperature range (−25 to +70 °C).

IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode (CCM) PFC boost stage and asymmetrical half-bridge DC-DC stage.

Use Value: Avalanche rating eliminates need for external clamping circuits; TO-247 package ensures robust thermal management under sustained load.

EV Onboard Charger Stage

Renewable Energy Inverter

Use Scenario: Bidirectional OBC module converting AC grid to 400 V battery pack, requiring reverse conduction capability during regenerative mode.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC with synchronous rectification.

Use Value: Fast, soft-recovery body diode (t_rr = 450 ns) enables zero-voltage switching and reduces diode-related losses in bidirectional operation.

Use Scenario: 5 kW string inverter DC-AC stage with unipolar modulation and transformerless topology.

IC Role / Device Role / Timing Role: High-voltage bridge-leg switch in H-bridge output stage handling 1000 V DC link voltage.

Use Value: 600 V V_DSS provides sufficient margin over 1000 V DC-link with system derating; R_th(ch-c) = 0.463 °C/W supports forced-air cooling in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2 (STMicroelectronics)	R_DS(ON) = 0.055 Ω (same typ.), but Q_g = 95 nC (lower) and t_rr = 320 ns (faster); TO-247 package with same pinout.	Better suited for ultra-high-frequency (>500 kHz) resonant converters where gate drive loss dominates.	Select STW38N60M2 when minimizing gate drive power and diode recovery loss is prioritized over avalanche energy margin.
IPP60R099C7 (Infineon)	R_DS(ON) = 0.099 Ω (higher), Q_g = 72 nC (lower), E_AS = 420 mJ (lower); CoolMOS™ C7 technology in TO-247.	Optimized for high-efficiency, medium-power (<300 W) adapters with tight cost targets and moderate switching frequency.	Choose IPP60R099C7 for cost-sensitive consumer power supplies where 600 V/38.8 A rating exceeds requirement and thermal margin is ample.

Compared with STW38N60M2 and IPP60R099C7, TK39N60W,S1VF delivers superior avalanche ruggedness (608 mJ vs. 420–520 mJ) and identical on-resistance, making it preferred for industrial and server-grade designs subject to high-energy transients and long service life requirements.

Availability

TK39N60W,S1VF is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for TK39N60W,S1VF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The TK39N60W,S1VF belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching power supplies and industrial motor drives.

FAQ

What is the maximum continuous drain current rating for TK39N60W,S1VF?

The TK39N60W,S1VF is rated for 38.8 A continuous drain current (I_D) at case temperature T_c = 25 °C. At higher case temperatures, the current must be derated per the Safe Operating Area curve in the datasheet; for example, at T_c = 100 °C, the maximum I_D drops to approximately 22 A. This rating assumes proper heatsinking and adherence to the channel temperature limit of 150 °C.

Does TK39N60W,S1VF have avalanche capability, and how is it specified?

Yes, TK39N60W,S1VF is fully avalanche-rated with guaranteed single-pulse avalanche energy (E_AS) of 608 mJ at T_ch = 25 °C, tested under V_DD = 90 V, L = 11.3 mH, R_G = 25 Ω, and I_AR = 9.7 A. This specification ensures robustness against inductive switching stresses in hard-switched topologies without requiring external snubber networks, enhancing system reliability in industrial power converters.

What is the gate threshold voltage range for TK39N60W,S1VF, and why does it matter?

The gate threshold voltage (V_th) for TK39N60W,S1VF is specified as 2.7–3.7 V at V_DS = 10 V and I_D = 1.9 mA. This narrow, well-controlled range ensures consistent turn-on behavior across temperature and process variation, enabling reliable operation with standard 10 V gate drivers and reducing risk of partial turn-on or shoot-through in half-bridge configurations.

How does the body diode performance of TK39N60W,S1VF compare to standard MOSFETs?

TK39N60W,S1VF features a tailored body diode with reverse recovery time (t_rr) of 450 ns and reverse recovery charge (Q_rr) of 5 µC at I_DR = 19.4 A, significantly improved over legacy planar MOSFETs. This enables reduced switching loss and lower EMI in totem-pole PFC and synchronous rectifier applications, directly supporting high-frequency, high-efficiency converter designs without external diode replacement.

Is TK39N60W,S1VF RoHS compliant, and what marking indicates compliance?

Yes, TK39N60W,S1VF is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation on the package. Non-compliant versions (with lead) are marked with an unlined lot number and [[Pb]]/INCLUDES > MCV. Always verify marking against your shipment and consult Toshiba's environmental compliance documentation for full substance declarations.

TK39N60W,S1VF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 38.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 19.4A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 1.9mA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK39N60W,S1VF FAQ

1.How can I place an order for TK39N60W,S1VF through Aetrix?

Please submit a Request for Quotation (RFQ) for TK39N60W,S1VF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK39N60W,S1VF reliable?

The price and inventory of TK39N60W,S1VF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK39N60W,S1VF is usually 5 days.

3.What payment methods are accepted for TK39N60W,S1VF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK39N60W,S1VF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK39N60W,S1VF?

TK39N60W,S1VF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK39N60W,S1VF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK39N60W,S1VF?

For technical support, including TK39N60W,S1VF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK39N60W,S1VF requirements.

6.How does Aetrix verify that TK39N60W,S1VF is sourced from the original manufacturer or authorized distributors?

All TK39N60W,S1VF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK39N60W,S1VF meets industry standards.

7.What is the process for return or replacement of TK39N60W,S1VF?

All TK39N60W,S1VF units undergo pre-shipment inspection (PSI). If there is an issue with TK39N60W,S1VF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK39N60W,S1VF part is unused and in its original packaging.

Return procedure for TK39N60W,S1VF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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