STMicroelectronics STW11NM80

Overview

STW11NM80 from STMicroelectronics is an N-channel 800 V, 380 mΩ typ., 11 A MDmesh Power MOSFET in TO-247 package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 800 V drain-source breakdown voltage, 400 mΩ max. R_DS(on), 44 A pulsed drain current, 30 V/ns dv/dt capability, and 400 mJ single-pulse avalanche energy.

For engineers reviewing the STW11NM80 datasheet, STW11NM80 pinout, STW11NM80 application, or STW11NM80 equivalent, key selection criteria include its 800 V rating for universal AC input designs, low gate charge (50 nC) enabling high-frequency operation, robust 100% avalanche-tested reliability, and TO-247 thermal performance (R_thJC = 0.83 °C/W).

Technical Context

This device uses ST's MDmesh technology-combining multiple drain process with PowerMESH horizontal layout-to achieve ultra-low on-resistance while maintaining high voltage blocking. Its 30 V/ns dv/dt rating supports fast switching in hard-switched topologies without spurious turn-on.

The integrated body diode exhibits 612 ns reverse recovery time and 7.22 µC Q_rr at 25 °C, enabling reliable operation in inductive load switching and flyback snubberless configurations. Gate input resistance of 2.7 Ω minimizes ringing and simplifies gate driver design.

Key Specifications

Pinout & Package

STW11NM80 is housed in a TO-247 package with isolated tab (drain-connected), offering high thermal conductivity and mechanical robustness for high-power applications. The package features three leads: Gate (G), Drain (D), Source (S), with the metal tab electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP11NM80, STW11NM80 offers 4.3× better thermal resistance enabling 3.7× higher continuous power in the same footprint; versus IPP60R099C7, it trades 150 V headroom and avalanche margin for higher conduction loss-making it indispensable for 800 V-class industrial and EV infrastructure.

Availability

STW11NM80 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and EV charging front-end PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STW11NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STW11NM80 belongs to the MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–900 V industrial power conversion systems where avalanche robustness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for STW11NM80 at 100 °C case temperature?

The maximum continuous drain current is 8 A at T_C = 100 °C, as specified in Table 1 of DS3013 Rev 12. This rating reflects thermal limitation-not SOA-so actual usable current depends on heatsink design and ambient conditions. At T_C = 25 °C, it supports 11 A continuous operation.

Does STW11NM80 require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. STW11NM80 has a ±30 V gate-source voltage rating and is designed for 0 V to 10 V gate drive. Its 30 V/ns dv/dt capability and low gate input resistance (2.7 Ω) inherently suppress false turn-on; negative bias is unnecessary unless system-level noise exceeds this spec.

Can STW11NM80 replace STP11NM80 in an existing TO-220 footprint design?

No-STW11NM80 uses TO-247 packaging with different lead spacing, tab orientation, and mounting hole pattern. Direct replacement would require PCB redesign, heatsink retooling, and thermal validation. However, its superior R_thJC and power handling justify the change in new designs targeting >100 W output.

Is the body diode in STW11NM80 optimized for synchronous rectification?

Yes-the source-drain diode exhibits 612 ns t_rr and 7.22 µC Q_rr at 25 °C, with soft recovery characteristics confirmed in Figure 14 and Table 7. While not a dedicated SR FET, it performs reliably in low-frequency synchronous rectification (≤100 kHz) and flyback freewheeling applications.