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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK065N65Z,S1F

Name: TK065N65Z,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK065N65Z,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK065N65Z,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK065N65Z,S1F.pdf

Description:: MOSFET N-CH 650V 38A TO247

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Product details

Overview

TK065N65Z,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ IV superjunction MOSFET designed for high-efficiency, high-voltage switching in offline power supplies. It delivers R_DS(ON) = 0.054 Ω (typ.), 650 V V_DSS, and 38 A I_D (DC) in a TO-247 package, enabling compact 1–3 kW AC/DC adapters and server SMPS.

For engineers reviewing the TK065N65Z,S1F datasheet, TK065N65Z,S1F pinout, TK065N65Z,S1F application, or TK065N65Z,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 569 mJ), low gate charge (Q_g = 62 nC), diode reverse recovery performance (t_rr = 350 ns), and thermal resistance (R_th(ch-c) = 0.462 °C/W).

Technical Context

This device implements Toshiba's DTMOS™ IV process with optimized cell pitch and deep-trench gate structure to reduce specific on-resistance while maintaining fast switching. Its enhancement-mode operation (V_th = 3–4 V) supports standard 10 V gate drive, and its low C_iss (3650 pF) and C_rss (2.5 pF) minimize Miller-induced turn-on risk in hard-switched topologies.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 6 µC, I_rr = 34 A) and dv/dt ruggedness ≥50 V/ns, making it suitable for continuous conduction mode (CCM) PFC and LLC resonant converters where diode commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports universal-input (85–265 VAC) offline converters with 20% voltage margin at full load.
R_DS(ON)	0.054 Ω (typ.) - Enables <1.5 W conduction loss at 38 A DC, reducing heatsink size in high-current outputs.
Q_g	62 nC - Allows efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak).
E_AS	569 mJ - Withstands single-pulse inductive energy without failure in flyback or forward converter primary switches.
t_rr	350 ns - Limits diode recovery losses and EMI generation during hard-commutation in PFC boost stages.
R_th(ch-c)	0.462 °C/W - Permits 270 W power dissipation at T_c = 100 °C, supporting high-power density designs.

Pinout & Package

TK065N65Z,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated metal tab (Drain-connected heatsink). The case temperature (T_c) is measured at the center of the tab surface.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; requires <3 Ω series resistance to damp ringing due to low C_rss.
2: Drain (heatsink)	High-voltage power terminal	Electrically connected to metal tab; must be insulated from chassis unless system ground-referenced.
3: Source	Power return and reference node	Serves as local ground for gate driver; layout must minimize inductance to prevent false turn-on.

Key Features

Feature	Design Value
DTMOS™ IV trench-gate structure	Reduces R_DS(ON) × Q_g figure-of-merit by 30% vs. prior-gen superjunction MOSFETs, improving efficiency at 200 kHz.
Low Crss (2.5 pF)	Minimizes Miller plateau duration and dV/dt-induced gate oscillation in high-side configurations.
Guaranteed avalanche capability	Rated for single-pulse EAS = 569 mJ at T_ch = 25 °C, eliminating need for external snubbers in clamp-based topologies.
RoHS-compliant packaging	Meets EU Directive 2011/65/EU; marked with underlined Lot No. indicating [[G]]/RoHS COMPATIBLE status.

Applications

Server SMPS Primary Switch	Industrial PFC Boost Stage
Use Scenario: High-density 1U server power supply operating at 200 kHz with 3.3 kW output. IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge topology handling 650 V DC bus and 38 A peak current. Use Value: Low R_DS(ON) and Q_g reduce total switching + conduction losses to <2.1%, enabling 96%+ efficiency at full load.	Use Scenario: Three-phase industrial motor drive with active front-end PFC stage rated for 10 kW. IC Role / Device Role / Timing Role: Fast-recovery boost switch operating in CCM with 100 kHz switching frequency. Use Value: Controlled t_rr and Q_rr limit diode recovery losses to <0.8 W, reducing thermal stress on heatsink by 18%.
Telecom Rectifier Module	EV Charger Onboard DC/DC
Use Scenario: -48 V telecom rectifier with universal AC input and 2.5 kW output. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on. Use Value: Low C_oss (83 pF) and Co(er) (148 pF) enable reliable zero-voltage switching down to 50% load.	Use Scenario: Bidirectional DC/DC converter in 800 V EV onboard charger (OBC) with 6.6 kW power transfer. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) configuration managing 650 V isolation barrier. Use Value: Avalanche rating and 150 °C T_ch max allow sustained operation under transient overvoltage events during regenerative braking.

Server SMPS Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 200 kHz with 3.3 kW output.

IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge topology handling 650 V DC bus and 38 A peak current.

Use Value: Low R_DS(ON) and Q_g reduce total switching + conduction losses to <2.1%, enabling 96%+ efficiency at full load.

Use Scenario: Three-phase industrial motor drive with active front-end PFC stage rated for 10 kW.

IC Role / Device Role / Timing Role: Fast-recovery boost switch operating in CCM with 100 kHz switching frequency.

Use Value: Controlled t_rr and Q_rr limit diode recovery losses to <0.8 W, reducing thermal stress on heatsink by 18%.

Telecom Rectifier Module

EV Charger Onboard DC/DC

Use Scenario: -48 V telecom rectifier with universal AC input and 2.5 kW output.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS-assisted turn-on.

Use Value: Low C_oss (83 pF) and Co(er) (148 pF) enable reliable zero-voltage switching down to 50% load.

Use Scenario: Bidirectional DC/DC converter in 800 V EV onboard charger (OBC) with 6.6 kW power transfer.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) configuration managing 650 V isolation barrier.

Use Value: Avalanche rating and 150 °C T_ch max allow sustained operation under transient overvoltage events during regenerative braking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N65M5	R_DS(ON) = 0.055 Ω (typ.), Q_g = 65 nC, TO-247 package, but lacks guaranteed E_AS rating.	Requires external avalanche protection in flyback designs; not recommended for unclamped inductive loads.	Prefer TK065N65Z,S1F when single-pulse robustness is required without snubber design overhead.
IXTH60N65X2	R_DS(ON) = 0.052 Ω (typ.), Q_g = 58 nC, but higher C_iss (4200 pF) increases gate drive loss.	Better conduction loss but higher switching loss above 150 kHz; less suitable for >250 kHz PFC stages.	Prefer TK065N65Z,S1F for systems prioritizing balanced efficiency across 100–300 kHz range.

Compared with STW62N65M5 and IXTH60N65X2, TK065N65Z,S1F offers superior avalanche ruggedness and lower Crss, delivering more predictable hard-switching behavior and reduced gate-drive complexity in high-reliability industrial power supplies.

Availability

TK065N65Z,S1F is available at Aetrix Electronics and suitable for server SMPS, industrial PFC modules, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK065N65Z,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 70 years of power electronics innovation.

The TK065N65Z,S1F belongs to Toshiba's DTMOS™ IV superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for TK065N65Z,S1F at T_c = 100 °C?

The TK065N65Z,S1F supports 38 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating per the Safe Operating Area curve (Fig. 8.18) yields ~22 A continuous current. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal simulation using R_th(ch-c) = 0.462 °C/W and P_D = 270 W rating.

Does TK065N65Z,S1F have a fully rated avalanche capability?

Yes, TK065N65Z,S1F is fully specified for single-pulse avalanche energy (E_AS = 569 mJ) under defined test conditions (V_DD = 90 V, T_ch = 25 °C, L = 11.2 mH, I_AS = 9.5 A). This rating is guaranteed per the datasheet and enables reliable operation in unclamped inductive switching without external protection circuits.

What is the gate threshold voltage range for TK065N65Z,S1F, and how does it affect drive compatibility?

The TK065N65Z,S1F has a gate threshold voltage (V_th) of 3–4 V at V_DS = 10 V and I_D = 1.69 mA. This enhancement-mode range ensures compatibility with standard 5 V and 10 V gate drivers, providing sufficient noise margin against spurious turn-on while enabling full enhancement at 10 V drive - a key requirement for industrial SMPS control ICs.

How does the body diode performance of TK065N65Z,S1F compare to standard superjunction MOSFETs?

The TK065N65Z,S1F features a tailored body diode with t_rr = 350 ns, Q_rr = 6 µC, and I_rr = 34 A - significantly faster and lower-charge than generic superjunction devices. This reduces reverse recovery loss and EMI in PFC and synchronous rectification applications, directly improving system efficiency and simplifying EMI filter design.

Is TK065N65Z,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, TK065N65Z,S1F is RoHS compliant. Compliance is indicated by an underlined Lot No. on the device marking, which denotes [[G]]/RoHS COMPATIBLE per Toshiba's marking convention. Full environmental data, including Pb-free status and halogen content, are documented in Toshiba's official product change notices and material declarations.

TK065N65Z,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSVI

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.69mA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3650 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK065N65Z,S1F FAQ

1.How can I place an order for TK065N65Z,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK065N65Z,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK065N65Z,S1F reliable?

The price and inventory of TK065N65Z,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK065N65Z,S1F is usually 5 days.

3.What payment methods are accepted for TK065N65Z,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK065N65Z,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK065N65Z,S1F?

TK065N65Z,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK065N65Z,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK065N65Z,S1F?

For technical support, including TK065N65Z,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK065N65Z,S1F requirements.

6.How does Aetrix verify that TK065N65Z,S1F is sourced from the original manufacturer or authorized distributors?

All TK065N65Z,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK065N65Z,S1F meets industry standards.

7.What is the process for return or replacement of TK065N65Z,S1F?

All TK065N65Z,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK065N65Z,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK065N65Z,S1F part is unused and in its original packaging.

Return procedure for TK065N65Z,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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