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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG40N60E-GE3

Name: SIHG40N60E-GE3
Brand: Vishay Siliconix
SKU: SIHG40N60E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG40N60E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG40N60E-GE3.pdf

Description:: MOSFET N-CH 600V 40A TO247AC

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Product details

Overview

SIHG40N60E-GE3 from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 0.065 Ω R_DS(on) at V_GS = 10 V, 197 nC total gate charge, and 691 mJ single-pulse avalanche energy - designed for high-efficiency switching in telecom power supplies and solar inverters.

For engineers reviewing the SIHG40N60E-GE3 datasheet, SIHG40N60E-GE3 pinout, SIHG40N60E-GE3 application, or SIHG40N60E-GE3 equivalent, key selection criteria include its 600 V blocking voltage, low Q_g/R_DS(on) figure-of-merit, robust body diode with 595 ns reverse recovery time, and thermal resistance of 0.38 °C/W (junction-to-case).

Technical Context

This device uses planar stripe silicon technology optimized for high-voltage hard-switching applications. Its gate threshold voltage (2–4 V) enables standard 10 V gate drive compatibility, while the 131 nC typical Q_g and 54 nC Q_gd support efficient high-frequency operation up to 100 kHz in PFC and DC-DC stages.

The integral body diode is rated for 40 A continuous source-drain current and exhibits 1.2 V forward voltage at 6.5 A, with controlled 100 A/μs dI/dt capability and 4.5 V/ns reverse diode dV/dt rating - critical for reliable operation in inductive load switching and bidirectional energy transfer circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50 % safety margin in industrial SMPS and PV inverters
R_DS(on) max	0.075 Ω at 20 A, 25 °C - ensures <1.2 W conduction loss at 40 A in thermally managed systems
Q_g max	197 nC - determines gate driver power requirement and switching speed trade-off in 48–100 kHz converters
E_AS	691 mJ - enables unclamped inductive switching without external snubbers in motor drive and welding controls
R_thJC	0.38 °C/W - allows 329 W dissipation with ≤ 125 °C case temperature rise, supporting high-power density layouts
I_D cont @ 100 °C	26 A - defines usable current derating in forced-air-cooled server PSU modules
V_SD	1.2 V at 6.5 A, 25 °C - sets forward conduction loss during synchronous rectification or freewheeling phases

Pinout & Package

SIHG40N60E-GE3 is housed in a TO-247AC package with isolated drain tab, lead (Pb)-free and halogen-free terminations, and thermal pad contour per JEDEC outline. The package provides 0.38 °C/W junction-to-case thermal resistance and supports >300 °C peak soldering temperature for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 4436 pF affects gate driver sizing and EMI filtering
2 (Drain)	High-side power terminal	Connected to HV DC bus; electrically tied to metal tab for thermal path and high-current return
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and body diode reverse recovery charge
4 (Drain)	Redundant high-current terminal	Parallel drain connection reduces package inductance and improves current sharing in paralleled configurations

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	13.1 Ω·nC - minimizes combined switching + conduction losses in high-frequency PFC and LLC resonant converters
Avalanche-rated (UIS)	691 mJ single-pulse - eliminates need for external clamping in inductive load switching and fault-tolerant designs
Ultra-low Q_gd/Q_g ratio	27.4 % - improves Miller immunity and enables stable operation with high dV/dt (70 V/ns) in fast-switching topologies
Body diode Q_rr	9.9 μC typical - reduces turn-on loss in synchronous rectification and ZVS circuits versus standard MOSFETs
Lead (Pb)-free & Halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - meets environmental requirements for telecom and industrial equipment

Applications

Server Power Supplies	Solar PV Inverters
Use Scenario: Primary-side switching in 3.5 kW telecom rectifiers and 48 V intermediate bus converters. IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward and phase-shifted full-bridge topologies. Use Value: 0.065 Ω R_DS(on) and 197 nC Q_g enable >96 % efficiency at 50–100 kHz switching, reducing heatsink size by 35 % vs. legacy 650 V MOSFETs.	Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: Unidirectional HV switch in boost stage and bidirectional switch in H-bridge inverter legs. Use Value: 600 V V_DS rating with 691 mJ E_AS withstands lightning-induced transients and grid fault conditions without failure.
Industrial Motor Drives	Induction Heating Systems
Use Scenario: Inverter output stage in 7.5–15 kW variable frequency drives for HVAC and pumps. IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz hard-switched three-phase bridge arms. Use Value: 40 A continuous current and 123 A pulsed rating support 150 % overload for 60 s; body diode t_rr = 595 ns limits commutation loss during PWM dead-time.	Use Scenario: Resonant tank switching in 20–100 kW induction cooktops and metal melting systems. IC Role / Device Role / Timing Role: High-dV/dt switch in series-resonant half-bridge operating at 20–80 kHz. Use Value: 70 V/ns dV/dt rating and low Q_gd ensure reliable turn-off under high di/dt conditions; R_thJC = 0.38 °C/W sustains 329 W dissipation with liquid cooling.

Server Power Supplies

Solar PV Inverters

Use Scenario: Primary-side switching in 3.5 kW telecom rectifiers and 48 V intermediate bus converters.

IC Role / Device Role / Timing Role: High-voltage power switch in active clamp forward and phase-shifted full-bridge topologies.

Use Value: 0.065 Ω R_DS(on) and 197 nC Q_g enable >96 % efficiency at 50–100 kHz switching, reducing heatsink size by 35 % vs. legacy 650 V MOSFETs.

Use Scenario: DC-link switching in string inverters handling 600–1000 V DC input from photovoltaic arrays.

IC Role / Device Role / Timing Role: Unidirectional HV switch in boost stage and bidirectional switch in H-bridge inverter legs.

Use Value: 600 V V_DS rating with 691 mJ E_AS withstands lightning-induced transients and grid fault conditions without failure.

Industrial Motor Drives

Induction Heating Systems

Use Scenario: Inverter output stage in 7.5–15 kW variable frequency drives for HVAC and pumps.

IC Role / Device Role / Timing Role: IGBT replacement in 6–16 kHz hard-switched three-phase bridge arms.

Use Value: 40 A continuous current and 123 A pulsed rating support 150 % overload for 60 s; body diode t_rr = 595 ns limits commutation loss during PWM dead-time.

Use Scenario: Resonant tank switching in 20–100 kW induction cooktops and metal melting systems.

IC Role / Device Role / Timing Role: High-dV/dt switch in series-resonant half-bridge operating at 20–80 kHz.

Use Value: 70 V/ns dV/dt rating and low Q_gd ensure reliable turn-off under high di/dt conditions; R_thJC = 0.38 °C/W sustains 329 W dissipation with liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V, 48 A, R_DS(on) = 0.062 Ω, Q_g = 160 nC, TO-247 long leads	Lower R_DS(on) but higher Q_gd (68 nC) and no avalanche rating	Prefer for lower conduction loss where avalanche ruggedness is not required; requires gate drive redesign due to different Q_gd/Q_g ratio
IXFH40N60P	600 V, 40 A, R_DS(on) = 0.075 Ω, Q_g = 180 nC, TO-247 non-isolated drain	Higher R_DS(on), no specified E_AS, and non-isolated drain tab limits PCB layout flexibility	Acceptable for cost-sensitive industrial SMPS where thermal management allows higher R_DS(on); avoid in safety-critical or high-reliability systems requiring avalanche testing

Compared with STW48N60M2 and IXFH40N60P, SIHG40N60E-GE3 delivers superior avalanche ruggedness (691 mJ), lower Q_gd/Q_g ratio for improved noise immunity, and isolated drain for simplified isolation design - making it optimal for telecom, solar, and high-reliability industrial applications demanding proven UIS performance.

Availability

SIHG40N60E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for SIHG40N60E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing control and AEC-Q101 qualified processes.

The E Series Power MOSFET product line targets high-efficiency, high-reliability switching in telecom infrastructure, renewable energy, and industrial power conversion - emphasizing low FOM, avalanche ruggedness, and thermal robustness.

FAQ

What is the maximum continuous drain current rating for SIHG40N60E-GE3 at 100 °C case temperature?

The SIHG40N60E-GE3 has a maximum continuous drain current (I_D) rating of 26 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied when ambient or heatsink conditions prevent maintaining T_C ≤ 25 °C. At T_C = 25 °C, the rating is 40 A.

Does SIHG40N60E-GE3 have an avalanche energy rating, and what is its value?

Yes, SIHG40N60E-GE3 is avalanche energy rated (UIS). Its single-pulse avalanche energy (E_AS) is 691 mJ under test conditions of V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 7 A. This rating is confirmed in the Absolute Maximum Ratings section and supports robust operation in inductive switching applications without external clamping.

What is the gate threshold voltage range for SIHG40N60E-GE3, and how does it affect drive requirements?

The gate-source threshold voltage (V_GS(th)) for SIHG40N60E-GE3 is specified from 2 V to 4 V at V_DS = V_GS and I_D = 250 μA. This range confirms compatibility with standard 10 V gate drivers and ensures full enhancement at V_GS ≥ 10 V. It does not support logic-level (5 V) drive, requiring dedicated gate driver ICs or level-shifting circuitry in microcontroller-based systems.

How is the body diode performance of SIHG40N60E-GE3 characterized, and what are its key parameters?

The SIHG40N60E-GE3 features an integral body diode with forward voltage (V_SD) of 1.2 V at I_S = 6.5 A and T_J = 25 °C, reverse recovery time (t_rr) of 595 ns typical, and reverse recovery charge (Q_rr) of 9.9 μC. These values are measured at I_F = 20 A, dI/dt = 100 A/μs, and V_R = 25 V - indicating suitability for freewheeling and synchronous rectification in medium-frequency SMPS.

What package type and lead finish does SIHG40N60E-GE3 use, and what are its thermal characteristics?

SIHG40N60E-GE3 uses the TO-247AC package with lead (Pb)-free and halogen-free terminations, compliant with RoHS Directive 2011/65/EU. Its thermal resistance from junction to case (R_thJC) is 0.38 °C/W maximum, enabling 329 W power dissipation at T_C = 25 °C. The package includes an isolated drain tab and supports peak soldering temperatures up to 300 °C for 10 s.

SIHG40N60E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 197 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4436 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 329W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG40N60E-GE3 FAQ

1.How can I place an order for SIHG40N60E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG40N60E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG40N60E-GE3 reliable?

The price and inventory of SIHG40N60E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG40N60E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG40N60E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG40N60E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG40N60E-GE3?

SIHG40N60E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG40N60E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG40N60E-GE3?

For technical support, including SIHG40N60E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG40N60E-GE3 requirements.

6.How does Aetrix verify that SIHG40N60E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG40N60E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG40N60E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG40N60E-GE3?

All SIHG40N60E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG40N60E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG40N60E-GE3 part is unused and in its original packaging.

Return procedure for SIHG40N60E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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