Infineon Technologies IPW65R065C7XKSA1

Overview

IPW65R065C7XKSA1 from Infineon Technologies is a 650 V, 65 mΩ superjunction MOSFET in TO-247 package, optimized for high-frequency hard-switching and PFC stages. It delivers 33 A continuous drain current at 25°C, 145 A pulsed current, and features 64 nC total gate charge with 8 µJ output switching energy at 400 V - enabling high-efficiency server power supplies and telecom rectifiers.

For engineers reviewing the IPW65R065C7XKSA1 datasheet, IPW65R065C7XKSA1 pinout, IPW65R065C7XKSA1 application, or IPW65R065C7XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation speed (60 A/µs), and thermal resistance (0.73 °C/W junction-to-case).

Technical Context

This CoolMOS™ C7 device employs superjunction architecture to reduce R_DS(on) × Q_g and R_DS(on) × E_oss figures of merit, supporting >100 kHz switching in continuous conduction mode PFC. Its gate threshold voltage (3–4 V) and plateau voltage (5.4 V) enable robust drive compatibility with standard 12–15 V gate drivers.

The MOSFET integrates a fast-recovery body diode (t_rr = 800 ns, Q_rr = 10 µC at 400 V), rated for 60 A/µs di/dt, and meets industrial-grade JEDEC qualification (J-STD-20/JESD22). Its 700 V absolute maximum V_DS rating provides margin for 650 V nominal operation under transient overvoltage conditions.

Key Specifications

Pinout & Package

IPW65R065C7XKSA1 uses the standard TO-247 package with isolated tab (drain-connected), offering mechanical robustness and high thermal conductivity for industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXFH60N60X3, IPW65R065C7XKSA1 offers the lowest combined switching-conduction loss in hard-switched PFC, best dv/dt immunity for unclamped layouts, and highest thermal efficiency per unit footprint due to its 0.73 °C/W R_thJC.

Availability

IPW65R065C7XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC stages, telecom rectifier modules, and UPS inverter stages requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for IPW65R065C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and renewable energy systems, emphasizing reduced gate charge, enhanced ruggedness, and industrial reliability.

FAQ

What is the maximum continuous drain current rating for IPW65R065C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 21 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is thermally limited by junction temperature (T_j ≤ 150°C) and assumes proper heatsinking with R_thJC = 0.73 °C/W. Derating curves in Diagram 1 confirm linear reduction from 33 A at 25°C to 21 A at 100°C.

Does IPW65R065C7XKSA1 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to +15 V gate drive; its gate threshold voltage (3–4 V) and plateau voltage (5.4 V) ensure full enhancement and stable off-state with standard positive-only drivers. Negative bias is not required, though –5 V may improve noise immunity in high-noise environments per application note AN2015-05.

Can IPW65R065C7XKSA1 be paralleled with identical units without gate resistors?

No. Parallel operation requires individual gate resistors (typically 5–10 Ω) and ferrite beads on each gate lead to suppress oscillation and ensure current sharing. The datasheet explicitly recommends this in the Applications section to prevent dynamic imbalance caused by layout asymmetry and parameter spread.

Is the TO-247 package of IPW65R065C7XKSA1 lead-free and RoHS-compliant?

Yes. The device uses Pb-free plating and halogen-free mold compound, fully compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1. The "XKSA1" suffix confirms industrial-grade packaging with MSL Level 1 rating and no moisture sensitivity limitations for standard assembly.