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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JAN1N3613/TR DIODE GEN PURP 600V 1A Microchip Technology	3,753	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 300 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N3614/TR DIODE GEN PURP 800V 1A Microchip Technology	5,508	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
S6D20065G DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	6,283	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	61A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	1650pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
FFH60UP60S3 DIODE GEN PURP 600V 60A TO247-3 onsemi	4,889	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-247-3	-65°C ~ 150°C
1N5621 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	3,600	RFQ	Datasheet	-	A, Axial	Bulk	Discontinued at Digi-Key	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	20pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N3600 DIODE GEN PURP 50V 200MA DO35 Microchip Technology	9,330	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/231	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
APT75DQ120SG DIODE GEN PURP 75A D3PAK Microchip Technology	9,854	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	-	75A	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	325 ns	100 µA @ 1200 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
JANHCA1N4148 DIODE GEN PURP 75V 200MA UB Microchip Technology	3,279	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	75 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	4pF @ 0V, 1MHz	Military	MIL-S-19500/116	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
VS-6FL60S05 DIODE GEN PURP 600V 6A DO203AA Vishay General Semiconductor - Diodes Division	8,836	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	600 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-6FLR60S05 DIODE GP REV 600V 6A DO203AA Vishay General Semiconductor - Diodes Division	8,340	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-C20ET07T-M3 DIODE SIL CARB 650V 20A TO220AC Vishay General Semiconductor - Diodes Division	5,195	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	1050pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-16FLR60S05 DIODE GP REV 600V 16A DO203AA Vishay General Semiconductor - Diodes Division	6,955	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	16A	1.4 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
STPSC606D DIODE SIL CARB 600V 6A TO220AC STMicroelectronics	17	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 600 V	375pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
1N4371/TR DIODE DO35 Microchip Technology	9,192	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	-	-	-	1.1 V @ 200 mA	-	-	75 µA @ 1 V	-	-	-	Through Hole	DO-204AH (DO-35)	-
SICPT3060Y-BP SCHOTTKY DIODES Micro Commercial Co	7,095	RFQ	Datasheet	-	TO-247-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	30A	1.65 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	1157pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
JANTX1N4246 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	5,899	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 400 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
LSIC2SD065C06A DIODE SIL CARB 650V 18.5A TO252 Littelfuse Inc.	6,211	RFQ	Datasheet	Gen2	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C
1N648UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	3,357	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
VS-12FLR60S02 DIODE GP REV 600V 12A DO203AA Vishay General Semiconductor - Diodes Division	4,153	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	50 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C
VS-6FL80S05 DIODE GEN PURP 800V 6A DO203AA Vishay General Semiconductor - Diodes Division	8,693	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	6A	1.4 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C

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