Microchip Technology JAN1N3613/TR

Overview

JAN1N3613/TR from Microsemi is a military-qualified, voidless-hermetically-sealed standard recovery glass rectifier diode rated for 600 V working peak reverse voltage, 1.0 A average forward current at 100°C, and 30 A non-repetitive surge current; it serves as a robust power conversion element in high-reliability DC power supplies and EMI-filtered rectification stages.

For engineers reviewing the JAN1N3613/TR datasheet, JAN1N3613/TR pinout, JAN1N3613/TR application, or JAN1N3613/TR equivalent, key selection factors include its MIL-PRF-19500/228 qualification, -65°C to +175°C operating temperature range, 1.1 V max forward voltage at 1 A, 300 µA max reverse leakage at 600 V, and axial-leaded "A" package with tungsten slugs for low thermal resistance.

Technical Context

This diode operates as a unidirectional, standard-recovery (non-fast) rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its internal Category I metallurgical bond ensures mechanical integrity under thermal cycling and shock.

Designed for high-reliability linear and switched-mode power supplies, it supports sustained conduction at 1.0 A up to 100°C ambient (derated to 0.30 A at 150°C), with 38°C/W junction-to-lead thermal resistance measured at 10 mm lead length - enabling stable operation without forced cooling in ruggedized enclosures.

Key Specifications

Pinout & Package

Package: Axial-leaded "A" package with voidless hermetically sealed hard glass body, tungsten slugs, and tin/lead (Sn/Pb) plated copper leads. Cathode identified by painted band. Weight ≈ 500 mg.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier applications.

Compared with JAN1N3612/TR and JAN1N3614/TR, the JAN1N3613/TR provides optimal balance of reverse voltage margin (600 V), thermal performance, and surge capability for 28–270 VAC input-derived 400–600 VDC bus applications in harsh environments.

Availability

JAN1N3613/TR is available at Aetrix Electronics and suitable for avionics power supplies, military radar transmitters, and downhole oilfield instrumentation requiring stable component supply across extended product lifecycles and rigorous environmental qualification.

Supply support for JAN1N3613/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified discrete and analog components.

The JAN1N3613/TR belongs to Microsemi's MIL-PRF-19500/228-qualified standard recovery rectifier family, engineered for mission-critical power conversion where failure is not an option - including aerospace, defense, and energy infrastructure.

FAQ

What is the maximum operating temperature for JAN1N3613/TR?

JAN1N3613/TR has a junction and storage temperature range of -65°C to +175°C. It delivers 1.0 A average forward current at 100°C ambient, derating linearly to 0.30 A at 150°C. The 38°C/W junction-to-lead thermal resistance supports reliable operation in sealed, high-temperature enclosures without active cooling - critical for JAN1N3613/TR deployments in downhole and avionics systems.

Is JAN1N3613/TR suitable for use in a full-wave bridge rectifier?

Yes, JAN1N3613/TR is commonly used in full-wave bridge configurations due to its axial-leaded "A" package, cathode band polarity marking, and matched electrical parameters across the 1N3611–1N3614 series. Its 600 V VRWM and 30 A surge rating make it appropriate for bridging 270 VAC aircraft power or 400 Hz transformer secondaries - all four diodes in the bridge must be identical to ensure balanced conduction and thermal distribution in the JAN1N3613/TR implementation.

Does JAN1N3613/TR have radiation hardness certification?

Yes, JAN1N3613/TR exhibits inherent radiation hardness validated in Microsemi MicroNote 050. It is not individually certified per MIL-STD-883 method 1019, but its construction - voidless hermetic glass, Category I metallurgical bond, and silicon process - provides proven tolerance to total ionizing dose (TID) and single-event effects (SEE) in space and nuclear environments - a documented characteristic of the JAN1N3613/TR family.

What is the thermal resistance of JAN1N3613/TR, and how is it measured?

JAN1N3613/TR has a junction-to-lead thermal resistance of 38°C/W, measured with 10 mm (3/8 inch) lead length from the diode body per MIL-PRF-19500/228 test conditions. This value reflects conduction through tungsten slugs and axial copper leads - enabling accurate junction temperature estimation in chassis-mount or PCB-edge-mount configurations where leads serve as primary heat paths. That thermal behavior is integral to JAN1N3613/TR reliability modeling.

Can JAN1N3613/TR replace JAN1N3614/TR in an existing design?

JAN1N3613/TR is not a direct replacement for JAN1N3614/TR in circuits where peak reverse voltage exceeds 600 V, as its VRWM is 200 V lower. However, if system-level analysis confirms worst-case reverse stress remains ≤600 V - including transients and ringing - then JAN1N3613/TR may be substituted with no layout change. Always verify reverse voltage margin and surge capability alignment before substituting JAN1N3613/TR for JAN1N3614/TR.