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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-100BGQ100HF4 DIODE SCHOTTKY 30V 100A POWERTAB Vishay General Semiconductor - Diodes Division	7,802	RFQ	-	-	PowerTab®	Tube	Obsolete	Schottky	30 V	100A	630 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.4 mA @ 30 V	-	Automotive	AEC-Q101	Chassis Mount	PowerTab®	-55°C ~ 150°C
SCS215AEC DIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor	7,941	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C (Max)
SCS215AGHRC DIODE SIL CARB 650V 15A TO220AC Rohm Semiconductor	6,299	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	15A	1.55 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 600 V	550pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
G3S06504A DIODE SIC 650V 11.5A TO220AC Global Power Technology-GPT	13	RFQ	Datasheet	-	TO-220-2	Cut Tape (CT)	Active	SiC (Silicon Carbide) Schottky	650 V	11.5A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	181pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
1N486A ZENER DIODE Microchip Technology	5,671	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
SICRD101200 DIODE SIL CARBIDE 1.2KV 10A DPAK SMC Diode Solutions	7,462	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	640pF @ 0V, 1MHz	-	-	Surface Mount	DPAK	-55°C ~ 175°C
JAN1N4153-1/TR DIODE GEN PURP 50V 150MA DO35 Microchip Technology	2,296	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	50 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	50 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/337	Through Hole	DO-204AH (DO-35)	-65°C ~ 200°C
1N5617/TR DIODE GEN PURP 400V 1A Microchip Technology	3,093	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	35pF @ 12V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-95PFR140W DIODE GP REV 1.4KV 95A DO203AB Vishay General Semiconductor - Diodes Division	6,580	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1400 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
JANTX1N3595A-1/TR DIODE GEN PURP 125V 150MA DO35 Microchip Technology	5,621	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	Military	MIL-S-19500-241	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
LSIC2SD120A10 DIODE SIL CARB 1.2KV 28A TO220AC Littelfuse Inc.	6,363	RFQ	Datasheet	Gen2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	28A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	582pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
1N5712-1/TR DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology	4,956	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	20 V	75mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-150EBU02HF4 DIODE GP 200V 150A POWERTAB Vishay General Semiconductor - Diodes Division	3,689	RFQ	-	FRED Pt®	PowerTab®	Tube	Obsolete	Standard	200 V	150A	1.1 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Automotive	AEC-Q101	Chassis Mount	PowerTab®	-55°C ~ 175°C
WNSC2D301200W6Q WNSC2D301200W/TO247-2L/STANDARD WeEn Semiconductors	9,578	RFQ	Datasheet	-	TO-247-2	Bulk	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.6 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	1407pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N486B DIODE GEN PURP 250V 200MA DO35 Microchip Technology	2,822	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	250 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 250 V	-	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JANHCA1N4150 DIODE GEN PURP 50V 200MA DO35 Microchip Technology	7,376	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	2.5pF @ 0V, 1MHz	Military	MIL-S-19500/231	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JANHCA1N5711 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	2,418	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
JANTX1N4245/TR DIODE GEN PURP 200V 1A Microchip Technology	3,960	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
1N5417-1 DIODE GEN PURP 200V 3A B Microchip Technology	2,546	RFQ	-	-	Axial	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	-	-	Through Hole	B	-65°C ~ 175°C
VS-12FL80S05 DIODE GEN PURP 800V 12A DO203AA Vishay General Semiconductor - Diodes Division	6,851	RFQ	Datasheet	-	DO-203AA, DO-4, Stud	Bulk	Active	Standard	800 V	12A	1.4 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	50 µA @ 800 V	-	-	-	Chassis, Stud Mount	DO-203AA (DO-4)	-65°C ~ 150°C

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