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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N5817 5A SCHOTTKY RECTIFIER Microchip Technology	9,976	RFQ	-	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
1N5614US/TR DIODE GEN PURP 200V 1A D-5A Microchip Technology	7,927	RFQ	Datasheet	-	SQ-MELF, A	Tape & Reel (TR)	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
1N5818 DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	7,704	RFQ	-	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
1N5817G DIODE SCHOTTKY 20V 1A DO41 Microchip Technology	4,743	RFQ	-	-	DO-204AL, DO-41, Axial	Bulk	Active	Schottky	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 150°C
JANTX1N3612/TR DIODE GEN PURP 400V 1A Microchip Technology	6,600	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
VS-150EBU02 DIODE GP 200V 150A POWIRTAB Vishay General Semiconductor - Diodes Division	8,774	RFQ	Datasheet	FRED Pt®	PowerTab™, PowIRtab™	Bulk	Obsolete	Standard	200 V	150A	1.13 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	50 µA @ 200 V	-	-	-	Chassis Mount	PowIRtab™	-55°C ~ 175°C
JANTXV1N4148-1 DIODE GEN PURP 75V 200MA DO35 MACOM Technology Solutions	6,068	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Discontinued at Digi-Key	Standard	75 V	200mA	1.2 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	500 nA @ 75 V	-	Military	MIL-PRF-19500/116	Through Hole	DO-35	-65°C ~ 200°C
JAN1N4247/TR DIODE GEN PURP 600V 1A Microchip Technology	2,020	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
GB05MPS17-247 DIODE SIL CARB 1.7KV 25A TO247-2 GeneSiC Semiconductor	5,897	RFQ	Datasheet	SiC Schottky MPS™	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1700 V	25A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	6 µA @ 1700 V	334pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
JAN1N5622 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	5,427	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1000 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JAN1N6642US DIODE GEN PURP 75V 300MA D-5D Microchip Technology	7,444	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	40pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	D-5D	-65°C ~ 175°C
1N5552/TR DIODE GEN PURP 600V 3A B AXIAL Microchip Technology	2,938	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	600 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
1N5805 DIODE GEN PURP 125V 1A AXIAL Microchip Technology	6,361	RFQ	Datasheet	-	A, Axial	Bulk	Discontinued at Digi-Key	Standard	125 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 125°C
DSA9-12F DIODE AVAL 1.2KV 11A DO203AA IXYS	4,990	RFQ	-	-	DO-203AA, DO-4, Stud	Box	Obsolete	Avalanche	1200 V	11A	1.4 V @ 36 A	Standard Recovery >500ns, > 200mA (Io)	-	3 mA @ 1200 V	-	-	-	Chassis, Stud Mount	DO-203AA	-40°C ~ 180°C
APT100D60BG DIODE GEN PURP 600V 100A TO247 Microchip Technology	3,867	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	100A	2 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	250 µA @ 600 V	-	-	-	Through Hole	TO-247	-55°C ~ 150°C
GC15MPS12-247 DIODE SIL CARB 1.2KV 75A TO247-2 GeneSiC Semiconductor	2,366	RFQ	Datasheet	SiC Schottky MPS™	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	75A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	14 µA @ 1200 V	1089pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
1N5551 DIODE GEN PURP 400V 3A AXIAL Microchip Technology	6,230	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5711-1/TR DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	6,050	RFQ	-	-	DO-204AH, DO-35, Axial	Tape & Reel (TR)	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 70 V	2pF @ 0V, 1MHz	Military	MIL-PRF-19500/444	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
1N5803E3 DIODE GEN PURP 80V 1A AXIAL Microchip Technology	9,564	RFQ	-	-	Axial	Bulk	Active	Standard	80 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 75 V	25pF @ 10V, 1MHz	-	-	Through Hole	Axial	-65°C ~ 175°C
1N5622/TR DIODE GEN PURP 1KV 1A Microchip Technology	3,669	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C

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