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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VS-95PF140 DIODE GEN PURP 1.4KV 95A DO203AB Vishay General Semiconductor - Diodes Division	3,652	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1400 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
STPSC806G-TR DIODE SIL CARBIDE 600V 8A D2PAK STMicroelectronics	5,255	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	450pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
CDLL1A80 DIODE SCHOTTKY 80V 1A DO213AB Microchip Technology	5,320	RFQ	Datasheet	-	DO-213AB, MELF	Bulk	Active	Schottky	80 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	-	-	-	Surface Mount	DO-213AB	-
JANTX1N5620/TR DIODE GEN PURP 800V 1A Microchip Technology	8,837	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5552/TR DIODE GEN PURP 600V 5A Microchip Technology	2,224	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	600 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 600 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5550 DIODE GEN PURP 200V 3A AXIAL Microchip Technology	6,610	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5551 DIODE GEN PURP 400V 3A AXIAL Microchip Technology	8,379	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N6643 DIODE GEN PURP 50V 300MA AXIAL Microchip Technology	4,064	RFQ	Datasheet	-	D, Axial	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Through Hole	D-5D	-65°C ~ 175°C
JAN1N5418/TR DIODE GEN PURP 400V 3A Microchip Technology	9,185	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	-	Military	MIL-PRF-19500/411	Through Hole	B, Axial	-65°C ~ 175°C
PCFFS08120AF DIODE SIL CARBIDE 1.2KV 20A DIE onsemi	7,731	RFQ	-	-	Die	Tray	Active	SiC (Silicon Carbide) Schottky	1200 V	20A	1.723 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	-	-	-	Surface Mount	Die	175°C (Max)
CD485B DIODE GEN PURP 200V 200MA DIE Microchip Technology	9,104	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Standard	200 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	-	-	Surface Mount	Die	-65°C ~ 175°C
CD483B DIODE GEN PURP 80V 200MA DIE Microchip Technology	4,326	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Standard	80 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 70 V	-	-	-	Surface Mount	Die	-65°C ~ 175°C
CD486B DIODE GEN PURP 250V 200MA DIE Microchip Technology	8,318	RFQ	Datasheet	-	Die	Tape & Reel (TR)	Active	Standard	250 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 225 V	-	-	-	Surface Mount	Die	-65°C ~ 175°C
1N5818/TR DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	2,611	RFQ	-	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Active	Schottky	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	-	-	Through Hole	DO-204AL (DO-41)	-55°C ~ 150°C
1N5818-1/TR DIODE SCHOTTKY 30V 1A DO41 Microchip Technology	2,104	RFQ	-	-	DO-204AL, DO-41, Axial	Tape & Reel (TR)	Obsolete	Schottky	30 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	-	-	Through Hole	DO-41	-
60CPF12 DIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	8,688	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	Standard	1200 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
60EPF12 DIODE GP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	3,130	RFQ	Datasheet	-	TO-247-2	Tube	Obsolete	Standard	1200 V	60A	1.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	480 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
85EPF04 DIODE GEN PURP 400V 85A POWIRTAB Vishay General Semiconductor - Diodes Division	3,584	RFQ	Datasheet	-	PowerTab™, PowIRtab™	Bulk	Obsolete	Standard	400 V	85A	1.3 V @ 85 A	Fast Recovery =< 500ns, > 200mA (Io)	190 ns	100 µA @ 400 V	-	-	-	Chassis Mount	PowIRtab™	-40°C ~ 150°C
1N3957 DIODE GEN PURP 1KV 1A AXIAL Microchip Technology	6,529	RFQ	Datasheet	-	A, Axial	Bulk	Discontinued at Digi-Key	Standard	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	-	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N6642US/TR DIODE GEN PURP 75V 300MA D-5D Microchip Technology	3,896	RFQ	-	-	SQ-MELF, D	Tape & Reel (TR)	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	40pF @ 0V, 1MHz	Military	MIL-PRF-19500/578	Surface Mount	D-5D	-65°C ~ 175°C

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