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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
JAN1N4946 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2,026	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	-	Military	MIL-PRF-19500/360	Through Hole	A, Axial	-65°C ~ 175°C
1N6643 DIODE GEN PURPOSE Microchip Technology	2,257	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 50 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JAN1N5621/TR DIODE GEN PURP 800V 1A Microchip Technology	3,206	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	500 nA @ 800 V	-	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
VS-97PF120 DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	7,258	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1200 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
VS-97PFR120 DIODE GP REV 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	8,671	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	1200 V	95A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-55°C ~ 180°C
E4D10120G SIC, SCHOTTKY DIODE, 10A, 1200V, Wolfspeed, Inc.	3,585	RFQ	-	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
E4D10120E SIC, SCHOTTKY DIODE, 10A, 1200V, Wolfspeed, Inc.	5,912	RFQ	-	-	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N3612 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	8,804	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 300 V	-	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	8,285	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N5419/TR DIODE GEN PURP 500V 3A B SQ-MELF Microchip Technology	5,014	RFQ	Datasheet	-	SQ-MELF, B	Tape & Reel (TR)	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 500 V	-	-	-	Surface Mount	B, SQ-MELF	-65°C ~ 175°C
VS-40HF140 DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division	6,213	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1400 V	40A	1.5 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 160°C
STPSC10H065DLF DIODE SIL CARB 650V 10A PWRFLAT STMicroelectronics	6,027	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	595pF @ 0V, 1MHz	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
1N5803/TR DIODE GEN PURP 75V 1A Microchip Technology	9,496	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	75 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 75 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JAN1N4249/TR DIODE GEN PURP 1KV 1A Microchip Technology	3,399	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 1 V	-	Military	MIL-PRF-19500/286	Through Hole	A, Axial	-65°C ~ 175°C
1N5805/TR DIODE GEN PURP 125V 1A Microchip Technology	2,507	RFQ	-	-	A, Axial	Tape & Reel (TR)	Active	Standard	125 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 125°C
1N5804/TR DIODE GEN PURP 100V 1A Microchip Technology	8,341	RFQ	Datasheet	-	A, Axial	Tape & Reel (TR)	Active	Standard	100 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-41HF10 DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	8,181	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	100 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
VS-41HFR10 DIODE GP REV 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	5,883	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	100 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 100 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
SCS220AEC DIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor	2,874	RFQ	Datasheet	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-247	175°C (Max)
1N646UR-1/TR SIGNAL OR COMPUTER DIODE Microchip Technology	2,723	RFQ	Datasheet	-	DO-213AA	Tape & Reel (TR)	Active	Standard	300 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	200 nA @ 300 V	-	-	-	Surface Mount	DO-213AA	-65°C ~ 175°C

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