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STMicroelectronics STPSC806G-TR

Part No.:
STPSC806G-TR
Manufacturer:
STMicroelectronics
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTPSC806G-TR.pdf
Description:
DIODE SIL CARBIDE 600V 8A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,255

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Product details

Overview

STPSC806G-TR from STMicroelectronics is a 650 V, 8 A silicon carbide (SiC) Schottky diode in a TO-220AC package, featuring zero reverse recovery charge (Qrr = 0), low forward voltage drop (VF = 1.5 V @ 8 A), and operation up to 175 °C - used in high-frequency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the STPSC806G-TR datasheet, STPSC806G-TR pinout, STPSC806G-TR application, or STPSC806G-TR equivalent, key selection criteria include unipolar conduction behavior, thermal robustness under repetitive surge current (IFSM = 40 A), and absence of minority-carrier storage delay in hard-switched topologies.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and soft-recovery FREDs in continuous conduction mode (CCM) boost PFC circuits. Its wide bandgap enables stable VF over temperature and eliminates reverse recovery losses that dominate efficiency at >100 kHz switching frequencies.

The device operates with no minority-carrier injection, eliminating tail current and associated EMI generation during turn-off. Its junction capacitance (Cj = 320 pF @ 400 V) and low stored charge support snubberless operation in resonant LLC and phase-shifted full-bridge converters.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - supports 400 V AC input rectified to ~565 V DC with 15% margin for line surges in universal-input PFC designs.
IF(AV)8 A - rated average forward current at case temperature TC = 135 °C, enabling compact heatsink sizing in forced-air-cooled 1–2 kW systems.
VF1.5 V @ 8 A - reduces conduction loss by ~40% vs. comparable 600 V Si FRD, directly improving PFC stage efficiency by 0.5–0.8%.
Qrr0 C - eliminates reverse recovery loss and associated MOSFET turn-on stress, enabling reliable operation with GaN or SiC MOSFETs.
Tj(max)175 °C - allows sustained operation in high-ambient environments (e.g., enclosed solar inverters) without derating below 8 A.
IFSM40 A (10 ms half-sine) - withstands inrush and overload transients in grid-tied inverters without bond wire fusing.

Pinout & Package

TO-220AC package: single-sided heat sink mounting, isolated tab (cathode), axial lead configuration. No internal isolation between die and case - mechanical mounting must ensure electrical insulation if cathode is not at ground potential.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Forward current entry pointConnected to AC side of boost inductor in PFC; requires low-inductance layout to minimize voltage overshoot during diode turn-off.
Cathode (Tab)Forward current exit / thermal pathElectrically active terminal; must be insulated from heatsink unless system reference is cathode; primary thermal interface for power dissipation.

Key Features

FeatureDesign Value
Zero QrrEliminates reverse recovery-related switching loss and EMI, enabling clean hard-switching with SiC/GaN FETs without snubbers.
Positive VF tempcoEnables inherent current sharing in parallel configurations without external ballasting resistors or current-sharing transformers.
175 °C max junction tempSupports operation in sealed enclosures or high-ambient industrial environments without active cooling derating penalties.
Low Cj (320 pF @ 400 V)Reduces capacitive turn-on loss in synchronous rectification and minimizes displacement current in high-dV/dt gate drive layouts.

Applications

Industrial SMPS PFC StageSolar String Inverter DC/DC Stage

Use Scenario: Boost PFC front-end operating at 65–100 kHz with 400 V DC bus in 1.5 kW telecom rectifier.

IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in continuous conduction mode (CCM) boost converter.

Use Value: Reduces total PFC loss by 3.2 W vs. Si FRD, lowering heatsink volume by 35% while maintaining <15 °C ΔT rise.

Use Scenario: Isolated DC/DC stage in 3 kW string inverter, stepping 600–1000 V DC down to 400 V for H-bridge inverter stage.

IC Role / Device Role / Timing Role: Secondary-side rectifier in phase-shifted full-bridge topology.

Use Value: Enables snubberless operation at 120 kHz, reducing component count and improving reliability over 10-year field life.

EV Onboard Charger (OBC)UPS High-Frequency Rectification

Use Scenario: Bidirectional AC/DC + DC/DC stage in 6.6 kW OBC, where same diode serves both PFC and isolation rectification.

IC Role / Device Role / Timing Role: Dual-role SiC diode in interleaved totem-pole PFC and CLLC resonant rectifier.

Use Value: Eliminates need for separate Si and SiC diodes, simplifying BOM and enabling shared thermal design across both stages.

Use Scenario: High-efficiency rectification in double-conversion online UPS with 20 kHz IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Output rectifier in high-frequency transformer secondary winding.

Use Value: Reduces rectifier conduction loss by 55% vs. Si fast diode, improving full-load efficiency from 94.2% to 95.6%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D08060E (Wolfspeed)Same 650 V/8 A rating; higher VF (1.7 V @ 8 A); TO-220-2L package with non-isolated tab.Requires insulated mounting hardware; less suitable for cathode-grounded PFC where tab connects to heatsink.Select when cost sensitivity outweighs 0.2 V VF penalty and thermal interface is fully controlled.
FFSD0865A (onsemi)650 V/8 A; lower IFSM (32 A); higher Cj (380 pF @ 400 V); TO-220AC with isolated tab.Marginally lower surge capability limits use in high-inrush solar inverters; higher capacitance increases turn-on loss in resonant topologies.Prefer only when existing qualification data exists for FFSD0865A in identical thermal/mechanical layout.

Compared with C3D08060E and FFSD0865A, STPSC806G-TR offers the lowest VF among TO-220AC-packaged 650 V/8 A SiC diodes and maintains the highest IFSM, making it optimal for high-reliability, high-efficiency PFC and DC/DC stages where thermal headroom and surge immunity are critical.

Availability

STPSC806G-TR is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, EV onboard chargers, and UPS systems requiring stable component supply with guaranteed long-term manufacturability and consistent parametric performance.

Supply support for STPSC806G-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

The STPSC series belongs to ST's high-voltage SiC power diode product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in renewable energy and industrial power systems.

FAQ

Is STPSC806G-TR suitable for use in automotive-grade applications?

No - STPSC806G-TR is not qualified to AEC-Q101 and lacks automotive-specific screening, traceability, or extended temperature validation. ST offers separate AEC-Q101-qualified SiC diodes (e.g., STPSC8H065DLF) for traction and on-board charger applications requiring automotive compliance.

Can STPSC806G-TR be paralleled for higher current handling?

Yes - its positive temperature coefficient of forward voltage enables natural current sharing. Parallel operation requires matched layout symmetry, identical thermal paths, and individual gate-drive decoupling for any co-packaged FETs; ST recommends ≤3 devices in parallel without active current balancing.

What is the maximum recommended PCB copper area for thermal relief on the cathode tab?

ST specifies minimum 400 mm² of 2-oz copper (≥70 µm thick) directly under the tab, thermally connected via ≥6 thermal vias (0.3 mm diameter, filled or plated) to inner-layer ground or thermal planes. Larger copper areas improve steady-state θjc but yield diminishing returns beyond 600 mm².

Does STPSC806G-TR require a gate resistor or snubber network?

No - as a unipolar Schottky diode, it has no gate and exhibits no reverse recovery. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode–cathode may be used to damp high-frequency ringing caused by stray inductance in high-dI/dt layouts, especially in >100 kHz topologies.

STPSC806G-TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
100 µA @ 600 V
Capacitance @ Vr, F:
450pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Operating Temperature - Junction:
-40°C ~ 175°C

STPSC806G-TR FAQ

1.How can I place an order for STPSC806G-TR through Aetrix?

Please submit a Request for Quotation (RFQ) for STPSC806G-TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STPSC806G-TR reliable?

The price and inventory of STPSC806G-TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STPSC806G-TR is usually 5 days.

3.What payment methods are accepted for STPSC806G-TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STPSC806G-TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STPSC806G-TR?

STPSC806G-TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STPSC806G-TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STPSC806G-TR?

For technical support, including STPSC806G-TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STPSC806G-TR requirements.

6.How does Aetrix verify that STPSC806G-TR is sourced from the original manufacturer or authorized distributors?

All STPSC806G-TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STPSC806G-TR meets industry standards.

7.What is the process for return or replacement of STPSC806G-TR?

All STPSC806G-TR units undergo pre-shipment inspection (PSI). If there is an issue with STPSC806G-TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STPSC806G-TR part is unused and in its original packaging.

Return procedure for STPSC806G-TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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