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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SICPT30120YB-BP SCHOTTKY DIODES Micro Commercial Co	3,148	RFQ	Datasheet	-	TO-247-2	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	30A	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	1722pF @ 0V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
SCS215KGHRC DIODE SIL CARB 1.2KV 15A TO220AC Rohm Semiconductor	2,391	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	15A	1.6 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	300 µA @ 1200 V	790pF @ 1V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	175°C (Max)
JANTXV1N5618US DIODE GEN PURP 600V 1A D-5A Microchip Technology	8,511	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Military	MIL-PRF-19500/427	Surface Mount	D-5A	-65°C ~ 200°C
JANTXV1N6642U DIODE GEN PURP 100V 300MA D-5D Microchip Technology	9,383	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	100 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	500 nA @ 100 V	-	Military	MIL-PRF-19500/578	Surface Mount	D-5D	-65°C ~ 175°C
1N5803US DIODE GEN PURP 80V 1A D-5A Microchip Technology	3,380	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	80 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 75 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
1N5805US DIODE GEN PURP 135V 1A D-5A Microchip Technology	2,755	RFQ	-	-	SQ-MELF, A	Bulk	Active	Standard	135 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	-	-	Surface Mount	D-5A	-65°C ~ 175°C
JANTXV1N5550 DIODE GEN PURP 200V 5A AXIAL Microchip Technology	9,635	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5189/TR DIODE GEN PURP 500V 3A B AXIAL Microchip Technology	5,911	RFQ	-	-	B, Axial	Tape & Reel (TR)	Active	Standard	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	2 µA @ 500 V	-	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N5188/TR DIODE GEN PURP 400V 3A AXIAL Microchip Technology	6,652	RFQ	Datasheet	-	B, Axial	Tape & Reel (TR)	Active	Standard	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	2 µA @ 400 V	-	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-65°C ~ 175°C
JAN1N3595AUS DIODE GEN PURP 125V 150MA DO35 Microchip Technology	5,525	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Standard	125 V	150mA	920 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	2 nA @ 125 V	-	Military	MIL-PRF-19500/241	Through Hole	DO-204AH (DO-35)	-65°C ~ 175°C
JAN1N3595US DIODE GEN PURP 125V 4A B SQ-MELF Microchip Technology	5,671	RFQ	-	-	SQ-MELF, B	Bulk	Active	Standard	125 V	4A	1 V @ 200 mA	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Military	MIL-PRF-19500/241	Surface Mount	B, SQ-MELF	-65°C ~ 150°C
JANTXV1N5186 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	9,779	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 100 V	-	Military	MIL-PRF-19500/424	Through Hole	B, Axial	-65°C ~ 175°C
VS-70HFL40S05 DIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division	5,884	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	400 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-70HFL60S05 DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	6,084	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	600 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
VS-70HFLR60S05 DIODE GP REV 600V 70A DO203AB Vishay General Semiconductor - Diodes Division	2,769	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	600 V	70A	1.85 V @ 219.8 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-40°C ~ 125°C
129NQ135 DIODE SCHOTTKY 135V 120A D-67 Vishay General Semiconductor - Diodes Division	9,595	RFQ	Datasheet	-	D-67 HALF-PAK	Bulk	Obsolete	Schottky	135 V	120A	1.07 V @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 135 V	3000pF @ 5V, 1MHz	-	-	Chassis Mount	D-67 HALF-PAK	-
JANTXV1N5619US DIODE GEN PURP 600V 1A D-5A Microchip Technology	5,665	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	-	Military	MIL-PRF-19500/429	Surface Mount	D-5A	-65°C ~ 175°C
1N6641US DIODE GEN PURP 50V 300MA D-5D Microchip Technology	5,544	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	50 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	100 nA @ 50 V	-	-	-	Surface Mount	D-5D	-65°C ~ 175°C
JANTX1N5802 DIODE GEN PURP 50V 1A AXIAL Microchip Technology	8,722	RFQ	-	-	A, Axial	Bulk	Active	Standard	50 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
1N5417US DIODE GEN PURP 200V 3A D5B Microchip Technology	8,980	RFQ	Datasheet	-	SQ-MELF, E	Bulk	Active	Standard	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	-	-	Surface Mount	D-5B	-65°C ~ 175°C

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