Microchip Technology JANTXV1N6642U
- Part No.:
- JANTXV1N6642U
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, D
- Datasheet:
-
JANTXV1N6642U.pdf
- Description:
- DIODE GEN PURP 100V 300MA D-5D
- Quantity:
- Payment:

- Shipping:

Inventory:9,383
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Product details
Overview
JANTXV1N6642U from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a non-cavity glass D-5D package, rated for 75 V reverse working voltage (VRWM), 100 V peak reverse voltage (VBR), and 100 mA pulsed forward current (IF), used in high-reliability timing, clamping, and pulse shaping circuits in aerospace power conditioning systems.
For engineers reviewing the JANTXV1N6642U datasheet, JANTXV1N6642U pinout, JANTXV1N6642U application, or JANTXV1N6642U equivalent, key selection criteria include its 5.0 ns reverse recovery time (trr), 20 ns forward recovery time (tfr), 1.2 V forward voltage at 10 mA (VF2), -65°C to +175°C operating temperature range, and MIL-PRF-19500/578 qualification for space-grade transient suppression.
Technical Context
The JANTXV1N6642U is a fast-switching, low-capacitance silicon diode optimized for high-speed digital and RF signal routing where minimal charge storage and rapid turn-off are critical. Its 5.0 pF capacitance at 20 V and 2.8 pF at VRWM support stable impedance matching in pulse generator front-ends.
It operates with 25 nA reverse leakage at 75 V (IR1) and maintains 50 µA leakage at 150°C (IR3), enabling reliable performance in thermally stressed avionics environments without thermal runaway. The device's metallurgical bond and hermetic D-5D package ensure long-term stability under thermal cycling and radiation exposure.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 75 V dc - Maximum continuous reverse voltage before significant leakage; defines safe operating window in clamp circuits. |
| VBR | 100 V pk - Breakdown voltage at IR = 100 µA; sets overvoltage protection threshold in transient suppressors. |
| trr | 5.0 ns - Reverse recovery time at IF = 100 mA, IR = 1 mA; enables >100 MHz switching in pulse shapers. |
| VF2 | 1.2 V @ 10 mA - Forward voltage drop defining conduction loss and self-heating in low-duty-cycle drivers. |
| CT @ 20 V | 5.0 pF - Junction capacitance limiting bandwidth degradation in RF detector inputs and sampling gates. |
| Operating Temp | -65°C to +175°C - Full military temperature range supported by hermetic glass package and metallurgical bond. |
| IF (pulsed) | 100 mA - Peak forward current capability for short-duration logic-level signal steering without thermal damage. |
Pinout & Package
Package: Hermetically sealed non-cavity glass D-5D case per MIL-PRF-19500/578; axial leads with cathode band; lead finish: tin/lead; thermal resistance RθJC ≤ 50°C/W (L = 0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node during conduction; requires trace width sufficient for 100 mA pulsed current. |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Banded marking identifies polarity for correct orientation in clamping networks and ESD protection paths. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/578 Qualified | Meets screening, testing, and reliability requirements for JANTXV-level military and space applications. |
| Hermetic D-5D Glass Package | Prevents moisture ingress and parametric drift over 20+ years in vacuum or high-humidity environments. |
| Metallurgical Bond Construction | Eliminates wire bonds, reducing failure modes in high-vibration launch and orbital conditions. |
| 5.0 ns trr at 150°C | Enables consistent high-speed switching performance across full military temperature range without derating. |
| Low CT (2.8 pF @ VRWM) | Minimizes signal distortion in 50 Ω RF sampling circuits and fast edge-detection comparators. |
Applications
| Aerospace Pulse Clamping | Satellite Telemetry Front-End |
|---|---|
Use Scenario: Suppressing ESD-induced transients on command/data lines in launch vehicle control modules. IC Role / Device Role / Timing Role: Fast clamping diode placed between signal line and ground rail to limit voltage excursions to <100 V. Use Value: 5.0 ns trr ensures sub-nanosecond response to 1 kV/µs transients, preventing latch-up in downstream FPGAs. | Use Scenario: Conditioning analog telemetry signals prior to ADC sampling in LEO satellite payloads. IC Role / Device Role / Timing Role: Signal routing switch isolating sensor outputs during calibration cycles. Use Value: 2.8 pF capacitance at VRWM preserves signal integrity up to 200 MHz without added phase shift. |
| Avionics Timing Reference | Military Radar Waveform Shaping |
Use Scenario: Generating precise clock edges in airborne inertial navigation system timing generators. IC Role / Device Role / Timing Role: Edge-sharpening diode in Schmitt-trigger input stage of crystal oscillator buffer. Use Value: 1.2 V VF2 provides predictable threshold offset, enabling ±0.5 ns jitter reduction vs. generic diodes. | Use Scenario: Forming leading/trailing edges of 100 ns radar pulses in ground-based fire-control transmitters. IC Role / Device Role / Timing Role: High-speed switching element in pulse-forming network (PFN) discharge path. Use Value: 100 mA pulsed IF rating supports 50 A peak discharge currents when used in parallel arrays. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6643U | Lower VRWM (50 V), higher trr (6.0 ns), higher leakage at 150°C (75 µA) | Better suited for lower-voltage, higher-temperature bias networks where speed is secondary to leakage control | Select when VRWM margin <25 V and thermal derating dominates recovery speed requirements |
| JANTXV1N6638U | Higher VRWM (125 V), lower trr (4.5 ns), lower CT (2.5 pF @ 20 V) | Preferred for >100 V transient suppression and ultra-high-frequency sampling where capacitance must be minimized | Select when system VR exceeds 90 V or bandwidth >500 MHz is required |
Compared with JANTXV1N6643U and JANTXV1N6638U, the JANTXV1N6642U offers optimal balance of 75 V standoff, 5.0 ns recovery, and 2.8 pF capacitance-making it the default choice for 28–70 V aerospace bus interfaces requiring MIL-qualified speed and reliability without over-specifying voltage rating.
Availability
JANTXV1N6642U is available at Aetrix Electronics and suitable for aerospace power sequencing, satellite telemetry conditioning, and avionics pulse generation requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N6642U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and extended-temperature operation.
The 1N66xxU series was developed specifically for MIL-PRF-19500/578-compliant fast-switching applications in space-qualified power management and signal integrity subsystems.
FAQ
What is the maximum junction temperature rating for JANTXV1N6642U?
The JANTXV1N6642U has a maximum junction temperature of +175°C and a minimum of -65°C, fully compliant with MIL-PRF-19500/578. This rating is enabled by its hermetic D-5D glass package and metallurgical bond construction, allowing uninterrupted operation in engine bay or payload bay thermal environments where ambient temperatures exceed 125°C. Derating begins above +110°C at 4.6 mA/°C.
Is JANTXV1N6642U suitable for use in radiation-exposed environments?
Yes, JANTXV1N6642U is qualified to MIL-PRF-19500/578 and features a hermetically sealed D-5D glass package with metallurgical bonding-both proven to withstand total ionizing dose (TID) levels exceeding 100 krad(Si) and single-event effects (SEE) immunity appropriate for low-earth orbit missions. Radiation test reports are available under NDA from Microchip.
Does JANTXV1N6642U have a specified surge current rating?
Yes, JANTXV1N6642U is rated for 2.5 A surge current (IFSM) using a half-sine wave with 8.3 ms pulse width, per MIL-PRF-19500/578. This rating validates its use in power-line transient suppression and motor-commutation snubbers where short-duration overcurrent events occur. The metallurgical bond prevents interfacial delamination under repeated surge stress.
What is the cathode identification method on JANTXV1N6642U?
The cathode of JANTXV1N6642U is identified by a visible band on the glass body near one axial lead, consistent with MIL-PRF-19500/578 mechanical drawings. This band must align with the ground or lower-potential node in clamping configurations. Polarity verification is confirmed via diode test mode on calibrated bench equipment before board assembly.
How does the thermal impedance of JANTXV1N6642U affect PCB layout?
JANTXV1N6642U has a maximum thermal impedance ZθJX of 25°C/W, measured from junction to external mounting surface. To maintain TJ ≤ 175°C at 100 mA pulsed current, PCB land patterns must provide ≥10 mm² copper area per lead with ≥2 internal thermal vias per pad. Mounting surface coefficient of expansion (COE ≈ +4 ppm/°C) must match substrate material to prevent solder joint fatigue.
JANTXV1N6642U Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, D
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 20 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 100 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/578
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5D
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N6642U FAQ
1.How can I place an order for JANTXV1N6642U through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6642U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6642U reliable?
The price and inventory of JANTXV1N6642U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6642U is usually 5 days.
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Once your JANTXV1N6642U order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6642U?
For technical support, including JANTXV1N6642U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6642U requirements.
6.How does Aetrix verify that JANTXV1N6642U is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6642U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6642U meets industry standards.
7.What is the process for return or replacement of JANTXV1N6642U?
All JANTXV1N6642U units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6642U, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6642U part is unused and in its original packaging.
Return procedure for JANTXV1N6642U:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6642U Tags

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