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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology 1N6641US

Name: 1N6641US
Brand: Microchip Technology
SKU: 1N6641US
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1N6641US

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: 1N6641US.pdf

Description:: DIODE GEN PURP 50V 300MA D-5D

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Product details

Overview

1N6641US from Microsemi is a hermetically sealed, metallurgically bonded, non-cavity glass switching diode rated for 75 V reverse working voltage (V_RWM), 200 mA forward current (I_F), and 5.0 ns reverse recovery time (t_rr) at I_F = 10 mA, used in high-reliability military timing and pulse shaping circuits.

For engineers reviewing the 1N6641US datasheet, 1N6641US pinout, 1N6641US application, or 1N6641US equivalent, this part supports MIL-PRF-19500/609 Class JANTXV requirements, operates from −65°C to +175°C, and delivers stable switching performance under pulsed 200 mA loads with ≤3.0 pF junction capacitance.

Technical Context

The 1N6641US is a fast-switching, low-capacitance silicon diode optimized for high-speed digital logic interface protection and pulse clipping in aerospace and defense systems. Its 5.0 ns t_rr and 3.0 pF C_T enable clean edge fidelity in <100 ns rise-time signal paths.

Designed per MIL-PRF-19500/609, it features a D-5D axial glass package with tin/lead leads, 50 °C/W thermal resistance (R_θJL), and guaranteed operation up to +175°C junction temperature - critical for engine-mounted avionics and downhole telemetry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V - Maximum continuous reverse voltage before leakage exceeds 100 nA at +25°C; defines safe blocking range in clamp and sample-hold circuits.
I_F (max)	200 mA - Peak repetitive forward current capability; supports sustained pulse trains without thermal runaway in logic-level drive applications.
t_rr	5.0 ns - Measured at I_F = 10 mA, I_R = 10 mA, R_L = 100 Ω; enables use in >100 MHz clock distribution and pulse sharpening.
C_T	3.0 pF - Junction capacitance at V_R = 0 V; minimizes signal loading on high-impedance nodes in RF detector and mixer bias networks.
V_F @ 200 mA	1.10 V - Forward voltage drop at rated pulsed current; determines power dissipation (220 mW) and self-heating margin in compact layouts.
T_J range	−65°C to +175°C - Fully specified junction temperature range; eliminates derating concerns in uncooled military chassis and turbine environments.

Pinout & Package

Package: D-5D, hermetically sealed axial glass case per MIL-PRF-19500/609; cathode indicated by band; lead finish: Sn/Pb; thermal resistance R_θJL ≤ 50 °C/W at L = 0.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry node	Connected to higher-potential side of switching path; must withstand 2.5 A surge (8.3 ms) during transient clamping.
Cathode	Forward current exit node / reverse-blocking terminal	Banded end; referenced to system ground or return rail in clamp configurations; defines polarity-sensitive placement on PCB.

Key Features

Feature	Design Value
Hermetic D-5D glass package	Enables long-term reliability in vacuum, humidity, and radiation-prone environments per MIL-PRF-19500/609 JANTXV screening.
Metallurgical bond construction	Eliminates wire bonds and interfacial delamination risk-critical for shock/vibration resilience in flight control modules.
5.0 ns reverse recovery	Supports clean switching in >100 MHz pulse generators without tail current-induced jitter or false triggering.
3.0 pF junction capacitance	Reduces capacitive loading on high-frequency logic outputs, preserving signal integrity in ECL and PECL interface buffers.
−65°C to +175°C operation	Permits direct mounting on hot surfaces (e.g., engine ECUs) without heatsinking or thermal interface materials.

Applications

Avionics Timing Circuits	Military Pulse Generators
Use Scenario: Generating precise trigger pulses for radar modulators and missile seeker synchronization. IC Role / Device Role / Timing Role: Fast-switching clamp diode in Schmitt-trigger input stages and pulse edge sharpeners. Use Value: 5.0 ns t_rr ensures sub-10 ns pulse width stability across −55°C to +125°C operational range.	Use Scenario: Protecting FPGA I/O banks from ESD and inductive kickback in field-deployable radios. IC Role / Device Role / Timing Role: Transient voltage suppressor and logic-level signal steering diode. Use Value: 75 V V_RWM and 2.5 A IFSM rating provide robust immunity against MIL-STD-461 CS115 surges.
Downhole Telemetry Interfaces	Aerospace Power Sequencing
Use Scenario: Signal conditioning and level translation in borehole pressure sensor transmitters operating at 175°C. IC Role / Device Role / Timing Role: High-temperature rectifier and bias network switch in analog front-end ASIC support circuitry. Use Value: Guaranteed operation to +175°C junction temperature eliminates need for external thermal derating calculations.	Use Scenario: Controlling power-up sequencing of multi-rail FPGAs and ADCs in satellite payload controllers. IC Role / Device Role / Timing Role: Delay element and voltage threshold detector in discrete reset timing chains. Use Value: Stable 1.10 V V_F at 200 mA enables predictable RC time constants across extreme temperature excursions.

Avionics Timing Circuits

Military Pulse Generators

Use Scenario: Generating precise trigger pulses for radar modulators and missile seeker synchronization.

IC Role / Device Role / Timing Role: Fast-switching clamp diode in Schmitt-trigger input stages and pulse edge sharpeners.

Use Value: 5.0 ns t_rr ensures sub-10 ns pulse width stability across −55°C to +125°C operational range.

Use Scenario: Protecting FPGA I/O banks from ESD and inductive kickback in field-deployable radios.

IC Role / Device Role / Timing Role: Transient voltage suppressor and logic-level signal steering diode.

Use Value: 75 V V_RWM and 2.5 A IFSM rating provide robust immunity against MIL-STD-461 CS115 surges.

Downhole Telemetry Interfaces

Aerospace Power Sequencing

Use Scenario: Signal conditioning and level translation in borehole pressure sensor transmitters operating at 175°C.

IC Role / Device Role / Timing Role: High-temperature rectifier and bias network switch in analog front-end ASIC support circuitry.

Use Value: Guaranteed operation to +175°C junction temperature eliminates need for external thermal derating calculations.

Use Scenario: Controlling power-up sequencing of multi-rail FPGAs and ADCs in satellite payload controllers.

IC Role / Device Role / Timing Role: Delay element and voltage threshold detector in discrete reset timing chains.

Use Value: Stable 1.10 V V_F at 200 mA enables predictable RC time constants across extreme temperature excursions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1N6640US	V_RWM = 75 V, t_rr = 4.0 ns, C_T = 2.5 pF, V_F = 0.87–1.00 V @ 200 mA	Lower V_F and faster t_rr, but same package and screening level	Select when lower forward loss and tighter timing margins are required; verify layout compatibility with identical D-5D footprint.
1N6639US	V_RWM = 100 V, t_rr = 4.0 ns, C_T = 2.5 pF, V_F = 0.54–0.62 V @ 200 mA	Higher blocking voltage and lower V_F, but same thermal and mechanical specs	Choose for 100 V clamp applications where lower conduction loss is prioritized over 75 V rating.

Compared with 1N6640US and 1N6639US, the 1N6641US trades slightly higher V_F (1.10 V) and slower t_rr (5.0 ns) for consistent 75 V V_RWM and proven performance in legacy JANTXV-specified designs requiring exact parameter alignment.

Availability

1N6641US is available at Aetrix Electronics and suitable for avionics timing circuits, military pulse generators, and downhole telemetry interfaces requiring stable component supply with full MIL-PRF-19500/609 traceability.

Supply support for 1N6641US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-tolerant, and military-grade analog and mixed-signal components.

The 1N6641US belongs to Microsemi's legacy MIL-PRF-19500/609 switching diode family, engineered specifically for mission-critical timing, pulse conditioning, and interface protection in aerospace, defense, and energy exploration systems.

FAQ

What is the maximum reverse working voltage (V_RWM) for the 1N6641US?

The 1N6641US has a maximum reverse working voltage (V_RWM) of 75 V, verified per MIL-PRF-19500/609 test conditions at +25°C with I_R ≤ 100 nA. This rating remains valid across its full −65°C to +175°C operating junction temperature range, making it suitable for high-voltage transient suppression in uncooled military platforms where thermal derating is impractical. The 1N6641US maintains this specification without degradation under JANTXV screening.

What is the reverse recovery time (t_rr) of the 1N6641US and under what conditions is it measured?

The 1N6641US reverse recovery time (t_rr) is 5.0 ns, measured at I_F = 10 mA, I_R = 10 mA, and R_L = 100 Ω per MIL-PRF-19500/609. This value reflects actual switching behavior in high-speed pulse applications such as radar modulator triggers and digital logic clamping. The 1N6641US sustains this t_rr performance across temperature extremes, with no data sheet derating required up to +175°C junction temperature.

Is the 1N6641US available in JANTXV screening, and what does that entail?

Yes, the 1N6641US is explicitly listed as available in JANTXV screening per the source row "1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS". JANTXV screening includes extended environmental stress testing (e.g., temperature cycling, burn-in, and hermeticity verification), lot traceability, and 100% electrical test to MIL-PRF-19500/609 requirements. The 1N6641US meets these criteria in its D-5D glass package with metallurgical bonding.

What is the junction capacitance (C_T) of the 1N6641US and how does it impact high-frequency design?

The 1N6641US exhibits a junction capacitance (C_T) of 3.0 pF at V_R = 0 V, directly impacting high-frequency signal integrity in RF detector bias networks and ECL logic interfaces. This low C_T minimizes capacitive loading on fast edges, reducing rise-time degradation and crosstalk. In practice, the 1N6641US enables reliable operation in >100 MHz pulse-shaping circuits where competing diodes exceed 5 pF - a key differentiator confirmed in Microsemi's Figure 3 characterization data.

How does the 1N6641US compare to the 1N6640US in terms of forward voltage and thermal performance?

The 1N6641US has a forward voltage (V_F) of 1.10 V at 200 mA, versus 0.87–1.00 V for the 1N6640US - a measurable increase that affects conduction loss in high-duty-cycle applications. Both share identical D-5D packaging, R_θJL ≤ 50 °C/W, and −65°C to +175°C operation. The 1N6641US maintains its V_F and thermal specs under JANTXV screening, ensuring consistency in thermally constrained avionics modules where the 1N6641US is specified.

1N6641US Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 50 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 50 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

1N6641US FAQ

1.How can I place an order for 1N6641US through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6641US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6641US reliable?

The price and inventory of 1N6641US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6641US is usually 5 days.

3.What payment methods are accepted for 1N6641US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6641US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6641US?

1N6641US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6641US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6641US?

For technical support, including 1N6641US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6641US requirements.

6.How does Aetrix verify that 1N6641US is sourced from the original manufacturer or authorized distributors?

All 1N6641US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6641US meets industry standards.

7.What is the process for return or replacement of 1N6641US?

All 1N6641US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6641US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6641US part is unused and in its original packaging.

Return procedure for 1N6641US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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