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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDM02G120C5XTMA1 DIODE SIL CARB 1.2KV 2A TO252-2 Infineon Technologies	8,389	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	2A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	182pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
VS-60EPU06-N3 DIODE GP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	5,459	RFQ	Datasheet	FRED Pt®	TO-247-2	Bulk	Active	Standard	600 V	60A	1.68 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	81 ns	50 µA @ 600 V	-	-	-	Through Hole	TO-247AC Modified	-55°C ~ 175°C
1N5614 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	8,128	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	2	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
1N5806 DIODE GEN PURP 150V 1A A AXIAL Microchip Technology	6,263	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	-	-	Through Hole	A, Axial	-65°C ~ 175°C
1N5416 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	4,931	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
JANTX1N5811 DIODE GEN PURP 150V 3A AXIAL Microchip Technology	22	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	150 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 150 V	-	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
DSEI60-06A DIODE GEN PURP 600V 60A TO247AD IXYS	3,867	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.8 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	200 µA @ 600 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
1N6640US DIODE GEN PURP 75V 300MA D-5D Microchip Technology	2,544	RFQ	Datasheet	-	SQ-MELF, D	Bulk	Active	Standard	75 V	300mA	1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	100 nA @ 50 V	-	-	-	Surface Mount	D-5D	-65°C ~ 175°C
1N6677UR-1 DIODE SCHOTTKY 40V 200MA DO213AA Microchip Technology	7,120	RFQ	Datasheet	-	DO-213AA	Bulk	Active	Schottky	40 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	50pF @ 0V, 1MHz	-	-	Surface Mount	DO-213AA	-65°C ~ 125°C
DH60-18A DIODE GEN PURP 1.8KV 60A TO247AD IXYS	9,968	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1800 V	60A	2.04 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	230 ns	200 µA @ 1800 V	32pF @ 1200V, 1MHz	-	-	Through Hole	TO-247AD	-55°C ~ 150°C
DSEI120-12A DIODE GEN PURP 1.2KV 75A TO247AD IXYS	2,480	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	75A	1.8 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	3 mA @ 1200 V	-	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
VS-85HF160 DIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division	4,496	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard	1600 V	85A	1.4 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	4.5 mA @ 1600 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 150°C
VS-T40HF40 DIODE GEN PURP 400V 40A D-55 Vishay General Semiconductor - Diodes Division	5,039	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	400 V	40A	-	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 400 V	-	-	-	Chassis Mount	D-55	-
VS-T40HFL100S05 DIODE GEN PURP 1KV 40A D-55 Vishay General Semiconductor - Diodes Division	9,709	RFQ	Datasheet	-	D-55 T-Module	Bulk	Active	Standard	1000 V	40A	-	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	100 µA @ 1000 V	-	-	-	Chassis Mount	D-55	-
VS-VSKE91/16 DIODE GP 1.6KV 100A ADD-A-PAK Vishay General Semiconductor - Diodes Division	1	RFQ	Datasheet	-	ADD-A-PAK (3)	Bulk	Active	Standard	1600 V	100A	-	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1600 V	-	-	-	Chassis Mount	ADD-A-PAK®	-40°C ~ 150°C
VS-400U120D DIODE GP 1.2KV 400A DO205AB Vishay General Semiconductor - Diodes Division	7,430	RFQ	Datasheet	-	DO-205AB, DO-9, Stud	Bulk	Last Time Buy	Standard	1200 V	400A	1.62 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	15 mA @ 1200 V	-	-	-	Stud Mount	DO-205AB (DO-9)	-40°C ~ 200°C
LSIC2SD170B50 DIODE SIL CARB 1.7KV 135A TO247 Littelfuse Inc.	6,021	RFQ	Datasheet	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	135A	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1700 V	3900pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
MEO500-06DA DIODE GEN PURP 600V 514A Y4-M6 IXYS	5,818	RFQ	Datasheet	-	Y4-M6	Box	Active	Standard	600 V	514A	1.52 V @ 520 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	24 mA @ 600 V	-	-	-	Chassis Mount	Y4-M6	-40°C ~ 150°C
UGE3126AY4 DIODE GEN PURP 24KV 2A UGE IXYS	9,028	RFQ	Datasheet	-	UGE	Box	Active	Standard	24000 V	2A	18 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 24000 V	-	-	-	Chassis Mount	UGE	-

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