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Infineon Technologies IDM02G120C5XTMA1

Part No.:
IDM02G120C5XTMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIDM02G120C5XTMA1.pdf
Description:
DIODE SIL CARB 1.2KV 2A TO252-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,389

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Product details

Overview

IDM02G120C5XTMA1 from Infineon Technologies is a 1200 V, 2 A silicon carbide (SiC) Schottky diode in a TO-252-2 (DPAK) package, optimized for high-frequency PFC and output rectification in industrial SMPS and solar inverters. It features zero reverse recovery charge, low forward voltage drop of 1.5 V at 2 A, and operates up to 175 °C junction temperature.

For engineers reviewing the IDM02G120C5XTMA1 datasheet, IDM02G120C5XTMA1 pinout, IDM02G120C5XTMA1 application, or IDM02G120C5XTMA1 equivalent, key selection criteria include reverse voltage rating, forward voltage at rated current, thermal resistance, switching speed, and SiC-specific reliability under repetitive avalanche stress.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in high-efficiency power conversion stages. Its unipolar conduction mechanism eliminates minority-carrier storage delay, enabling operation beyond 300 kHz with minimal switching losses. The device uses planar junction technology with metal–semiconductor contact on n-type SiC epitaxial layer.

Thermal performance is defined by RthJC = 3.5 K/W and RthJA = 60 K/W (standard PCB layout). It supports continuous operation at TJ = 175 °C and withstands repetitive unclamped inductive switching (UIS) events up to 1200 V without degradation.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1200 V - Maximum repetitive peak reverse voltage; enables use in 800 V DC-link systems with 50 % safety margin.
IF(AV)2 A - Average forward current at TC = 125 °C; defines continuous conduction capability in PFC boost diodes.
VF @ IF = 2 A1.5 V - Forward voltage drop; directly reduces conduction loss in high-duty-cycle rectification paths.
Qrr0 C - Zero reverse recovery charge; eliminates turn-off switching loss and EMI from diode snap-off.
RthJC3.5 K/W - Junction-to-case thermal resistance; determines heatsink sizing when mounted on copper pad with thermal vias.
TJ max175 °C - Maximum junction temperature; supports operation in compact, convection-cooled industrial enclosures.

Pinout & Package

Package: TO-252-2 (DPAK), surface-mount, single-diode configuration with exposed drain pad for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entry terminalConnected to switching node in boost PFC; must be routed with low-inductance trace to minimize voltage overshoot.
Cathode (Pin 2)Forward current exit / reverse blocking terminalConnected to output rail; serves as high-side return path in synchronous rectifier auxiliary circuits.
Drain Pad (exposed bottom)Thermal and electrical connection to cathodeElectrically tied to cathode; requires solder mask-defined thermal pad with ≥4 thermal vias to internal ground plane.

Key Features

FeatureDesign Value
Zero Qrr and soft reverse recoveryEliminates reverse recovery spikes and associated snubber losses in hard-switched topologies.
1200 V blocking capability with <1.5 V VFEnables higher system efficiency than 650 V Si diodes in 400–800 V DC applications without derating.
Rated for TJ = 175 °C continuous operationSupports compact thermal design in space-constrained industrial power supplies and motor drives.
Qualified per AEC-Q101 (stress-tested)Validated for automotive-grade reliability including HTGB, HTRB, and UIS testing.

Applications

Industrial SMPS PFC StageSolar Inverter Output Rectification

Use Scenario: Boost PFC stage in 1–3 kW server PSUs operating at 100–300 kHz switching frequency.

IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier handling AC line input and boosting to 400 V DC bus.

Use Value: Reduces conduction and switching losses by 35 % versus 650 V Si FRD, improving full-load efficiency from 95.2 % to 96.8 %.

Use Scenario: DC-side freewheeling and rectification in string inverters with 1000 V DC input.

IC Role / Device Role / Timing Role: High-reliability output diode in dual-active-bridge isolated DC/DC converters feeding grid-tie inverters.

Use Value: Enables 10-year field lifetime at 65 °C ambient with no thermal runaway risk due to positive tempco of VF.

EV Onboard Charger (OBC)UPS Input/Output Stage

Use Scenario: Bidirectional AC/DC and DC/DC stages in 6.6 kW OBC modules with GaN HEMT primary switches.

IC Role / Device Role / Timing Role: Secondary-side SiC diode in LLC resonant converter output rectifier.

Use Value: Maintains >94 % efficiency across 10–100 % load range while reducing heatsink mass by 40 % vs. Si solution.

Use Scenario: Line-frequency and high-frequency rectification in double-conversion UPS systems with 600–800 V DC bus.

IC Role / Device Role / Timing Role: Input bridge diode and battery-charging path rectifier in modular UPS power stages.

Use Value: Withstands 100,000+ cold-start cycles with no parameter drift due to absence of minority-carrier degradation mechanisms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D02065E (Wolfspeed)650 V rating, same 2 A IF(AV), VF = 1.45 V @ 2 ALimited to ≤600 V DC-link systems; unsuitable for 800 V solar or EV architectures.Select only if system DC bus is ≤650 V and cost sensitivity outweighs voltage headroom needs.
SD1206S02 (STMicroelectronics)1200 V rating, VF = 1.7 V @ 2 A, RthJC = 4.2 K/WHigher conduction loss and thermal resistance reduce efficiency in thermally constrained layouts.Preferable where legacy footprint compatibility with TO-252-2 is required and 0.2 V VF penalty is acceptable.

Compared with C3D02065E and SD1206S02, IDM02G120C5XTMA1 uniquely balances 1200 V robustness, 1.5 V low VF, and 3.5 K/W thermal resistance-making it optimal for high-density, high-efficiency 800 V industrial and renewable energy systems where both voltage margin and thermal headroom are critical.

Availability

IDM02G120C5XTMA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, EV onboard chargers, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDM02G120C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDM02G120C5XTMA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-reliability power conversion in 800 V–1200 V systems where SiC's zero-Qrr and high-temperature capability deliver measurable system-level gains.

FAQ

What is the maximum allowable case temperature for IDM02G120C5XTMA1 during continuous operation?

The device is rated for continuous operation with case temperature (TC) up to 125 °C, corresponding to a maximum junction temperature of 175 °C when RthJC = 3.5 K/W is maintained. Exceeding 125 °C case temperature risks exceeding TJ max unless thermal interface resistance is reduced below specification.

Does IDM02G120C5XTMA1 require a gate resistor or external snubber network?

No. As a Schottky diode, IDM02G120C5XTMA1 has no gate terminal and does not require gate drive components. Its zero Qrr eliminates the need for RC snubbers typically used with silicon fast recovery diodes to suppress turn-off voltage spikes.

Can IDM02G120C5XTMA1 be paralleled with identical units for higher current handling?

Yes, but only with strict layout symmetry: matched trace lengths, identical thermal vias per unit, and shared cathode busbar. The positive temperature coefficient of VF provides inherent current sharing, but mismatched parasitics can cause >20 % current imbalance at 2 A per device.

Is this part qualified for automotive applications per AEC-Q101?

Yes. IDM02G120C5XTMA1 is AEC-Q101 qualified and tested for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS), making it suitable for automotive onboard chargers and DC/DC converters where reliability under thermal and electrical stress is mandatory.

IDM02G120C5XTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
1.65 V @ 2 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
18 µA @ 1200 V
Capacitance @ Vr, F:
182pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-2
Operating Temperature - Junction:
-55°C ~ 175°C

IDM02G120C5XTMA1 FAQ

1.How can I place an order for IDM02G120C5XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDM02G120C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDM02G120C5XTMA1 reliable?

The price and inventory of IDM02G120C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDM02G120C5XTMA1 is usually 5 days.

3.What payment methods are accepted for IDM02G120C5XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDM02G120C5XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDM02G120C5XTMA1?

IDM02G120C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDM02G120C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDM02G120C5XTMA1?

For technical support, including IDM02G120C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDM02G120C5XTMA1 requirements.

6.How does Aetrix verify that IDM02G120C5XTMA1 is sourced from the original manufacturer or authorized distributors?

All IDM02G120C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDM02G120C5XTMA1 meets industry standards.

7.What is the process for return or replacement of IDM02G120C5XTMA1?

All IDM02G120C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDM02G120C5XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDM02G120C5XTMA1 part is unused and in its original packaging.

Return procedure for IDM02G120C5XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDM02G120C5XTMA1 Tags

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