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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology 1N6640US

Name: 1N6640US
Brand: Microchip Technology
SKU: 1N6640US
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1N6640US

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: 1N6640US.pdf

Description:: DIODE GEN PURP 75V 300MA D-5D

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1N6640US from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D glass package, rated for 75 V reverse voltage, 50 mA average forward current, and 2.5 A surge current (8.3 ms), used in high-reliability timing, clamping, and pulse shaping circuits in aerospace and defense systems.

For engineers reviewing the 1N6640US datasheet, 1N6640US pinout, 1N6640US application, or 1N6640US equivalent, key selection criteria include its 75 V V_RWM, 0.82–1.00 V forward voltage at 50–200 mA, 4.0 ns reverse recovery time, -65°C to +175°C operating range, and MIL-PRF-19500/609 qualification for harsh-environment deployment.

Technical Context

The 1N6640US operates as a fast-switching, low-capacitance silicon diode optimized for high-speed digital and RF signal routing where minimal charge storage and tight thermal stability are critical. Its 2.5 pF capacitance at zero bias and 4.0 ns reverse recovery time support sub-10 ns edge transitions in pulse generators and sample-and-hold circuits.

Designed per MIL-PRF-19500/609, it features a non-cavity glass package with tin/lead leads, 50 °C/W junction-to-ambient thermal resistance (L = 0), and a +4 ppm/°C coefficient of expansion matched to ceramic and Kovar mounting surfaces for reliability under thermal cycling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V - Maximum continuous reverse working voltage before breakdown; defines safe clamping headroom in transient suppression.
I_F(AV)	50 mA - Average forward current rating; sets maximum DC conduction capability without derating up to +110°C.
V_F @ 50 mA	0.82–0.92 V - Forward voltage window at nominal operating current; determines power loss (≈41–46 mW) and logic-level compatibility.
T_RR	4.0 ns - Reverse recovery time; enables reliable operation in >100 MHz switching applications with minimal tail current.
C_T @ 0 V	2.5 pF - Junction capacitance at zero bias; limits capacitive loading on high-frequency signal paths and clock lines.
Operating Temp	-65°C to +175°C - Full military temperature range; supports engine bay, avionics, and downhole electronics without derating.
I_FSM	2.5 A (8.3 ms) - Non-repetitive surge current rating; withstands ESD transients and inductive kickback in relay drivers.

Pinout & Package

Package: D-5D hermetically sealed glass case (MIL-PRF-19500/609 compliant), axial lead, cathode indicated by band. Dimensions: D = 1.78–2.16 mm, G = 4.19–4.95 mm, F = 0.48–0.71 mm, lead finish = Sn/Pb.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential node in rectifier/clamp; must handle 50 mA DC and 2.5 A surge pulses.
Cathode (banded end)	Forward current exit / reverse blocking terminal	Provides 75 V standoff; polarity marking ensures correct orientation in series/parallel arrays and protection circuits.

Key Features

Feature	Design Value
MIL-PRF-19500/609 qualified	Meets rigorous screening, testing, and traceability requirements for space- and defense-critical applications.
Hermetic D-5D glass package	Eliminates moisture ingress and long-term parameter drift; certified for 10+ year shelf life and mission-critical uptime.
Metallurgical bond construction	Ensures stable junction characteristics across thermal cycling and mechanical shock environments.
+4 ppm/°C COE match	Minimizes thermally induced stress at solder joints when mounted on ceramic or Kovar substrates.
Low C_T & fast T_RR	2.5 pF and 4.0 ns enable clean edge fidelity in pulse-forming networks and high-speed sampling gates.

Applications

Pulse Generator Clamping	Digital Logic Level Shifting
Use Scenario: Clamping output of avalanche transistor pulse generator to prevent overshoot beyond 75 V rail. IC Role / Device Role / Timing Role: Fast-switching diode providing precise voltage limiting with sub-5 ns response. Use Value: Maintains pulse fidelity with <2.5 pF loading and prevents gate oxide damage in downstream CMOS drivers.	Use Scenario: Translating TTL logic levels (0–3.6 V) to ECL-compatible thresholds (−1.8 V to −0.8 V) in mixed-signal test equipment. IC Role / Device Role / Timing Role: Biased switching diode establishing reference offset with minimal forward-voltage variation over temperature. Use Value: Delivers stable 0.82–0.92 V drop from −5.2 V supply, enabling repeatable level shift across −65°C to +175°C.
RF Signal Routing Switch	Aerospace Power Supply Protection
Use Scenario: High-isolation RF switch core in L-band antenna diversity selector, operating up to 2 GHz. IC Role / Device Role / Timing Role: Low-capacitance, fast-recovery diode controlling signal path conduction state in PIN-like configuration. Use Value: 2.5 pF C_T and 4.0 ns T_RR ensure <−30 dB isolation at 1.5 GHz and minimal phase distortion during switching.	Use Scenario: Reverse-polarity protection and transient clamping in 28 V DC aircraft power distribution module. IC Role / Device Role / Timing Role: Primary surge-handling diode absorbing load dump spikes and lightning-induced transients. Use Value: Withstands 2.5 A I_FSM and maintains 75 V V_RWM integrity after repeated 8.3 ms surges per MIL-STD-704.

Pulse Generator Clamping

Digital Logic Level Shifting

Use Scenario: Clamping output of avalanche transistor pulse generator to prevent overshoot beyond 75 V rail.

IC Role / Device Role / Timing Role: Fast-switching diode providing precise voltage limiting with sub-5 ns response.

Use Value: Maintains pulse fidelity with <2.5 pF loading and prevents gate oxide damage in downstream CMOS drivers.

Use Scenario: Translating TTL logic levels (0–3.6 V) to ECL-compatible thresholds (−1.8 V to −0.8 V) in mixed-signal test equipment.

IC Role / Device Role / Timing Role: Biased switching diode establishing reference offset with minimal forward-voltage variation over temperature.

Use Value: Delivers stable 0.82–0.92 V drop from −5.2 V supply, enabling repeatable level shift across −65°C to +175°C.

RF Signal Routing Switch

Aerospace Power Supply Protection

Use Scenario: High-isolation RF switch core in L-band antenna diversity selector, operating up to 2 GHz.

IC Role / Device Role / Timing Role: Low-capacitance, fast-recovery diode controlling signal path conduction state in PIN-like configuration.

Use Value: 2.5 pF C_T and 4.0 ns T_RR ensure <−30 dB isolation at 1.5 GHz and minimal phase distortion during switching.

Use Scenario: Reverse-polarity protection and transient clamping in 28 V DC aircraft power distribution module.

IC Role / Device Role / Timing Role: Primary surge-handling diode absorbing load dump spikes and lightning-induced transients.

Use Value: Withstands 2.5 A I_FSM and maintains 75 V V_RWM integrity after repeated 8.3 ms surges per MIL-STD-704.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1N6639US	V_RWM = 100 V; V_F = 0.54–0.62 V @ 500 mA; T_RR = 4.0 ns; same D-5D package	Higher voltage rating but higher forward drop at low current; suited for 100 V clamp rails	Select when system requires >75 V reverse margin and can tolerate higher V_F at low I_F.
1N6641US	V_RWM = 75 V; V_F = 0.87–1.00 V @ 200 mA; T_RR = 5.0 ns; C_T = 3.0 pF; same D-5D package	Slower recovery and higher capacitance; optimized for higher-current, lower-frequency switching	Choose for 200 mA average loads where 1 ns slower recovery and 0.5 pF extra capacitance are acceptable.

Compared with 1N6640US, the 1N6639US offers higher reverse voltage at the cost of elevated forward voltage below 100 mA, while the 1N6641US trades 1 ns of speed and 0.5 pF of capacitance for improved conduction at 200 mA - making 1N6640US the optimal balance for 50–200 mA, <100 MHz, 75 V-class switching.

Availability

1N6640US is available at Aetrix Electronics and suitable for aerospace power sequencing, defense radar pulse conditioning, and industrial high-temperature sensor interface designs requiring stable component supply across extended lifecycle programs.

Supply support for 1N6640US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

The 1N6640US belongs to Microsemi's MIL-PRF-19500/609 qualified switching diode family, engineered for extreme-temperature operation, radiation tolerance, and long-term parametric stability in mission-critical electronics.

FAQ

What is the maximum reverse voltage rating for the 1N6640US?

The 1N6640US has a maximum reverse working voltage (V_RWM) of 75 V, verified per MIL-PRF-19500/609 test conditions. This rating applies continuously across its full operating temperature range of −65°C to +175°C and is measured at 10 μA leakage current. Exceeding 75 V risks irreversible breakdown and permanent device failure.

What is the forward voltage range of the 1N6640US at 50 mA?

The 1N6640US exhibits a forward voltage (V_F) between 0.82 V and 0.92 V when conducting 50 mA DC at +25°C ambient. This range reflects unit-to-unit process variation and remains stable across temperature due to its metallurgically bonded construction. At 100 mA, V_F rises to 0.87–1.00 V.

Is the 1N6640US suitable for high-frequency switching applications?

Yes, the 1N6640US supports high-frequency switching with a reverse recovery time (T_RR) of 4.0 ns and junction capacitance (C_T) of 2.5 pF at 0 V. These parameters enable reliable operation in circuits up to 100 MHz, including pulse shapers, RF switches, and fast-edge digital interfaces where minimal stored charge and low capacitive loading are essential.

What packaging standard does the 1N6640US comply with?

The 1N6640US complies with MIL-PRF-19500/609 and uses a hermetically sealed D-5D glass package with axial leads and tin/lead plating. Its dimensions meet strict military form factor requirements: body diameter 1.78–2.16 mm, length 4.19–4.95 mm, and lead diameter 0.48–0.71 mm. The cathode is marked by a visible band.

Does the 1N6640US require derating above a certain temperature?

Yes, the 1N6640US requires linear derating of forward current above +110°C ambient: 4.6 mA/°C reduction from the 50 mA rated value. At +175°C, the allowable average forward current drops to approximately 20 mA. Derating ensures junction temperature remains within safe limits given its 50 °C/W thermal resistance (L = 0).

1N6640US Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 75 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 4 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 50 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

1N6640US FAQ

1.How can I place an order for 1N6640US through Aetrix?

Please submit a Request for Quotation (RFQ) for 1N6640US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1N6640US reliable?

The price and inventory of 1N6640US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1N6640US is usually 5 days.

3.What payment methods are accepted for 1N6640US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1N6640US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1N6640US?

1N6640US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1N6640US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1N6640US?

For technical support, including 1N6640US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1N6640US requirements.

6.How does Aetrix verify that 1N6640US is sourced from the original manufacturer or authorized distributors?

All 1N6640US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1N6640US meets industry standards.

7.What is the process for return or replacement of 1N6640US?

All 1N6640US units undergo pre-shipment inspection (PSI). If there is an issue with 1N6640US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1N6640US part is unused and in its original packaging.

Return procedure for 1N6640US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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