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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

FET, MOSFET Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
CAS175M12BM3 MOSFET 2N-CH 1200V 228A Wolfspeed, Inc.	3	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	228A (Tc)	10.4mOhm @ 175A, 15V	3.6V @ 43mA	422nC @ 15V	12900pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
WAS175M12BM3 MOSFET 2N-CH 1200V 228A Wolfspeed, Inc.	4	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	228A (Tc)	10.4mOhm @ 175A, 15V	3.6V @ 43mA	422nC @ 15V	12900pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
BSM180D12P3C007 MOSFET 2N-CH 1200V 180A MODULE Rohm Semiconductor	13	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	180A (Tc)	-	5.6V @ 50mA	-	900pF @ 10V	880W	175°C (TJ)	-	-	Surface Mount	Module
MSCSM170TLM15CAG MOSFET 4N-CH 1700V 179A SP6C Microchip Technology	5	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
MSCSM70TLM07CAG MOSFET 4N-CH 700V 349A SP6C Microchip Technology	4	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	700V	349A (Tc)	6.4mOhm @ 120A, 20V	2.4V @ 12mA	645nC @ 20V	13500pF @ 700V	966W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
MSCSM70VR1M10CTPAG MOSFET 6N-CH 700V 238A Microchip Technology	2	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	700V	238A (Tc)	9.5mOhm @ 80A, 20V	2.4V @ 8mA	430nC @ 20V	9000pF @ 700V	674W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
CAS350M12BM3 MOSFET 2N-CH 1200V 417A Wolfspeed, Inc.	4	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	417A (Tc)	5.2mOhm @ 350A, 15V	3.6V @ 85mA	844nC @ 15V	25700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
MSCSM120TLM11CAG MOSFET 4N-CH 1200V 251A SP6C Microchip Technology	4	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9000pF @ 1000V	1042W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
MSCSM170TLM11CAG MOSFET 4N-CH 1700V 238A SP6C Microchip Technology	5	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1700V (1.7kV)	238A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1114W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
CAS530M12BM3 MOSFET 2N-CH 1200V 630A Wolfspeed, Inc.	4	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	630A (Tc)	3.47mOhm @ 530A, 15V	3.6V @ 127mA	1362nC @ 15V	38900pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	-
MSCSM120TLM08CAG MOSFET 4N-CH 1200V 333A SP6C Microchip Technology	6	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1200V (1.2kV)	333A (Tc)	7.8mOhm @ 80A, 20V	2.8V @ 4mA	928nC @ 20V	12000pF @ 1000V	1378W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
MSCSM120AM027CT6AG MOSFET 2N-CH 1200V 733A SP6C Microchip Technology	12	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	733A (Tc)	3.5mOhm @ 360A, 20V	2.8V @ 9mA	2088nC @ 20V	27000pF @1000V	2.97kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
BSM400D12P3G002 MOSFET 2N-CH 1200V 400A MODULE Rohm Semiconductor	2	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	400A (Tc)	-	5.6V @ 109.2mA	-	17000pF @ 10V	1570W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
MSCSM170HM087CAG MOSFET 4N-CH 1700V 238A Microchip Technology	9	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1700V (1.7kV)	238A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1.114kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM170AM039CT6AG MOSFET 2N-CH 1700V 523A Microchip Technology	2	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1700V (1.7kV)	523A (Tc)	5mOhm @ 270A, 20V	3.3V @ 22.5mA	1602nC @ 20V	29700pF @ 1000V	2.4kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
BSM300D12P3E005 MOSFET 2N-CH 1200V 300A MODULE Rohm Semiconductor	6	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	300A (Tc)	-	5.6V @ 91mA	-	14000pF @ 10V	1260W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
BSM400D12P2G003 MOSFET 2N-CH 1200V 400A MODULE Rohm Semiconductor	4	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	400A (Tc)	-	4V @ 85mA	-	38000pF @ 10V	2450W (Tc)	-40°C ~ 150°C (TJ)	-	-	-	Module
ADP360120W3 MOSFET 6N-CH 1200V 379A ACEPACK STMicroelectronics	6	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	6 N-Channel	-	1200V (1.2kV)	379A (Tj)	3.45mOhm @ 360A, 18V	4.4V @ 40mA	944nC @ 18V	28070pF @ 800V	704W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	ACEPACK
DMC2710UVQ-7 MOSFET N/P-CH 20V 1.1A SOT563 Diodes Incorporated	535	RFQ	Datasheet	-	SOT-563, SOT-666	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	-	20V	1.1A (Ta), 800mA (Ta)	400mOhm @ 600mA, 4.5V, 700mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	460mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-563
PJT7828_R1_00001 MOSFET 2N-CH 30V 0.3A SOT363 Panjit International Inc.	195	RFQ	Datasheet	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	30V	300mA (Ta)	1.2Ohm @ 300mA, 4.5V	1V @ 250µA	0.9nC @ 4.5V	45pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-363

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