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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

FET, MOSFET Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
NXH008P120M3F1PG MOSFET 2N-CH 1200V 145A onsemi	18	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	145A (Tc)	10.9mOhm @ 120A, 18V	4.4V @ 60mA	419nC @ 18V	8334pF @ 800V	382W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
GCMX020A120B2H1P MOSFET 4N-CH 1200V 102A SemiQ	10	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	102A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	222nC @ 20V	5600pF @ 800V	333W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
FF11MR12W2M1HPB11BPSA1 MOSFET 1200V Infineon Technologies	18	RFQ	Datasheet	CoolSiC™	-	Tray	Active	-	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	-	-
GCMX010A120B3B1P MOSFET 2N-CH 1200V 173A SemiQ	9	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	173A (Tc)	14mOhm @ 100A, 20V	4V @ 40mA	483nC @ 20V	13800pF @ 800V	577W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
GCMX020A120B3H1P MOSFET 4N-CH 1200V 93A SemiQ	4	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	93A (Tc)	28mOhm @ 50A, 20V	4V @ 20mA	250nC @ 20V	6700pF @ 800V	300W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
FF17MR12W1M1HPB11BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	24	RFQ	Datasheet	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	AG-EASY1B
DF8MR12W1M1HFB67BPSA1 MOSFET 2N-CH 1200V 45A AG-EASY1B Infineon Technologies	22	RFQ	Datasheet	EasyPACK™	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel	-	1200V (1.2kV)	45A	16.2mOhm @ 50A, 18V	5.15V @ 20mA	149nC @ 18V	4400pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	AG-EASY1B
FF17MR12W1M1HB70BPSA1 MOSFET 1200V AG-EASY1B Infineon Technologies	13	RFQ	Datasheet	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	-	-	1200V (1.2kV)	-	-	-	-	-	-	-	-	-	Chassis Mount	AG-EASY1B
FF17MR12W1M1HB17BPSA1 MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies	24	RFQ	-	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	50A (Tj)	16.2mOhm @ 50A, 18V	5.15V @ 20mA	149nC @ 18V	4400pF @ 800V	20mW	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	AG-EASY1B
NXH011F120M3F2PTHG MOSFET 4N-CH 1200V 105A 34PIM onsemi	13	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tc)	16mOhm @ 100A, 18V	4.4V @ 60mA	284nC @ 18V	6211.6pF @ 800V	244W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	34-PIM (56.7x42.5)
FF8MR12W1M1HB70BPSA1 MOSFET Infineon Technologies	20	RFQ	Datasheet	-	-	Tray	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FF7MR12W1M1HB17BPSA1 MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies	24	RFQ	-	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	105A (Tj)	5.8mOhm @ 120A, 18V	5.15V @ 56mA	400nC @ 18V	12100pF @ 800V	20mW	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	AG-EASY1B
NXH007F120M3F2PTHG MOSFET 4N-CH 1200V 149A 34PIM onsemi	6	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	149A (Tc)	10mOhm @ 120A, 18V	4.4V @ 60mA	407nC @ 18V	9090pF @ 800V	353W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	34-PIM (56.7x42.5)
MSCSM170HRM451AG MOSFET 4N-CH 1700V/1200V 64A Microchip Technology	10	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1700V (1.7kV), 1200V (1.2kV)	64A (Tc), 89A (Tc)	45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V	3.2V @ 2.5mA, 2.8V @ 3mA	178nC @ 20V, 232nC @ 20V	3300pF @ 1000V, 3020pF @ 1000V	319W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH008T120M3F2PTHG MOSFET 4N-CH 1200V 129A 29PIM onsemi	18	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel	-	1200V (1.2kV)	129A (Tc)	11.5mOhm @ 100A, 18V	4.4V @ 60mA	454nC @ 20V	9129pF @ 800V	371W (Tj)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	29-PIM (56.7x42.5)
MSCSM120HRM311AG MOSFET 4N-CH 1200V/700V 89A Microchip Technology	10	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	1200V (1.2kV), 700V	89A (Tc), 124A (Tc)	31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V	2.8V @ 3mA, 2.4V @ 4mA	232nC @ 20V, 215nC @ 20V	3020pF @ 1000V, 4500pF @ 700V	395W (Tc), 365W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
FF6MR12W2M1HPB11BPSA1 MOSFET 2N-CH 1200V 200A MODULE Infineon Technologies	18	RFQ	Datasheet	HEXFET®	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel	-	1200V (1.2kV)	200A (Tj)	5.63mOhm @ 200A, 15V	5.55V @ 80mA	496nC @ 15V	14700pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
FF6MR12W2M1HB11BPSA1 MOSFET 2N-CH 1200V 145A MODULE Infineon Technologies	18	RFQ	Datasheet	CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	145A (Tj)	5.4mOhm @ 150A, 18V	5.15V @ 60mA	446nC @ 18V	13200pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module
GCMX005A120B3B1P MOSFET 4N-CH 1200V 383A SemiQ	2	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Half Bridge)	-	1200V (1.2kV)	383A (Tc)	7mOhm @ 200A, 20V	4V @ 80mA	927nC @ 20V	23500pF @ 800V	1.154kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
NXH004P120M3F2PNG MOSFET 2N-CH 1200V 338A 36PIM onsemi	20	RFQ	Datasheet	-	Module	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	338A (Tc)	5.5mOhm @ 200A, 18V	4.4V @ 120mA	876nC @ 20V	16410pF @ 800V	1.098W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	36-PIM (56.7x62.8)

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