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Infineon Technologies FF17MR12W1M1HB70BPSA1
- Part No.:
- FF17MR12W1M1HB70BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF17MR12W1M1HB70BPSA1.pdf
- Description:
- MOSFET 1200V AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:13
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Product details
Overview
FF17MR12W1M1HB70BPSA1 from Infineon is a 1200 V, 50 A dual-channel SiC MOSFET power module in EasyDUAL™ 2L package with integrated NTC thermistor and PressFIT terminals. It integrates two CoolSiC™ Trench MOSFETs in half-bridge configuration, delivers 16.2 mΩ RDS(on) at 25 °C, 9 nH stray inductance, and supports 150 °C junction operation for high-efficiency DC/DC converters and EV DC chargers.
For engineers reviewing the FF17MR12W1M1HB70BPSA1 datasheet, FF17MR12W1M1HB70BPSA1 pinout, FF17MR12W1M1HB70BPSA1 application, or FF17MR12W1M1HB70BPSA1 equivalent, this page provides verified electrical parameters, thermal resistance (0.479 K/W per MOSFET), gate drive requirements (−5/15 V), NTC characteristics (5 kΩ @ 25 °C, B25/100 = 3433 K), and mechanical mounting details for industrial UPS and high-frequency switching designs.
Technical Context
This module implements a dual-channel, isolated half-bridge topology using discrete CoolSiC™ Trench MOSFETs on an AlN substrate. Its low-inductive layout (9 nH) and 2.1 mΩ terminal-to-chip resistance enable fast switching (ton = 36 ns, toff = 54 ns @ 25 °C) with Eon/Eoff of 0.79/0.14 mJ per pulse at 50 A/600 V.
The integrated NTC thermistor (R25 = 5 kΩ ±5%, B25/100 = 3433 K) enables real-time die temperature monitoring, while PressFIT contact technology eliminates soldering and ensures repeatable thermal interface performance under 20–50 N clamp force per mounting point.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Withstands DC bus voltages up to 1200 V in industrial and EV charging applications. |
| IDN / IDRM | 50 A continuous / 100 A peak - Supports sustained 50 A RMS output with headroom for transient overload. |
| RDS(on) | 16.2 mΩ @ 25 °C - Enables low conduction loss in high-current DC/DC stages; rises to 30.1 mΩ at 150 °C. |
| LsCE | 9 nH - Minimizes voltage overshoot and ringing during hard-switching at >100 kHz frequencies. |
| RthJH | 0.479 K/W per MOSFET - Enables efficient heat transfer to heatsink with λgrease = 1 W/(m·K). |
| NTC R25 | 5 kΩ ±5% - Provides calibrated temperature sensing across −40 to 150 °C operating range. |
| VGS(on/off) | +15…+18 V / −5…0 V - Requires negative turn-off bias to suppress parasitic turn-on in high-dv/dt environments. |
Pinout & Package
FF17MR12W1M1HB70BPSA1 uses the EasyDUAL™ 2L package (120 mm × 62.5 mm × 17 mm), featuring PressFIT input/output terminals and integrated mounting clamps. The AlN ceramic substrate ensures low thermal resistance and high insulation (3.0 kV RMS, CTI > 200).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | High-side drain (DC+) / Low-side source (DC−) | Power input terminals; rated for 50 A RMS per pin; designed for direct busbar connection. |
| N1, N2 | Low-side drain / High-side source (phase output) | Switching node terminals; optimized for minimal loop inductance in half-bridge leg layout. |
| G1, G2 | High-side / Low-side gate inputs | Isolated gate connections; require separate gate drivers with −5 V to +18 V swing capability. |
| S1, S2 | High-side / Low-side source sense | Kelvin source pins for accurate gate drive referencing and current sensing compensation. |
| T1, T2 | NTC thermistor terminals | Two-wire analog interface for die temperature feedback; R = 5 kΩ @ 25 °C, B-value = 3433 K. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 16.2 mΩ RDS(on), reducing conduction loss by ~30% vs. comparable Si IGBTs. |
| PressFIT contact system | Eliminates solder reflow process; achieves consistent contact pressure (20–50 N/clamp) and thermal interface reliability over 1000 thermal cycles. |
| Integrated NTC thermistor | Monitors junction temperature directly via AlN substrate coupling; supports closed-loop thermal derating without external sensors. |
| Low-stray-inductance layout (9 nH) | Reduces switching voltage overshoot below 100 V at 50 A/1000 V, enabling reliable operation at ≥150 kHz switching frequency. |
| AlN ceramic substrate | Provides 0.479 K/W thermal resistance and 3.0 kV isolation, meeting IEC 60747/60068 industrial qualification standards. |
Applications
| EV DC Fast Charging | Industrial UPS Inverters |
|---|---|
|
Use Scenario: Bidirectional 15–30 kW DC/DC stage in liquid-cooled EV charging stations operating at 100–200 kHz. IC Role / Device Role / Timing Role: Dual-channel SiC MOSFET half-bridge switch handling primary-side ZVS soft-switching and secondary-side synchronous rectification. Use Value: 0.96 mJ turn-on energy at 150 °C enables >98.5% conversion efficiency while maintaining <150 °C junction temperature under full load. |
Use Scenario: Online double-conversion UPS systems delivering clean 3-phase 400 VAC output from 800 VDC bus with <5 ms switchover time. IC Role / Device Role / Timing Role: Half-bridge power stage in three-level NPC inverter topology, driving transformer-isolated output stage. Use Value: 9 nH stray inductance and 54 ns turn-off delay support precise dead-time control and reduce circulating losses in 16–20 kHz PWM operation. |
| High-Frequency DC/DC Converters | Renewable Energy Grid-Tie Inverters |
|
Use Scenario: Isolated 10 kW telecom rectifier with GaN-assisted LLC resonant primary and SiC synchronous rectification secondary. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch operating at 300–500 kHz with zero-voltage switching recovery. Use Value: Body diode forward voltage of 3.85 V @ 150 °C and 50 A enables low-loss freewheeling with minimal reverse recovery charge (Qrr ≈ 0 nC). |
Use Scenario: 25 kW string inverter for solar farms, converting 1000 VDC PV input to 400 VAC grid output with active power factor correction. IC Role / Device Role / Timing Role: Boost-stage switching device in interleaved PFC front-end, operating at 30–50 kHz with phase-shifted control. Use Value: 100 A repetitive peak current rating and 0.154 mJ turn-off energy at 150 °C allow robust handling of MPPT-induced current surges without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXFN120N120T2 | 1200 V, 120 A single-die SiC MOSFET in TO-247-4L; no integrated NTC or PressFIT; RDS(on) = 12.5 mΩ. | Requires external gate driver isolation and discrete temperature sensing; better suited for custom PCB-mount designs than busbar-integrated systems. | Select when board-level integration and thermal sensor co-location are not required, and higher peak current headroom is prioritized over module-level reliability. |
| Wolfspeed CMTZ2M12070D | 1200 V, 70 A dual-channel SiC module in 62 mm format; includes NTC but uses screw-mount terminals; RDS(on) = 10.5 mΩ; LsCE = 12 nH. | Higher current rating and lower RDS(on), but larger footprint and higher stray inductance limit usable switching frequency to ≤80 kHz. | Select for higher-power (≥20 kW) applications where thermal margin outweighs high-frequency efficiency, and mechanical mounting flexibility is needed. |
Compared with IXFN120N120T2 and CMTZ2M12070D, FF17MR12W1M1HB70BPSA1 offers optimal balance of low inductance (9 nH), integrated thermal sensing, and PressFIT reliability for compact, high-frequency (>100 kHz), medium-power (10–30 kW) industrial and automotive systems.
Availability
FF17MR12W1M1HB70BPSA1 is available at Aetrix Electronics and suitable for EV DC fast charging, industrial UPS inverters, and high-frequency DC/DC converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for FF17MR12W1M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to the CoolSiC™ EasyDUAL™ module product line, engineered for high-efficiency, high-reliability power conversion in electric mobility, renewable energy, and industrial automation systems.
FAQ
What gate drive voltage is required for reliable operation?
FF17MR12W1M1HB70BPSA1 requires +15 to +18 V for turn-on and −5 to 0 V for turn-off to ensure robust immunity against dv/dt-induced false triggering. The −5 V bias suppresses Miller-induced turn-on during high-speed switching, especially critical given its 0.014 nF Crss and 34.3 kV/µs dv/dt capability.
How is thermal monitoring implemented in this module?
Thermal monitoring is achieved via an integrated NTC thermistor (5 kΩ @ 25 °C, B25/100 = 3433 K) bonded directly to the AlN substrate beneath the MOSFET dies. Its terminals (T1/T2) provide a two-wire analog interface compatible with standard ADC-based temperature acquisition circuits.
Does this module support paralleling for higher current capacity?
No-FF17MR12W1M1HB70BPSA1 is not designed for parallel operation. Its internal layout, gate drive asymmetry, and lack of current-sharing features (e.g., emitter resistors or matched dynamic parameters) make paralleling unreliable. For higher current, Infineon recommends the 70 A CMTZ2M12070D or multi-module interleaved topologies.
What mechanical mounting method does this module use?
It uses integrated mounting clamps with PressFIT terminals-no soldering or screws required. Each clamp applies 20–50 N force to ensure low-contact-resistance interconnection between copper baseplate and heatsink, validated for >1000 thermal cycles per IEC 60068-2-14.
FF17MR12W1M1HB70BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B
FF17MR12W1M1HB70BPSA1 FAQ
1.How can I place an order for FF17MR12W1M1HB70BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF17MR12W1M1HB70BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF17MR12W1M1HB70BPSA1 reliable?
The price and inventory of FF17MR12W1M1HB70BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF17MR12W1M1HB70BPSA1 is usually 5 days.
3.What payment methods are accepted for FF17MR12W1M1HB70BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF17MR12W1M1HB70BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF17MR12W1M1HB70BPSA1?
FF17MR12W1M1HB70BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF17MR12W1M1HB70BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF17MR12W1M1HB70BPSA1?
For technical support, including FF17MR12W1M1HB70BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF17MR12W1M1HB70BPSA1 requirements.
6.How does Aetrix verify that FF17MR12W1M1HB70BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF17MR12W1M1HB70BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF17MR12W1M1HB70BPSA1 meets industry standards.
7.What is the process for return or replacement of FF17MR12W1M1HB70BPSA1?
All FF17MR12W1M1HB70BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF17MR12W1M1HB70BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF17MR12W1M1HB70BPSA1 part is unused and in its original packaging.
Return procedure for FF17MR12W1M1HB70BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF17MR12W1M1HB70BPSA1 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
Rohm Semiconductor
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UM6K34NTCN
Rohm Semiconductor
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DMG6601LVT-7
Diodes Incorporated
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