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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

FET, MOSFET Arrays

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
MSCSM120AM08CT3AG MOSFET 2N-CH 1200V 337A SP3F Microchip Technology	2	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	337A (Tc)	7.8mOhm @ 160A, 20V	2.8V @ 4mA	928nC @ 20V	12.08pF @ 1000V	1.409kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP3F
FF2MR12W3M1HB11BPSA1 MOSFET 4N-CH 1200V AG-EASY3B Infineon Technologies	17	RFQ	Datasheet	EasyPACK™, CoolSiC™	Module	Tray	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1200V (1.2kV)	400A (Tj)	2.27mOhm @ 400A, 18V	5.15V @ 224mA	1600nC @ 18V	48400pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	AG-EASY3B
MSCSM70DUM025AG MOSFET 2N-CH 700V 689A Microchip Technology	5	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	700V	689A (Tc)	3.2mOhm @ 240A, 20V	2.4V @ 24mA	1290nC @ 20V	27000pF @ 700V	1882W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
BSM180D12P2E002 MOSFET 2N-CH 1200V 204A MODULE Rohm Semiconductor	8	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	204A (Tc)	-	4V @ 35.2mA	-	18000pF @ 10V	1360W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
MSCSM120DUM042AG MOSFET 2N-CH 1200V 495A Microchip Technology	2	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Dual) Common Source	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1000V	2031W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM170TAM23CTPAG MOSFET 6N-CH 1700V 122A Microchip Technology	3	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	1700V (1.7kV)	122A (Tc)	22.5mOhm @ 60A, 20V	3.2V @ 5mA	356nC @ 20V	6600pF @ 1000V	588W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120AM042CT6LIAG MOSFET 2N-CH 1200V 495A SP6C LI Microchip Technology	4	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18100pF @ 1kV	2.031kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C LI
MSCSM120AM042CD3AG MOSFET 2N-CH 1200V 495A D3 Microchip Technology	3	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18.1pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	D3
MSCSM70TLM05CAG MOSFET 4N-CH 700V 464A SP6C Microchip Technology	7	RFQ	-	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Three Level Inverter)	-	700V	464A (Tc)	4.8mOhm @ 160A, 20V	2.4V @ 16mA	860nC @ 20V	18000pF @ 700V	1277W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C
MSCSM170HM12CAG MOSFET 4N-CH 1700V 179A Microchip Technology	13	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM170AM058CT6AG MOSFET 2N-CH 1700V 353A Microchip Technology	3	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM170TAM15CTPAG MOSFET 6N-CH 1700V 179A Microchip Technology	8	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	6 N-Channel (Phase Leg)	-	1700V (1.7kV)	179A (Tc)	15mOhm @ 90A, 20V	3.2V @ 7.5mA	534nC @ 20V	9900pF @ 1000V	843W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
MSCSM120TAM11CTPAG MOSFET 6N-CH 1200V 251A SP6-P Microchip Technology	2	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	251A (Tc)	10.4mOhm @ 120A, 20V	2.8V @ 3mA	696nC @ 20V	9060pF @ 1000V	1.042kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6-P
MSCSM120AM03CT6LIAG MOSFET 2N-CH 1200V 805A SP6C LI Microchip Technology	2	RFQ	Datasheet	-	Module	Tube	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1200V (1.2kV)	805A (Tc)	3.1mOhm @ 400A, 20V	2.8V @ 10mA	2320nC @ 20V	30200pF @ 1kV	3.215kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	SP6C LI
MSCSM170AM039CD3AG MOSFET 2N-CH 1700V 523A Microchip Technology	2	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N Channel (Phase Leg)	-	1700V (1.7kV)	523A (Tc)	5mOhm @ 270A, 20V	3.3V @ 22.5mA	1602nC @ 20V	29700pF @ 1000V	2.4kW (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	-
BSM600D12P3G001 MOSFET 2N-CH 1200V 600A MODULE Rohm Semiconductor	7	RFQ	Datasheet	-	Module	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	600A (Tc)	-	5.6V @ 182mA	-	31000pF @ 10V	2450W (Tc)	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module
FS03MR12A6MA1LBBPSA1 MOSFET 6N-CH 1200V AG-HYBRIDD Infineon Technologies	2	RFQ	Datasheet	HybridPACK™	Module	Tray	Active	Silicon Carbide (SiC)	6 N-Channel (3-Phase Bridge)	-	1200V (1.2kV)	400A	3.7mOhm @ 400A, 15V	5.55V @ 240mA	1320nC @ 15V	42500pF @ 600V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	AG-HYBRIDD-2
CAS480M12HM3 MOSFET 2N-CH 1200V 640A MODULE Wolfspeed, Inc.	1	RFQ	Datasheet	-	Module	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	640A (Tc)	2.97mOhm @ 480A, 15V	3.6V @ 160mA	1590nC @ 15V	43100pF @ 800V	-	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module
MCQ4503B-TP MOSFET N/P-CH 30V 5.6A 8SOP Micro Commercial Co	362	RFQ	Datasheet	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	N and P-Channel	-	30V	5.6A (Ta), 4.4A (Ta)	25mOhm @ 5.6A, 10V	1.5V @ 250µA, 1.4V @ 250µA	4.8nC @ 4.5V, 7.2nC @ 10V	535pF @ 15V, 680pF @ 15V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOP
DMN2028UFDH-7 MOSFET 2N-CH 20V 6.8A POWERDI Diodes Incorporated	118	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	6.8A	20mOhm @ 4A, 10V	1V @ 250µA	8.5nC @ 4.5V	151pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerDI3030-8

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