Infineon Technologies FS03MR12A6MA1LBBPSA1

Overview

FS03MR12A6MA1LBBPSA1 from Infineon is a 1200 V, 400 A nominal silicon carbide (SiC) hybrid power module in the HybridPACK™ Drive family, integrating dual CoolSiC™ MOSFETs with integrated body diodes and an NTC thermistor. It features 8.5 nH stray inductance, 0.108 K/W junction-to-fluid thermal resistance, and operates up to 150 °C junction temperature - designed for high-efficiency traction inverters in electric vehicles.

For engineers reviewing the FS03MR12A6MA1LBBPSA1 datasheet, FS03MR12A6MA1LBBPSA1 pinout, FS03MR12A6MA1LBBPSA1 application, or FS03MR12A6MA1LBBPSA1 equivalent, key selection criteria include its 1200 V blocking capability, low R_DS,on (3.7 mΩ typ. at 25 °C), press-fit contact technology, direct-cooled PinFin baseplate, and AQG 324 qualification for automotive powertrain use.

Technical Context

This module implements a half-bridge topology with two co-packaged 1200 V SiC MOSFETs sharing a common source terminal and integrated anti-parallel SiC body diodes. Each switch delivers 400 A RMS current at 105 °C terminal temperature and supports 800 A pulsed drain current under short-circuit conditions (t_SC = 3 µs).

The package integrates a 5 kΩ NTC thermistor (B_25/100 = 3433 K) for real-time junction temperature monitoring, and uses Si₃N₄ ceramic isolation rated for 4.2 kV DC (1 s), with creepage/clearance ≥9.0 mm / 4.5 mm. Cooling is optimized for 50% water/50% ethylene glycol at 10 dm³/min flow rate.

Key Specifications

Pinout & Package

FS03MR12A6MA1LBBPSA1 is housed in a compact, direct-cooled HybridPACK™ Drive module with PinFin baseplate and press-fit terminals. The package uses Ni-plated Cu baseplate, Si₃N₄ ceramic isolation, and RoHS-compliant UL 94 V0 frame.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC half-bridge power module applications.

Compared with FS03MR12A6MA1LBBPSA1, the FS03MR12A6MA1LB offers identical SiC performance but requires external thermal monitoring and mechanical assembly, while the FF600R12ME4 trades significant efficiency and thermal advantages for lower upfront cost and broader legacy gate driver compatibility.

Availability

FS03MR12A6MA1LBBPSA1 is available at Aetrix Electronics and suitable for EV traction inverters, hybrid power-split devices, and commercial agricultural vehicle motor drives requiring stable component supply, AQG 324-compliant automotive qualification, and direct-cooled SiC power density.

Supply support for FS03MR12A6MA1LBBPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensors for automotive, industrial, and renewable energy markets.

This part belongs to the HybridPACK™ Drive product line, engineered specifically for high-reliability, high-power-density traction inverters in electric and hybrid vehicles, with emphasis on SiC adoption, modular cooling, and functional safety readiness.

FAQ

What is the maximum allowable coolant flow rate and pressure for FS03MR12A6MA1LBBPSA1?

The module is rated for a maximum coolant flow rate of 10 dm³/min (10 L/min) with a pressure drop of 641 mbar at 60 °C fluid temperature. Maximum allowable pressure is 2.5 bar when baseplate temperature is below 40 °C, and 2.0 bar above 40 °C - values verified per AN-HPDPERF-ASSEMBLY for optimal thermal performance and mechanical integrity.

Does FS03MR12A6MA1LBBPSA1 support paralleling multiple modules in a single inverter phase?

Yes - the module's low stray inductance (8.5 nH), matched dynamic parameters (E_on/E_off variation <±5%), and symmetric pressFIT contact geometry enable reliable current sharing across paralleled units. Layout symmetry and gate drive matching are required to maintain <5% current imbalance at 800 A peak.

What gate driver voltage and resistance are recommended for optimal switching performance?

Infineon specifies V_GS = –5 V / +15 V with R_G,on = 5.1 Ω and R_G,off = 5.1 Ω for characterization. This yields t_d,on = 59 ns and t_d,off = 294 ns at 150 °C, balancing switching loss, dv/dt control, and EMI. Higher R_G values reduce EMI but increase losses; lower values risk oscillation due to low Cr_ss.

How is the NTC thermistor calibrated, and what tolerance applies across temperature?

The integrated NTC has R₂₅ = 5 kΩ ±5% at 25 °C and B_25/100 = 3433 K ±1%. Its resistance deviation is specified as ±5% at 100 °C (R₁₀₀ = 493 Ω), enabling junction temperature estimation within ±2 °C accuracy when used with a precision 10 µA bias current and 16-bit ADC readout.