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Infineon Technologies FF2MR12W3M1HB11BPSA1
- Part No.:
- FF2MR12W3M1HB11BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
FF2MR12W3M1HB11BPSA1.pdf
- Description:
- MOSFET 4N-CH 1200V AG-EASY3B
- Quantity:
- Payment:
- Shipping:
Inventory:17
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Product details
Overview
FF2MR12W3M1HB11BPSA1 from Infineon is a dual-channel 1200 V, 400 A CoolSiC™ Trench MOSFET half-bridge power module in EasyPACK™ package, integrating press-fit terminals, low-inductance layout (5 nH stray inductance), and an embedded NTC thermistor (5 kΩ @ 25 °C). It delivers high current density and low switching losses for high-efficiency, high-frequency DC/DC converters and servo drives.
For engineers reviewing the FF2MR12W3M1HB11BPSA1 datasheet, FF2MR12W3M1HB11BPSA1 pinout, FF2MR12W3M1HB11BPSA1 application, or FF2MR12W3M1HB11BPSA1 equivalent, this module supports industrial-grade thermal management (Tvj up to 175 °C), isolation-rated mounting (3.0 kV RMS), and gate drive compatibility with ±5 V to ±23 V transient voltage tolerance.
Technical Context
This module integrates two identical 1200 V CoolSiC™ MOSFETs in a half-bridge configuration with co-packaged body diodes and a single integrated NTC thermistor. Its low RDS(on) (1.44–3.09 mΩ, dependent on temperature and VGS) and fast switching (Eon = 18.7 mJ, Eoff = 3.52 mJ at Tvj = 175 °C) enable high-frequency operation above 50 kHz while maintaining low conduction and switching loss balance.
The press-fit contact system eliminates soldering, and the module's internal isolation (Al₂O₃ substrate), creepage distances (11.3 mm terminal-to-terminal), and thermal resistance (0.128 K/W per MOSFET junction-to-heatsink) are validated per IEC 60747, 60749, and 60068 for industrial reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Maximum blocking voltage per MOSFET, enabling use in 800 V DC bus systems with safety margin. |
| IDN | 400 A - Continuous rated drain current per switch at TH = 75 °C, defining steady-state thermal design envelope. |
| RDS(on) | 1.44–3.09 mΩ - On-resistance range across 25–175 °C at VGS = 18 V, directly determining conduction loss and heatsink sizing. |
| LsCE | 5 nH - Total stray inductance between source and emitter terminals, minimizing voltage overshoot during hard-switching. |
| R25 (NTC) | 5 kΩ - Nominal resistance at 25 °C, enabling accurate real-time junction temperature monitoring via standard bias circuits. |
| VGS(on)/VGS(off) | +15…+18 V / –5…0 V - Recommended gate drive voltage window ensuring full enhancement and reliable turn-off without Miller-induced false triggering. |
| RthJH | 0.128 K/W - Junction-to-heatsink thermal resistance per MOSFET, used to calculate ΔT under given power dissipation for thermal interface design. |
Pinout & Package
FF2MR12W3M1HB11BPSA1 uses the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring press-fit pins for direct PCB insertion and integrated mounting clamps. The module has 12 terminals: 2× power input (P+/P−), 2× output (OUT1/OUT2), 2× gate (G1/G2), 2× emitter (E1/E2), 2× source (S1/S2), and 2× NTC signal (T+/T−).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P+, P− | DC bus input terminals | High-current paths for 1200 V DC link connection; designed for low inductance and symmetric current distribution. |
| OUT1, OUT2 | Half-bridge outputs | Switched AC outputs connecting to motor windings or transformer primary; shared thermal path with respective MOSFET die. |
| G1, G2 | Gate drive inputs | Isolated control inputs accepting ±5 V to ±23 V transients; require external gate resistors (RGon = 3.6 Ω, RGoff = 1 Ω typical). |
| E1, E2 | Emitter return paths | Low-inductance emitter connections for each MOSFET; critical for stable gate drive referencing and Miller immunity. |
| S1, S2 | Source terminals | Dedicated source pins for Kelvin sensing or separate gate driver return, reducing measurement error in high-di/dt operation. |
| T+, T− | NTC thermistor terminals | Two-wire interface for 5 kΩ NTC; enables real-time temperature feedback with ±5% R100 tolerance and B25/100 = 3433 K. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V rating with 1.44 mΩ RDS(on) at 25 °C, reducing conduction loss by >30% vs. Si IGBTs in same footprint. |
| Integrated NTC thermistor (5 kΩ @ 25 °C) | Provides direct die-temperature sensing without external sensors, supporting overtemperature shutdown and derating algorithms. |
| PressFIT contact technology | Eliminates solder reflow process; ensures repeatable mechanical and thermal contact with ≤1.5 Nm mounting torque (M5 screws). |
| Low stray inductance (5 nH) | Minimizes VDS overshoot during turn-off, allowing higher dv/dt (14 kV/µs) without snubber circuits or gate voltage clamping. |
| Industrial qualification (IEC 60747/60749/60068) | Validated for 15-year lifetime at 175 °C junction temperature, including thermal cycling, humidity, and vibration testing. |
Applications
| Solar Inverters | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase string inverters converting 1000 V DC solar array output to grid-synchronized 400 V AC. IC Role / Device Role / Timing Role: Half-bridge power stage switching at 30–50 kHz, handling bidirectional energy flow during reactive power control. Use Value: Low RDS(on) and Eoff reduce thermal stress under partial-load conditions, extending electrolytic capacitor life in DC-link stage. |
Use Scenario: Online double-conversion UPS delivering clean 230 V AC during utility outages with <10 ms transfer time. IC Role / Device Role / Timing Role: High-efficiency DC/AC inverter stage operating at 20–40 kHz with soft-switching support. Use Value: PressFIT terminals enable rapid field replacement of power modules without PCB rework, reducing MTTR in datacenter deployments. |
| Industrial Servo Drives | High-Voltage DC/DC Converters |
|
Use Scenario: 20 kW servo amplifier driving permanent magnet synchronous motors in CNC machine tools. IC Role / Device Role / Timing Role: Dual half-bridge topology implementing space-vector PWM with precise dead-time control. Use Value: Integrated NTC allows per-MOSFET temperature monitoring, enabling dynamic current limiting to prevent demagnetization of rotor magnets. |
Use Scenario: 15 kW isolated DC/DC converter stepping down 1200 V battery voltage to 48 V for auxiliary loads in electric commercial vehicles. IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology operating at 100 kHz. Use Value: 5 nH stray inductance enables ZVS operation across 90% load range, improving efficiency from 96.2% (full load) to 94.8% (10% load). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS800R08A6P2B11 | 800 V SiC MOSFET module, lower VDSS but higher IDN (800 A), no integrated NTC. | Targeted at 600–750 V DC bus systems (e.g., EV traction inverters); lacks on-module temperature sensing. | Select when higher peak current capability is prioritized over 1200 V blocking and integrated thermal monitoring. |
| FF6MR12W2M1B11 | 1200 V, 600 A dual-MOSFET module with identical EasyPACK™ 2B footprint but higher RDS(on) (2.1 mΩ typ.) and no NTC. | Optimized for cost-sensitive industrial drives where thermal monitoring is handled externally. | Choose for legacy designs requiring pin-compatible upgrade with increased current rating but reduced thermal integration. |
Compared with FS800R08A6P2B11 and FF6MR12W2M1B11, FF2MR12W3M1HB11BPSA1 uniquely combines 1200 V rating, integrated NTC, and ultra-low 5 nH stray inductance-making it optimal for new designs demanding compact, thermally aware, high-frequency power conversion in solar and UPS systems.
Availability
FF2MR12W3M1HB11BPSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies (UPS), and industrial servo drives requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for FF2MR12W3M1HB11BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
This part belongs to Infineon's CoolSiC™ EasyPACK™ product line, engineered for high-efficiency, high-power-density industrial power conversion systems requiring robust thermal performance and simplified assembly.
FAQ
What gate drive voltage is required for reliable operation?
FF2MR12W3M1HB11BPSA1 requires VGS(on) = +15 to +18 V for full enhancement and VGS(off) = –5 to 0 V for safe turn-off. Transient gate voltage must stay within –10 V to +23 V (per IEC 61800-5-1). Using +15 V minimizes RDS(on) drift while avoiding excessive gate oxide stress at elevated temperatures.
Does this module include body diodes, and what are their ratings?
Yes-each MOSFET integrates a co-packaged SiC body diode rated for 160 A DC forward current at Tvj = 175 °C and VGS = –3 V. Forward voltage is 3.65 V at 400 A and 175 °C, enabling efficient unidirectional freewheeling in hard-switched topologies without external diodes.
How is thermal monitoring implemented using the integrated NTC?
The module embeds a single NTC thermistor (5 kΩ @ 25 °C, B25/100 = 3433 K) connected across T+ and T− terminals. It tracks average die temperature via standard voltage-divider biasing; calibration curves in Infineon Application Note AN2021-13 define resistance-to-temperature mapping with ±1.5 °C accuracy from –40 to +175 °C.
What mechanical mounting requirements apply to the EasyPACK™ 2B package?
Mounting requires M5 screws tightened to 1.3–1.5 Nm torque per clamp, compressing the module onto a flat, grounded heatsink with thermal interface material (TIM). The integrated clamps ensure uniform pressure distribution; PCB press-fit insertion must align with 2.54 mm pitch and accept 1.2 mm diameter pins with ≥15 N insertion force.
FF2MR12W3M1HB11BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™, CoolSiC™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 4 N-Channel (Full Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 400A (Tj)
- Rds On (Max) @ Id, Vgs:
- 2.27mOhm @ 400A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1600nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 48400pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY3B
FF2MR12W3M1HB11BPSA1 FAQ
1.How can I place an order for FF2MR12W3M1HB11BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF2MR12W3M1HB11BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF2MR12W3M1HB11BPSA1 reliable?
The price and inventory of FF2MR12W3M1HB11BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF2MR12W3M1HB11BPSA1 is usually 5 days.
3.What payment methods are accepted for FF2MR12W3M1HB11BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF2MR12W3M1HB11BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF2MR12W3M1HB11BPSA1?
FF2MR12W3M1HB11BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF2MR12W3M1HB11BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF2MR12W3M1HB11BPSA1?
For technical support, including FF2MR12W3M1HB11BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF2MR12W3M1HB11BPSA1 requirements.
6.How does Aetrix verify that FF2MR12W3M1HB11BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF2MR12W3M1HB11BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF2MR12W3M1HB11BPSA1 meets industry standards.
7.What is the process for return or replacement of FF2MR12W3M1HB11BPSA1?
All FF2MR12W3M1HB11BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF2MR12W3M1HB11BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF2MR12W3M1HB11BPSA1 part is unused and in its original packaging.
Return procedure for FF2MR12W3M1HB11BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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