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Diodes Incorporated DMN2028UFDH-7
- Part No.:
- DMN2028UFDH-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN2028UFDH-7.pdf
- Description:
- MOSFET 2N-CH 20V 6.8A POWERDI
- Quantity:
- Payment:
- Shipping:
Inventory:118
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Product details
Overview
DMN2028UFDH-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in POWERDI3030-8 package, rated for 20V V(BR)DSS, 20mΩ RDS(ON) @ 10V VGS, and 6.8A continuous drain current at +25°C. It integrates ESD protection up to 2kV and meets AEC-Q101 for automotive reliability. It serves as a high-efficiency load switch in power management circuits.
For engineers reviewing the DMN2028UFDH-7 datasheet, DMN2028UFDH-7 pinout, DMN2028UFDH-7 application, or DMN2028UFDH-7 equivalent, key selection criteria include RDS(ON) vs. VGS curve down to 1.8V, thermal resistance (RθJA = 82°C/W with thermal bias), dual-channel layout for space-constrained DC-DC output stages, and AEC-Q101 qualification for under-hood use.
Technical Context
This dual MOSFET uses planar silicon process optimized for low on-resistance while maintaining fast switching via low gate charge (Qg = 8.5nC @ 4.5V) and low input capacitance (Ciss = 151pF). Each channel features integrated gate protection diodes and shares a common drain configuration per internal schematic.
It operates with gate threshold voltage VGS(th) between 0.5V and 1.0V, enabling logic-level drive compatibility, and supports pulsed drain current up to 40A. The device's RDS(ON) increases predictably with junction temperature-e.g., +36% at 125°C vs. 25°C at VGS = 4.5V-enabling accurate thermal derating in compact PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 20V - Maximum blocking voltage before avalanche conduction; defines safe operating range in 12V automotive and 5–19V industrial rails. |
| RDS(ON) max | 20mΩ @ VGS = 10V - On-resistance measured at 4A; determines I²R conduction loss in high-current load switching. |
| ID max (TA = 25°C) | 6.8A - Continuous DC current rating with FR-4 board and thermal bias; sets maximum steady-state load capacity. |
| Qg | 8.5nC @ VGS = 4.5V - Total gate charge required for full turn-on; directly impacts switching loss and driver sizing. |
| RθJA | 82°C/W - Junction-to-ambient thermal resistance with 2oz copper and thermal pad; enables thermal budget calculation for 1.5W PD limit. |
| ESD Rating | ±2kV HBM - Human-body-model ESD robustness; eliminates need for external TVS in many board-level ESD environments. |
| AEC-Q101 | Qualified - Automotive-grade reliability certification covering temperature cycling, HTRB, and UHAST; required for engine control and body electronics. |
Pinout & Package
Package: POWERDI3030-8, surface-mount, 8-terminal molded plastic case with UL 94V-0 flammability rating and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Low-side return path for Channel 1; electrically isolated from S2 but thermally coupled on shared die substrate. |
| G1 | Gate 1 | Control terminal for Channel 1; requires ≤ ±9.6V per AEC-Q101; protected by integrated Zener diode. |
| D | Drain (Common) | Shared drain connection for both channels; must be routed with adequate copper area for 40A pulse handling. |
| G2 | Gate 2 | Independent control terminal for Channel 2; identical electrical specs to G1; no cross-talk due to physical separation. |
| S2 | Source 2 | Low-side return path for Channel 2; enables dual independent load switching with single drain node. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 22mΩ - Enables efficient 3.3V/5V GPIO-driven switching without level-shifting circuitry. |
| Dual-channel integration | Two matched N-MOSFETs in one 3.0×3.0mm footprint - Reduces PCB area by ~40% vs. discrete dual-SO8 solution. |
| Thermal performance | RθJC = 14°C/W - Enables direct heat transfer to inner-layer copper planes, critical for sustained 5A operation in sealed enclosures. |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress - Supports deployment in ADAS power domains without requalification. |
| Green packaging | Halogen- and antimony-free, RoHS-compliant molding compound - Meets EU ELV Directive and OEM sustainability requirements. |
Applications
| Automotive Body Control Module | Industrial PLC Output Stage |
|---|---|
|
Use Scenario: Driving multiple solenoids and LED clusters from a single microcontroller output with independent enable control. IC Role / Device Role / Timing Role: Dual low-side switch providing isolated current paths for two 12V loads with fast turn-off (<234ns fall time) to prevent back-EMF coupling. Use Value: Eliminates need for discrete driver ICs and external flyback diodes; RDS(ON) stability over −40°C to +125°C ensures consistent brightness and actuation timing. |
Use Scenario: Solid-state replacement for electromechanical relays controlling 24V DC actuators in factory automation cabinets. IC Role / Device Role / Timing Role: High-reliability load switch delivering 6.5A continuous current per channel with <561ns turn-off delay for precise sequence control. Use Value: 100% duty-cycle capability at 5A with thermal bias reduces system size and eliminates relay wear-out failure mode. |
| USB-C Power Delivery Sink | Server VRM Output Stage |
|
Use Scenario: Controlling VBUS path and CC line power switches in portable USB-C accessories requiring reverse polarity protection. IC Role / Device Role / Timing Role: Dual N-channel switch implementing bidirectional load switching with integrated ESD protection on all pins. Use Value: 2kV HBM ESD rating protects CC and VBUS lines without external components; 1.8V RDS(ON) support enables low-power standby modes. |
Use Scenario: Secondary-side synchronous rectification in multiphase 48V-to-12V server buck converters. IC Role / Device Role / Timing Role: Dual parallel-connected MOSFETs per phase sharing current with matched RDS(ON) and gate drive timing. Use Value: 16mΩ typical RDS(ON) at 10V reduces conduction loss by 32% vs. comparable 30V single-channel devices, improving 80 PLUS Titanium efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2028UFDF-7 | Same die, but in smaller POWERDI3333-8 (3.3×3.3mm) package with higher RθJA (118°C/W, no thermal bias). | Limited to lower ambient temperatures or pulsed operation; unsuitable for sustained >4A loads in enclosed spaces. | Select when board space is constrained and thermal margin exceeds 25°C above ambient. |
| DMN2028LFDH-7 | Same POWERDI3030-8 package but with 30V V(BR)DSS and 28mΩ RDS(ON) @ 4.5V; higher gate threshold (0.7–1.3V). | Better for 24V systems but sacrifices efficiency in 12V/5V rails due to higher on-resistance and slower turn-on at low VGS. | Select only if system requires 24V fault tolerance and can accept 18% higher conduction loss at 4.5V drive. |
Compared with DMN2028UFDH-7, DMN2028UFDF-7 trades thermal performance for footprint reduction, while DMN2028LFDH-7 prioritizes voltage headroom over low-VGS efficiency-making the -UFDH variant optimal for 12V automotive and high-density 5V industrial power rails.
Availability
DMN2028UFDH-7 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC output stages, and USB-C power delivery sink designs requiring stable component supply, AEC-Q101 compliance, and high thermal reliability.
Supply support for DMN2028UFDH-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan and China.
This part belongs to Diodes' POWERDI® family of high-density, thermally enhanced MOSFETs designed specifically for space- and efficiency-critical power management in automotive and industrial applications.
FAQ
What is the maximum allowable gate-source voltage for DMN2028UFDH-7 in automotive applications?
The absolute maximum gate-source voltage is ±12V per datasheet, but AEC-Q101 qualification restricts continuous operation to ±9.6V. Exceeding this risks long-term gate oxide degradation under temperature cycling. Drive circuits must clamp VGS within ±9.6V during transients, especially in 12V battery systems with load-dump spikes.
Can DMN2028UFDH-7 be used in parallel configurations for higher current handling?
Yes-the matched RDS(ON) characteristics (±15% unit-to-unit variation) and symmetrical thermal layout support paralleling. However, individual gate resistors (≥10Ω) and separate source routing are mandatory to ensure current sharing; shared source traces induce negative feedback imbalance above 3A per device.
Does the internal schematic show body diode conduction capability for reverse current flow?
Yes-each channel includes an intrinsic body diode with forward voltage VSD = 0.7–1.0V at 5A. This enables freewheeling in inductive loads, but the diode is not rated for continuous reverse conduction beyond IS = 2A. For bidirectional current, external Schottky clamping is recommended.
How does moisture sensitivity level 1 impact PCB assembly for DMN2028UFDH-7?
MSL-1 means the device may be stored indefinitely at ≤30°C/60% RH without dry-pack requirements and withstands standard reflow profiles (peak 260°C) without baking. No floor-life tracking or preconditioning is needed, simplifying SMT line logistics for high-mix manufacturing.
DMN2028UFDH-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Common Drain
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 151pF @ 10V
- Power - Max:
- 1.1W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3030-8
DMN2028UFDH-7 FAQ
1.How can I place an order for DMN2028UFDH-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN2028UFDH-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN2028UFDH-7 reliable?
The price and inventory of DMN2028UFDH-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN2028UFDH-7 is usually 5 days.
3.What payment methods are accepted for DMN2028UFDH-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN2028UFDH-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN2028UFDH-7?
DMN2028UFDH-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN2028UFDH-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN2028UFDH-7?
For technical support, including DMN2028UFDH-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN2028UFDH-7 requirements.
6.How does Aetrix verify that DMN2028UFDH-7 is sourced from the original manufacturer or authorized distributors?
All DMN2028UFDH-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN2028UFDH-7 meets industry standards.
7.What is the process for return or replacement of DMN2028UFDH-7?
All DMN2028UFDH-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN2028UFDH-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN2028UFDH-7 part is unused and in its original packaging.
Return procedure for DMN2028UFDH-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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