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Infineon Technologies FF8MR12W1M1HB70BPSA1
- Part No.:
- FF8MR12W1M1HB70BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- -
- Datasheet:
-
FF8MR12W1M1HB70BPSA1.pdf
- Description:
- MOSFET
- Quantity:
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Product details
Overview
FF8MR12W1M1HB70BPSA1 from Infineon is a 1200 V, 100 A dual-channel CoolSiC™ Trench MOSFET EasyDUAL power module with integrated NTC thermistor and PressFIT terminals. It delivers low switching losses (Eon = 3.12 mJ, Eoff = 0.82 mJ at 150 °C), 9 nH stray inductance, and 0.311 K/W junction-to-heat-sink thermal resistance. Used in high-frequency DC/DC converters for EV fast-charging systems.
For engineers reviewing the FF8MR12W1M1HB70BPSA1 datasheet, FF8MR12W1M1HB70BPSA1 pinout, FF8MR12W1M1HB70BPSA1 application, or FF8MR12W1M1HB70BPSA1 equivalent, key selection criteria include its 1200 V blocking capability, PressFIT mechanical interface, integrated NTC for real-time die temperature monitoring, and low-inductive dual-switch topology optimized for 10–100 kHz hard-switched industrial and automotive traction applications.
Technical Context
This module integrates two identical 1200 V CoolSiC™ Trench MOSFETs in a half-bridge configuration with co-packaged body diodes and an embedded NTC thermistor. Its AlN substrate enables 0.311 K/W thermal resistance per switch, while the low-stray-inductance layout (9 nH) supports clean voltage transitions up to 24 kV/µs dv/dt during turn-off.
The gate drive requires asymmetric voltages: -5 V to 0 V for reliable turn-off and +15 V to +18 V for low RDS(on) conduction. The NTC provides calibrated resistance (5 kΩ @ 25 °C, B25/100 = 3433 K) for closed-loop thermal management, and the PressFIT contact system eliminates soldering while maintaining 20–50 N clamp force per mounting point.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables operation in 800 V DC bus systems with 50 % voltage margin for transient overvoltage. |
| IDDC (Tvj = 175 °C) | 100 A - Continuous current rating per switch under forced-air-cooled heatsink conditions. |
| RDS(on) (Tvj = 25 °C) | 8.1 mΩ - Low conduction loss enabling <1.2 W static loss per switch at 100 A. |
| Eon / Eoff (Tvj = 150 °C) | 3.12 mJ / 0.82 mJ - Total energy loss per switching cycle at rated current, defining efficiency ceiling in 20–50 kHz converters. |
| LsCE | 9 nH - Minimizes voltage overshoot and ringing during hard switching, reducing snubber requirements. |
| R25 (NTC) | 5 kΩ ±5 % - Enables accurate die temperature sensing within ±2 °C accuracy across -40 to 150 °C range. |
| RthJH | 0.311 K/W - Allows direct thermal modeling of junction temperature rise under known heat sink thermal resistance. |
Pinout & Package
FF8MR12W1M1HB70BPSA1 uses the EasyDUAL 2B package: 17 mm × 110 mm footprint, AlN ceramic substrate, PressFIT-compatible copper terminals, and integrated mounting clamps. Weight: 24 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Dual parallel inputs for redundancy and current sharing; rated for 200 A peak repetitive current. |
| N1, N2 | Negative DC bus return | Dual parallel returns; low-inductance path to minimize common-source inductance in half-bridge operation. |
| U, V | Phase output (half-bridge legs) | Direct connection to motor windings or transformer primary; designed for <9 nH loop inductance with adjacent heatsink mounting. |
| G1, G2 | High-side gate drivers | Isolated gate terminals with internal 2.1 Ω gate resistor; require negative bias (-5 V) for robust Miller immunity. |
| S1, S2 | Low-side source / emitter | Source reference pins for gate driver feedback; electrically tied to N1/N2 but kept separate for Kelvin sensing. |
| T1, T2 | NTC thermistor terminals | Two-wire NTC interface (5 kΩ @ 25 °C); enables real-time die temperature measurement without additional PCB routing. |
Key Features
| Feature | Design Value |
|---|---|
| CoolSiC™ Trench MOSFET technology | Enables 1200 V blocking with 8.1 mΩ RDS(on) at 25 °C-reducing conduction loss by ~40 % vs. comparable Si IGBTs. |
| PressFIT contact system | Eliminates solder reflow process; achieves >20 N clamp force per terminal with <0.1 mΩ contact resistance over lifetime. |
| Integrated NTC thermistor | Calibrated 5 kΩ ±5 % resistance at 25 °C with B25/100 = 3433 K-supports ±1.5 °C die temperature estimation in closed-loop thermal control. |
| AlN ceramic substrate | Provides 0.311 K/W thermal resistance per switch-enabling 150 °C max junction operation with standard industrial heatsinks. |
| Low-stray-inductance layout | 9 nH total stray inductance (LsCE)-limits voltage overshoot to <150 V at 10 kA/µs di/dt, reducing snubber size and cost. |
Applications
| EV DC Fast Charger | Industrial UPS Inverter |
|---|---|
Use Scenario: 30–150 kW bi-directional AC/DC and DC/DC stages converting grid AC to 400–1000 V battery DC. IC Role / Device Role / Timing Role: Dual-channel half-bridge switch handling 100 A RMS at 20–50 kHz with synchronous rectification support via body diode. Use Value: 3.12 mJ turn-on and 0.82 mJ turn-off energy at 150 °C enables >98.5 % converter efficiency at full load while maintaining <150 °C junction temperature. | Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 750 VDC bus during mains failure. IC Role / Device Role / Timing Role: High-efficiency inverter stage operating in hard-switched PWM mode with 1200 V blocking headroom for 800 V DC link transients. Use Value: 9 nH stray inductance and 0.311 K/W thermal resistance allow stable 100 A operation at 50 °C ambient without derating, extending system MTBF. |
| Renewable Energy DC/DC Converter | High-Frequency Induction Heating |
Use Scenario: Solar farm string-level DC/DC boost converters stepping up 1000 V PV input to 1500 V HVDC bus. IC Role / Device Role / Timing Role: Primary-side SiC MOSFET switch in phase-shifted full-bridge topology operating at 40–100 kHz. Use Value: Low COSS (0.42 nF) and Crss (0.028 nF) reduce capacitive switching losses and improve ZVS behavior above 40 kHz. | Use Scenario: Solid-state RF generator for metal heating at 20–100 kHz with precise power regulation. IC Role / Device Role / Timing Role: Half-bridge power stage driving resonant LC tank with fast dv/dt (24 kV/µs) and di/dt (3.88 kA/µs) capability. Use Value: 820 A short-circuit withstand (tP = 2 µs, Tvj = 150 °C) ensures robustness against load mismatch and arc events without desat protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC half-bridge module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FS8MR12W1M1B70BPSA1 | Same die, but uses solder-based EasyDUAL 2B package instead of PressFIT; no integrated NTC. | Requires external temperature sensing; suitable where board-level reflow is preferred over press-fit assembly. | Select when legacy PCB assembly lines lack PressFIT insertion tooling or thermal cycling reliability demands solder joint integrity. |
| IXYS IXFN120N120T2 | Discrete 1200 V/120 A SiC MOSFET in TO-247-4L; no integrated NTC or dual-switch topology. | Needs discrete gate drivers, external current/voltage sensing, and custom thermal interface design. | Select when modular integration is not required and design flexibility for asymmetrical topologies (e.g., three-level NPC) is prioritized. |
Compared with FS8MR12W1M1B70BPSA1, FF8MR12W1M1HB70BPSA1 adds NTC-based thermal monitoring and eliminates soldering risk; versus IXFN120N120T2, it reduces bill-of-materials count by integrating dual switches, NTC, and low-inductance layout-but trades off configurability for out-of-the-box system readiness.
Availability
FF8MR12W1M1HB70BPSA1 is available at Aetrix Electronics and suitable for EV DC fast chargers, industrial UPS inverters, and renewable energy DC/DC converters requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for FF8MR12W1M1HB70BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.
This part belongs to Infineon's CoolSiC™ EasyDUAL product line, engineered for high-efficiency, high-power-density industrial and automotive traction inverters requiring robust 1200 V SiC switching performance in compact, assembly-ready modules.
FAQ
What gate drive voltage is recommended for FF8MR12W1M1HB70BPSA1?
Infineon specifies +15 V to +18 V for turn-on and -5 V to 0 V for turn-off. Using +18 V minimizes RDS(on) and conduction loss, while -5 V ensures robust immunity against Miller-induced false turn-on during high dv/dt switching. Gate resistors must be selected to limit peak gate current to <±5 A and achieve target switching speed without oscillation.
Does FF8MR12W1M1HB70BPSA1 include body diodes, and what is their forward voltage?
Yes, each MOSFET includes an integrated unipolar body diode rated for 55 A DC forward current at 175 °C. At 100 A and 25 °C, the typical forward voltage is 4.2–5.35 V; it decreases to 3.85 V at 150 °C. These diodes support synchronous rectification in DC/DC topologies but are not optimized for high-frequency freewheeling like dedicated SiC Schottky diodes.
How is thermal resistance measured for this module, and what does RthJH = 0.311 K/W mean in practice?
RthJH is measured per MOSFET from junction to heat sink interface under standardized test conditions (λgrease = 1 W/(m·K)). A value of 0.311 K/W means that at 100 A conduction loss (~1.2 W) plus 4 mJ switching loss at 20 kHz (~80 W), the junction-to-heatsink temperature rise is ~25.5 °C-enabling safe operation below 150 °C junction limit with a 70 °C heatsink.
Can the integrated NTC be used for real-time overtemperature protection?
Yes-the NTC (5 kΩ @ 25 °C, B25/100 = 3433 K) provides continuous die temperature feedback. When paired with a precision ADC and lookup table or Steinhart-Hart equation, it achieves ±1.5 °C accuracy from -40 to 150 °C. This enables active thermal derating and shutdown before reaching 150 °C absolute maximum, satisfying IEC 60747-16 functional safety requirements for industrial systems.
FF8MR12W1M1HB70BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
FF8MR12W1M1HB70BPSA1 FAQ
1.How can I place an order for FF8MR12W1M1HB70BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for FF8MR12W1M1HB70BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FF8MR12W1M1HB70BPSA1 reliable?
The price and inventory of FF8MR12W1M1HB70BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FF8MR12W1M1HB70BPSA1 is usually 5 days.
3.What payment methods are accepted for FF8MR12W1M1HB70BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FF8MR12W1M1HB70BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FF8MR12W1M1HB70BPSA1?
FF8MR12W1M1HB70BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FF8MR12W1M1HB70BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FF8MR12W1M1HB70BPSA1?
For technical support, including FF8MR12W1M1HB70BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FF8MR12W1M1HB70BPSA1 requirements.
6.How does Aetrix verify that FF8MR12W1M1HB70BPSA1 is sourced from the original manufacturer or authorized distributors?
All FF8MR12W1M1HB70BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FF8MR12W1M1HB70BPSA1 meets industry standards.
7.What is the process for return or replacement of FF8MR12W1M1HB70BPSA1?
All FF8MR12W1M1HB70BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with FF8MR12W1M1HB70BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FF8MR12W1M1HB70BPSA1 part is unused and in its original packaging.
Return procedure for FF8MR12W1M1HB70BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FF8MR12W1M1HB70BPSA1 Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
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