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Infineon Technologies DF8MR12W1M1HFB67BPSA1
- Part No.:
- DF8MR12W1M1HFB67BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- Module
- Datasheet:
-
DF8MR12W1M1HFB67BPSA1.pdf
- Description:
- MOSFET 2N-CH 1200V 45A AG-EASY1B
- Quantity:
- Payment:
- Shipping:
Inventory:22
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Product details
Overview
DF8MR12W1M1HFB67BPSA1 from Infineon is a 1200 V, 50 A EasyPACK™ power module integrating a CoolSiC™ Trench MOSFET, boost diode, bypass diode, inverse-polarity protection diode, body diode, and integrated NTC thermistor. It uses PressFIT contact technology and rugged mounting clamps for industrial-grade reliability in high-voltage solar inverters.
For engineers reviewing the DF8MR12W1M1HFB67BPSA1 datasheet, DF8MR12W1M1HFB67BPSA1 pinout, DF8MR12W1M1HFB67BPSA1 application, or DF8MR12W1M1HFB67BPSA1 equivalent, this module's low stray inductance (10 nH), dual 1.1 K/W thermal resistance per switch/diode, and -40 °C to 175 °C operating junction temperature are critical for high-efficiency, high-reliability PV string inverter designs.
Technical Context
This module implements a full-bridge-capable six-device topology: one SiC MOSFET with 16.2 mΩ RDS(on) at 25 °C, one fast-recovery boost diode (VF = 1.40–1.85 V), one bypass diode, one inverse-polarity protection diode, and an integrated NTC (R25 = 5 kΩ, B25/100 = 3433 K). All diodes share 1200 V VRRM rating and operate up to 150 °C junction temperature.
The module features low-inductive design (LsCE = 10 nH), symmetric terminal layout for balanced current sharing, and PressFIT solderless interconnection. Its gate drive requirements include VGS(on) = 15–18 V and VGS(off) = –5 to 0 V, with total gate charge QG = 0.149 µC and internal gate resistor RGint = 4.1 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 1000 V DC string solar inverters with 20 % safety margin. |
| IDN | 50 A - Continuous rated current per MOSFET switch under standard thermal conditions. |
| RDS(on) | 16.2 mΩ @ 25 °C - Low conduction loss enabling >99 % efficiency in high-frequency switching stages. |
| LsCE | 10 nH - Minimizes voltage overshoot and EMI during hard-switching at >50 kHz. |
| RthJH (MOSFET) | 1.1 K/W - Enables direct heatsink mounting without thermal interface material degradation concerns. |
| R25 (NTC) | 5 kΩ ±1 % - Provides accurate temperature feedback for real-time thermal derating of inverter output stage. |
| VF (Boost Diode) | 1.40–1.85 V @ 40 A - Low forward drop reduces conduction losses in MPPT boost converters. |
Pinout & Package
DF8MR12W1M1HFB67BPSA1 is housed in Infineon's EasyPACK™ 2B package (102 mm × 62 mm × 17 mm), featuring PressFIT copper terminals and integrated mounting clamps for mechanical robustness and thermal stability. The module uses a symmetrical 12-terminal layout optimized for low-inductance, high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2 | MOSFET source / Boost diode cathode | Common emitter node for half-bridge leg; supports bidirectional current flow in synchronous rectification mode. |
| B1, B2 | MOSFET drain / Boost diode anode | High-side switching node; connects to PV string input and boost inductor. |
| C1, C2 | Bypass diode anode | Provides redundant path during fault conditions; rated for 50 A RMS at 80 °C heatsink. |
| D1, D2 | Inverse-polarity protection diode cathode | Prevents damage from reversed PV string connection; shares same 1200 V VRRM as main diodes. |
| E1, E2 | NTC thermistor terminals | Two-wire Kelvin-sense interface for precise temperature monitoring without lead resistance error. |
| F1, F2 | Gate drive (G) and source (S) for MOSFET | Isolated gate loop with dedicated source return minimizes common-source inductance during switching. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated NTC thermistor | 5 kΩ @ 25 °C with B25/100 = 3433 K enables ±1.5 °C temperature accuracy over –40 to 150 °C range. |
| PressFIT contact technology | Eliminates solder joint fatigue failure; supports >1000 thermal cycles with <0.5 mΩ contact resistance drift. |
| Low stray inductance (10 nH) | Reduces switching voltage overshoot by >35 % vs. comparable wire-bond modules, easing snubber design. |
| Multi-diode integration (boost + bypass + polarity protection) | Reduces bill-of-materials count by 3 discrete components while maintaining independent thermal paths. |
| Rugged mounting clamps | Apply 20–50 N clamping force per clamp to ensure consistent thermal interface pressure across 10+ year field life. |
Applications
| Solar String Inverter Boost Stage | Photovoltaic DC Optimizer |
|---|---|
Use Scenario: High-efficiency DC-DC boost converter stepping up PV string voltage from 600–1000 V to 1200 V DC bus. IC Role / Device Role / Timing Role: CoolSiC™ MOSFET switches at 50–100 kHz; boost diode handles continuous 40 A forward current with 4.03 µC recovered charge. Use Value: 1.40 V forward voltage and 0.063 mJ reverse recovery energy minimize conduction and switching losses at partial-load MPPT operation. | Use Scenario: Module-level power electronics (MLPE) unit performing individual panel voltage regulation and rapid shutdown. IC Role / Device Role / Timing Role: Bypass diode provides fail-safe current path during panel shading or fault; inverse-polarity diode prevents damage from miswired strings. Use Value: Dual 50 A RMS-rated diodes enable 100 % redundancy without derating, supporting UL 1741 SA rapid shutdown compliance. |
| Industrial Solar Central Inverter | Energy Storage System (ESS) Bi-directional Converter |
Use Scenario: Multi-level NPC or T-type inverter stage handling 150 kW–1 MW DC input with forced-air cooling. IC Role / Device Role / Timing Role: MOSFET operates at 175 °C junction temperature with 34.7 mΩ RDS(on); body diode conducts freewheeling current with 3.8 V VSD at 175 °C. Use Value: 1.1 K/W thermal resistance allows 50 A continuous current at 65 °C heatsink temperature without active liquid cooling. | Use Scenario: Grid-tied battery inverter requiring bi-directional power flow between 1000 V DC battery bank and AC grid. IC Role / Device Role / Timing Role: MOSFET and body diode jointly enable synchronous rectification; NTC monitors junction temperature during regenerative braking events. Use Value: Integrated NTC with 5 kΩ/3433 K B-value enables real-time thermal derating to maintain <150 °C diode junction during 10 s overload pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V IGBT-based module; higher VCE(sat) (1.8 V) and slower switching (Eoff ≈ 2.1 mJ). | Lower cost but limited to <20 kHz switching; unsuitable for high-frequency MPPT optimization. | Select when thermal budget permits higher conduction loss and system EMI filtering is already oversized. |
| FS800R12A2E3_B11 | 1200 V SiC MOSFET module; no integrated NTC or bypass diode; RDS(on) = 12.5 mΩ but requires external temperature sensing. | Higher efficiency potential but increases BOM count and PCB area for discrete NTC and protection diodes. | Select when board space allows discrete component placement and thermal control architecture is centralized. |
Compared with FF600R12ME4 and FS800R12A2E3_B11, DF8MR12W1M1HFB67BPSA1 uniquely combines SiC efficiency, integrated thermal sensing, and multi-diode redundancy in a single PressFIT package-reducing system-level validation effort and improving long-term field reliability in solar applications.
Availability
DF8MR12W1M1HFB67BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, photovoltaic DC optimizers, industrial central inverters, and energy storage system bi-directional converters requiring stable component supply across multi-year production programs.
Supply support for DF8MR12W1M1HFB67BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to Infineon's EasyPACK™ family of press-fit power modules, designed specifically for high-reliability, high-power-density solar and energy storage systems requiring simplified assembly and extended thermal cycling endurance.
FAQ
What is the maximum continuous current rating for the MOSFET in DF8MR12W1M1HFB67BPSA1?
The MOSFET is rated for 50 A continuous drain current (IDN) at case temperature TH = 65 °C and junction temperature Tvj ≤ 175 °C. Under forced-air cooling with 65 °C heatsink, it sustains 50 A RMS; however, per datasheet note, current per connector pin is limited to 25 A rms to prevent terminal overheating.
Does DF8MR12W1M1HFB67BPSA1 require external gate resistors for reliable switching?
Yes - although the module integrates a 4.1 Ω internal gate resistor, external RG(on) = 3.3 Ω and RG(off) = 2 Ω are specified in the datasheet for turn-on/turn-off timing control. These values ensure optimal dv/dt and di/dt control while limiting EMI and voltage overshoot in 600 V bus applications.
How is the NTC thermistor electrically isolated from high-voltage terminals?
The NTC is galvanically isolated within the Al₂O₃ ceramic substrate and rated for 3.0 kV RMS isolation (1 min, 50 Hz). Its two terminals (E1/E2) are routed separately from power terminals and feature reinforced insulation per IEC 61140 Class 1 basic insulation, enabling safe connection to low-voltage controller ADC inputs.
Can DF8MR12W1M1HFB67BPSA1 be used in motor drive applications?
No - while rated for industrial use per IEC 60747/60749, its internal diode configuration (boost + bypass + polarity protection) and lack of complementary half-bridge pairing make it unsuitable for standard 3-phase inverter topologies. It is purpose-built for unidirectional high-voltage DC-DC conversion in solar and ESS systems.
DF8MR12W1M1HFB67BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- Technology:
- Silicon Carbide (SiC)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C:
- 45A
- Rds On (Max) @ Id, Vgs:
- 16.2mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs:
- 149nC @ 18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4400pF @ 800V
- Power - Max:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- AG-EASY1B
DF8MR12W1M1HFB67BPSA1 FAQ
1.How can I place an order for DF8MR12W1M1HFB67BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF8MR12W1M1HFB67BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF8MR12W1M1HFB67BPSA1 reliable?
The price and inventory of DF8MR12W1M1HFB67BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF8MR12W1M1HFB67BPSA1 is usually 5 days.
3.What payment methods are accepted for DF8MR12W1M1HFB67BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF8MR12W1M1HFB67BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF8MR12W1M1HFB67BPSA1?
DF8MR12W1M1HFB67BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF8MR12W1M1HFB67BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF8MR12W1M1HFB67BPSA1?
For technical support, including DF8MR12W1M1HFB67BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF8MR12W1M1HFB67BPSA1 requirements.
6.How does Aetrix verify that DF8MR12W1M1HFB67BPSA1 is sourced from the original manufacturer or authorized distributors?
All DF8MR12W1M1HFB67BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF8MR12W1M1HFB67BPSA1 meets industry standards.
7.What is the process for return or replacement of DF8MR12W1M1HFB67BPSA1?
All DF8MR12W1M1HFB67BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF8MR12W1M1HFB67BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF8MR12W1M1HFB67BPSA1 part is unused and in its original packaging.
Return procedure for DF8MR12W1M1HFB67BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF8MR12W1M1HFB67BPSA1 Tags
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